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IXTS13N60 [IXYS]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
IXTS13N60
型号: IXTS13N60
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

文件: 总8页 (文件大小:699K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IXTS15N40

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-210AC

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ETC

IXTS17N50

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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IXTS20P20

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-210AC

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ETC

IXTS30N10

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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LITTELFUSE

IXTS30N20

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-210AC

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IXTS30P10

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-210AC

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IXTT02N450HV

High Voltage Power MOSFETs

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IXTT100N25P

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IXTT10N100D

Power Field-Effect Transistor,

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IXTT10N100D

Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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IXTT10N100D2

Power Field-Effect Transistor,

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IXTT10N100D2

Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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IXTT10P50

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IXTT10P60

Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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IXTT10P60

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IXTT110N10L2

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IXTT110N10L2

Power Field-Effect Transistor, 110A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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IXTT110N10P

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IXTT11P50

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

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IXTT120N15P

Power Field-Effect Transistor, 120A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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LITTELFUSE