IXFN120N65X2 [IXYS]
Power Field-Effect Transistor;
| 型号： | IXFN120N65X2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总5页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
X2-Class HiPerFETTM
Power MOSFET
VDSS = 650V
ID25 = 108A
RDS(on) 24m
IXFN120N65X2
D
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G
S
miniBLOC, SOT-227
E153432
S
S
Symbol
Test Conditions
Maximum Ratings
G
VDSS
VDGR
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
650
650
V
V
VGSS
VGSM
Continuous
Transient
30
40
V
V
S
D
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
108
240
A
A
G = Gate
D = Drain
S = Source
IA
EAS
TC = 25C
TC = 25C
15
3.5
A
J
PD
TC = 25C
890
50
W
dv/dt
IS IDM, VDD VDSS, TJ 150°C
V/ns
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
C
C
C
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
VISOL
50/60 Hz, RMS
IISOL 1mA
t = 1 minute
t = 1 second
2500
3000
V~
V~
Md
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
Avalanche Rated
Weight
30
g
Low RDS(on)
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
650
V
V
Applications
3.5
5.0
Switch-Mode and Resonant-Mode
100 nA
Power Supplies
IDSS
50 A
5 mA
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
TJ = 125C
RDS(on)
VGS = 10V, ID = 60A, Note 1
24 m
© 2016 IXYS CORPORATION, All Rights Reserved
DS100690B(03/16)
IXFN120N65X2
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
46
76
S
RGi
0.74
Ciss
Coss
Crss
14
8700
5.5
nF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Co(er)
Co(tr)
455
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
1930
td(on)
tr
td(off)
tf
39
26
82
12
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 60A
(M4 screws (4x) supplied)
V
RG = 1(External)
Qg(on)
Qgs
240
87
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 60A
Qgd
65
RthJC
RthCS
0.14C/W
0.05C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
120
480
1.4
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS , VGS = 0V, Note 1
trr
220
2.3
ns
μC
A
IF = 60A, -di/dt = 100A/s
QRM
IRM
VR = 100V, VGS = 0V
21.0
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFN120N65X2
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
120
100
80
60
40
20
0
280
240
200
160
120
80
V
= 10V
GS
V
= 10V
GS
9V
8V
8V
7V
7V
6V
5V
6V
5V
40
0
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 60A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
120
100
80
60
40
20
0
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
GS
V
= 10V
GS
8V
7V
I
= 120A
D
6V
I
= 60A
D
5V
4V
0
1
2
3
4
5
6
7
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 60A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
V
= 10V
GS
T
J
= 125ºC
BV
DSS
T
J
= 25ºC
V
GS(th)
0
40
80
120
160
200
240
280
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ - Degrees Centigrade
IA - Amperes
© 2016 IXYS CORPORATION, All Rights Reserved
IXFN120N65X2
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
120
100
80
60
40
20
0
180
160
140
120
100
80
T
= 125ºC
J
25ºC
- 40ºC
60
40
20
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
-50
-25
0
25
50
75
100
125
150
VGS - Volts
TC - Degrees Centigrade
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
300
250
200
150
100
50
160
140
120
100
80
T
J
= - 40ºC
25ºC
125ºC
60
T
J
= 125ºC
40
T
J
= 25ºC
20
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
0
20
40
60
80
100
120
140
160
180
200
VSD - Volts
I D - Amperes
Fig. 12. Capacitance
Fig. 11. Gate Charge
100,000
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
V
= 325V
DS
I
I
= 60A
D
G
= 10mA
C
iss
C
oss
10
C
rss
= 1 MHz
f
1
1
10
100
1000
0
20
40
60
80
100 120 140 160 180 200 220 240
QG - NanoCoulombs
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN120N65X2
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
100
90
80
70
60
50
40
30
20
10
0
1000
100
10
R
Limit
)
DS(
on
25µs
100µs
1
1ms
T
J
= 150ºC
0.1
0.01
10ms
T
= 25ºC
C
Single Pulse
0
100
200
300
400
500
600
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.3
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2016 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_120N65X2(X9-S602) 12-14-15
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