IXTT10N100D [IXYS]
Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN;
| 型号： | IXTT10N100D |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN |
| 文件： | 总5页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSX = 1000V
ID25 = 10A
RDS(on) ≤ 1.4Ω
High Voltage
MOSFETs
IXTH10N100D
IXTT10N100D
N-Channel, Depletion Mode
TO-268 (IXTT)
G
Symbol
VDSX
Test Conditions
Maximum Ratings
S
D (Tab)
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
VDGX
VGSX
VGSM
Continuous
Transient
±30
±40
V
V
TO-247 (IXTH)
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
10
20
A
A
G
PD
TC = 25°C
400
W
D
D (Tab)
S
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
G = Gate
S = Source
D
= Drain
Tab = Drain
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in.
Weight
TO-268
TO-247
4.0
6.0
g
g
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies meet UL94V-0
Flammability Classification
Symbol
Test Conditions
Characteristic Values
Advantages
(TJ = 25°C, Unless Otherwise Specified)
Min.
1000
-1.5
Typ.
Max.
BVDSX
VGS(off)
IGSX
VGS = -10V, ID = 250μA
VDS = 25V, ID = 250μA
VGS = ±30V, VDS = 0V
VDS = VDSX, VGS = -10V
V
V
• Easy to Mount
• Space Savings
• High Power Density
- 3.5
±100 nA
25 μA
IDSX(off)
Applications
TJ = 125°C
500 μA
• Level Shifting
• Triggers
RDS(on)
ID(on)
VGS = 10V, ID = 10A, Note 1
VGS = 0V, VDS = 25V, Note 1
1.4
Ω
• Solid State Relays
• Current Regulators
• Active Load
10
A
DS99529B(12/12)
© 2012 IXYS CORPORATION, All Rights Reserved
IXTT10N100D
IXTH10N100D
Symbol
Test Conditions
Characteristic Values
TO-268 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 0.5 • ID25, Note 1
VGS = -10V, VDS = 25V, f = 1MHz
3.0
5.4
S
Ciss
Coss
Crss
2500
pF
pF
pF
300
100
td(on)
tr
td(off)
tf
35
85
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25
RG = 4.7Ω (External)
110
75
Terminals: 1 - Gate
3 - Source
2,4 - Drain
Qg(on)
Qgs
130
27
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25
Qgd
58
RthJC
RthCS
0.31 °C/W
°C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VSD
trr
IF = ID25, VGS = -10V, Note 1
1.1
1.5
V
IF = 10A, -di/dt = 100A/μs
TO-247 Outline
850
ns
VR = 100V, VGS = -10V
∅ P
1
2
3
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
e
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTT10N100D
IXTH10N100D
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
20
18
16
14
12
10
8
10
9
8
7
6
5
4
3
2
1
0
VGS = 5V
VGS = 5V
4V
4V
3V
3V
2V
1V
2V
1V
6
4
2
0V
-1V
0V
- 1V
0
0
2
4
6
8
10
12
14
30
20
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 5A Value
vs. Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
10
9
8
7
6
5
4
3
2
1
0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
VGS = 5V
VGS = 10V
4V
3V
I D = 10A
2V
1V
I D = 5A
0V
-1V
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 5A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
10
8
VGS = 10V
TJ = 125ºC
6
4
TJ = 25ºC
2
0
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2012 IXYS CORPORATION, All Rights Reserved
IXTT10N100D
IXTH10N100D
Fig. 8. Transconductance
Fig. 7. Input Admittance
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
1.4
140
0
1
2
3
4
5
6
7
8
9
10
VGS - Volts
ID - Amperes
Fig. 10. Breakdown & Threshold Voltages
vs. Junction Temperature
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
30
25
20
15
10
5
1.5
VGS = -10V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGS(off) @ VDS = 25V
BVDSS @ VGS = -10V
TJ = 125ºC
TJ = 25ºC
0
-50
-25
0
25
50
75
100
125
150
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
VSD - Volts
TJ - Degrees Centigrade
Fig. 12. Capacitance
Fig. 11. Gate Charge
10
8
10,000
1,000
100
= 1 MHz
f
VDS = 500V
C
I
I
D = 5A
iss
G = 10mA
6
4
C
oss
2
0
C
-2
-4
-6
rss
10
0
20
40
60
80
100
120
0
5
10
15
20
25
30
35
40
QG - NanoCoulombs
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT10N100D
IXTH10N100D
Fig. 14. Forward-Bias Safe Operating Area
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 25ºC
@ TC = 75ºC
100
10
1
100
10
1
T
T
= 150ºC
= 75ºC
T
T
= 150ºC
J
J
= 25ºC
C
C
Single Pulse
Single Pulse
R
Limit
DS(on)
R
Limit
DS(on)
25µs
25µs
100µs
100µs
1ms
1ms
10ms
10ms
100ms
DC
100ms
DC
0.1
0.1
10
100
1,000
10,000
10
100
1,000
10,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_10N100D(7N)12-10-12-C
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