IXFN140N30P [IXYS]
Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
| 型号： | IXFN140N30P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar Power MOSFET HiPerFET |
| 文件： | 总5页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM Power MOSFET
HiPerFETTM
VDSS = 300V
ID25 = 110A
RDS(on) ≤ 24mΩ
≤ 200ns
IXFN140N30P
N-Channel Enhancement Mode
Avalanche Rated
trr
Fast Intrinsic Diode
miniBLOC, SOT-227 B
E153432
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
300
300
V
V
S
G
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
±20
V
V
± 30
S
D
ID25
ILRMS
IDM
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
110
100
300
A
A
A
G = Gate
S = Source
D = Drain
IA
TC = 25°C
TC = 25°C
70
5
A
J
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
EAS
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
20
V/ns
W
700
Features
TJ
-55 ... +150
150
°C
°C
°C
• Fast intrinsic diode
• Avalanche Rated
• Low RDS(ON) and QG
TJM
Tstg
-55 ... +150
• Low package inductance
TL
1.6mm (0.062 in.) from case for 10s
300
°C
Advantages
VISOL
50/60 Hz, RMS
t = 1min
2500
3000
V~
V~
IISOL ≤ 1mA
t = 1s
• Easy to mount
• Space savings
• High power density
Md
Mounting torque
Terminal connection torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Applications
Weight
30
g
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20V, VDS = 0V
300
V
V
• DC choppers
• AC and DC motor control
• Uninterrupted power supplies
• High speed power switching
applications
3.0
5.0
±200
nA
IDSS
VDS = VDSS
VGS = 0V
25
1
μA
mA
TJ = 125°C
RDS(on)
VGS = 10V, ID = 70A, Note 1
20
24 mΩ
DS99571F(05/08)
© 2008 IXYS CORPORATION, All rights reserved
IXFN140N30P
Symbol
Test Conditions
Characteristic Values
SOT-227B Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 70A, Note 1
50
90
S
Ciss
Coss
Crss
td(on)
tr
14.8
1830
55
nF
pF
pF
ns
ns
ns
ns
VGS = 0V, VDS = 25V, f = 1MHz
30
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 70A
RG = 1Ω (External)
30
td(off)
tf
100
20
Qg(on)
Qgs
185
72
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 70A
Qgd
60
RthJC
RthCS
0.18 °C/W
°C/W
0.05
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
140
A
A
V
ISM
Repetitive, pulse width limited by TJM
IF = 70A, VGS = 0V, Note 1
560
1.3
VSD
trr
QRM
IRM
200
ns
μC
A
IF = 25A, -di/dt = 100A/μs
0.6
6.0
VR = 100V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFN140N30P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
140
120
100
80
280
240
200
160
120
80
VGS = 10V
8V
VGS = 10V
8V
7V
6V
5V
7V
6V
5V
60
40
20
40
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
12
14
16
18
20
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 70A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
140
120
100
80
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
VGS = 10V
VGS = 10V
8V
7V
I D = 140A
6V
5V
I D = 70A
60
40
20
0
0
1
2
3
4
5
6
7
8
-50
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 70A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
120
110
100
90
80
70
60
50
40
30
20
10
0
VGS = 10V
External Lead Current Limit
TJ = 125ºC
TJ = 25ºC
0
40
80
120
160
200
240
280
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXFN140N30P
Fig. 8. Transconductance
Fig. 7. Input Admittance
180
160
140
120
100
80
140
120
100
80
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
60
60
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1.4
40
0
20
40
60
80
100 120 140 160 180 200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
VDS = 150V
D = 70A
I G = 10mA
I
TJ = 125ºC
TJ = 25ºC
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
20
40
60
80
100 120 140 160 180 200
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1,000
100
10
RDS(on) Limit
C
iss
25µs
100µs
C
oss
1ms
10ms
DC
TJ = 150ºC
TC = 25ºC
Single Pulse
C
= 1 MHz
5
f
rss
1
10
10
100
1000
0
10
15
20
25
30
35
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
VDS - Volts
IXYS REF: F_140N30P(93)5-13-08-A
IXFN140N30P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_140N30P(93)5-13-08-B
相关型号：
©2020 ICPDF网 联系我们和版权申明