2SB1188 [TYSEMI]
Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A); 低VCE （SAT） 。 VCE （SAT） = -0.5V （典型值） （ IC / IB = -2A / -0.2A ）
| 型号： | 2SB1188 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) |
| 文件： | 总1页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
2SB1188
Features
Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
-40
-32
V
-5
V
-2
-3
A
Collector current
ICP *
PC
A
Collector power dissipation
Jumction temperature
Storage temperature
0.5
W
Tj
150
Tstg
-55 to +150
* PW=100ms
Electrical Characteristics Ta = 25
Parameter
Symbol
BVCBO
BVCEO IC = -1mA
BVEBO
ICBO
Testconditons
Min
-40
-32
-5
Typ
Max
Unit
V
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
IC = -50
A
V
V
IE = -50
A
VCB = -20V
VEB = -4V
-1
-1
ìA
ìA
V
Emitter cutoff current
IEBO
Collector-Emitter Saturation Voltage
DC current transfer ratio
VCE(sat) IC = -2A , IB = -0.2A
-0.5
-0.8
390
hFE
fT
VCE = -3V , IC = -0.5A
82
Transition frequency
VCE = -5V , IE = 0.5A , f = 30MHz
VCB = -10V , IE = 0, f = 1MHz
100
50
MHz
pF
Output Capacitance
Cob
hFE Classification
BC
Marking
Rank
P
Q
R
hFE
82 180
120 270
180 390
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