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2SB1188 [WEITRON]

Epitaxial Planar PNP Transistors; 外延平面PNP晶体管
2SB1188
型号： 2SB1188
厂家： WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述：

Epitaxial Planar PNP Transistors
外延平面PNP晶体管

晶体 晶体管
文件： 总5页 (文件大小：123K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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2SB1188  
Epitaxial Planar PNP Transistors  
SOT-89  
1
2
1. BASE  
2. COLLECTOR  
3
3. EMITTER  
%
(Ta=25 C)  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Limits  
Unit  
Collector-Base Voltage  
Vdc  
Vdc  
VCBO  
-40  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-32  
VCEO  
VEBO  
Vdc  
-5  
I
A(DC)  
C
-2  
Collector Current  
I
-3  
A (Pulse)*  
W
CP  
P
Collector Power Dissipation  
0.5  
C
%
C
T ,  
j
Tstg  
Junction Temperature,  
Storage Temperature  
-55 to +150  
150,  
* Single pulse Pw = 100ms  
%
(Ta=25 C unless otherwise noted )  
ELECTRICAL CHARACTERISTICS  
Parameter  
Min  
Typ  
Symbol  
Max  
Unit  
V
-
-
-
-40  
BV  
Collector-Base Breakdown Voltage (Ic=-50uA)  
Collector-Emitter Breakdown Voltage (Ic=-1mA)  
CBO  
V
-32  
-5  
-
-
-
BV  
CEO  
V
-
Emitter-Base Breakdown Voltage (I =-50uA)  
BV  
EBO  
ICBO  
IEBO  
E
-1  
-1  
uA  
uA  
-
-
Collector Cutoff Current (V =-20)  
CB  
-
Emitter Cutoff Current (V =-4V)  
EB  
WEITRON  
http://www.weitron.com.tw  
2SB1188  
%
(Countinued)  
(Ta=25 C unless otherwise noted )  
ELECTRICAL CHARACTERISTICS  
Parameter  
Min  
Typ  
Symbol  
Max  
Unit  
h
82  
-
-
-
-
DC Current Gain (V =-3V, Ic=-0.5A)  
390  
-
CE  
FE  
V
CE(sat)  
Collector-Emitter Saturation Voltage (Ic=-2A, I =-0.2A)  
V
-
80  
-
-0.8  
-
B
Transition Frequency (v =-5v, Ic=0.5A, f=30MHz)  
MHz  
pF  
f
CE  
T
65  
Cob  
Output Capacitancen (V =-10V, I =0A, f=1MHz)  
CB  
E
CLASSIFICATION OF h  
FE  
BCP  
P
Marking  
BCQ  
BCR  
R
Rank  
Q
Range  
120-270  
180-390  
82-180  
WEITRON  
http://www.weitron.com.tw  
2SB1188  
ELECTRICAL CHARACTERISTIC CURVES  
-0.5  
-0.4  
-0.3  
-0.2  
A
m
V
C E=-3V  
Ta=25 C  
5
.
2
-
A
m
5
2
.
2
-
Ta=100 C  
25 C  
40 C  
-1000  
-500  
-200  
-100  
-50  
-20  
-10  
-5  
-0.1  
0
-2  
-1  
IB=0A  
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2  
0
-0.4  
-0.8  
-1.2  
-1.6  
-2  
BAS E TO E MITTE R VOLTAG E : VBE (V)  
C OLLE C TOR TO E MITTE R VOLTAG E : VC E (V)  
FIG .1 G rounded emitter propagation  
characteristics  
FIG .2 G rounded emitter output  
characteristics  
V
C E =-3V  
Ta =25 C  
500  
200  
500  
Ta =100 C  
25 C  
25 C  
V
C E =6V  
3V  
1V  
200  
100  
50  
100  
50  
20  
20  
-5  
-10  
-20  
-50 -100 -200  
-500 -1000 -2000  
-5  
-10  
-20  
-50 -100 -200  
-500 -1000 -2000  
C OLLE C TOR C UR R E NT : IC (mA)  
C OLLE C TOR C UR R E NT : IC (mA)  
FIG .4 DC current gain vs.  
collector current  
FIG .3 DC current gain vs.  
collector current  
lC /lB =10  
-500  
Ta =25 C  
-500  
-200  
-200  
-100  
Ta =100 C  
25 C  
40 C  
-100  
-50  
I
C
/I  
B
=50  
-50  
-20  
20  
10  
-5  
-10 -20  
-50 -100 -200  
-500 -1000 -2000  
-5  
-10  
-20  
-50 -100 -200  
-500 -1000 -2000  
C OLLE C TOR C UR R E NT : IC (mA)  
C OLLE C TOR C UR R E NT : IC (mA)  
FIG .6 C ollector-emitter saturation  
voltage vs. collector current  
FIG .5 C ollector-emitter saturation  
voltage vs. collector current  
WEITRON  
http://www.weitron.com.tw  
2SB1188  
Ta =25 C  
C E =-5V  
Ta =25 C  
500  
V
-1  
I
C
/IB =10  
200  
100  
50  
-0.5  
-0.2  
-0.1  
-0.05  
--5  
-10  
-20  
-50 -100 -200  
-500 -1000 -2000  
5
10 20  
50 100 200 500 1000 2000  
(mA)  
C OLLE TOR C UR R E NT : IC (mA)  
E MITTE R C UR R E NT : I  
E
FIG .7 Base-emitter saturation voltage  
vs. collector current  
FIG .8 G ain bandwidth product vs.  
emitter current  
-5  
I
C Max. (pulse)  
Ta =25 C  
f =1MHz  
300  
200  
C ib  
P
-2  
-1  
P
W
I
E
=0A  
=0A  
W
=
=
1
1
I
C
0
0
0
m
s
100  
50  
m
s
*
*
-0.5  
C ob  
D
C
-0.2  
-0.1  
20  
10  
-0.05  
Ta =25 C  
*S ingle  
nonrepetitive  
pulse  
-0.02  
-0.01  
-0.5  
-1  
-2  
-5  
-10 -20 -30  
-0.1 -0.2 -0.5 -1  
-2  
-5 -10 -20 -50  
C OLLE C TOR TO BAS E VOLTAG E : VC B (V)  
E MITTE R TO BAS E VOLTAG E : VE B (V)  
C OLLE C TOR TO E MITTE R VOLTAG E :  
V
C E (V)  
FIG .9 C ollector output capacitance vs.  
collector-base voltage  
FIG .10 S afe operation area  
E mitter input capacitance vs.  
emitter-base voltage  
WEITRON  
http://www.weitron.com.tw  
2SB1188  
SOT-89 Outline Dimensions  
unit:mm  
SOT-89  
Min  
Dim  
A
B
C
D
Max  
E
1.600  
0.520  
0.560  
0.440  
4.600  
1.800  
2.600  
4.250  
1.400  
0.320  
0.360  
0.350  
4.400  
1.400  
2.300  
3.940  
A
G
H
J
C
E
G
H
J
D
B
K
K
L
1.500TYP  
L
3.100  
2.900  
WEITRON  
http://www.weitron.com.tw  

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