IXFN150N10 [IXYS]

HiPerFET Power MOSFETs; HiPerFET功率MOSFET


型号：	IXFN150N10
厂家：	IXYS CORPORATION
描述：	HiPerFET Power MOSFETs HiPerFET功率MOSFET
文件：	总4页 (文件大小：118K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFET^TM

Power MOSFETs

V_DSS

I_D25

R_DS(on)

IXFK100N10

IXFN150N10

100V 100 A 12 mW

100V 150 A 12 mW

t_rr£ 200 ns

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

TO-264 AA (IXFK)

Symbol

TestConditions

MaximumRatings

IXFK

IXFN

V_DSS

V_DGR

T_J= 25°C to 150°C

100

(TAB)

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

Continuous

Transient

±20

±30

±20

±30

miniBLOC, SOT-227 B (IXFN)

V_GSM

E153432

I_D25

I_D120

I_DM

T_C= 25°C

100

150

T_C= 120°C, limited by external leads

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

560

I_AR

E_AR

T_C= 25°C

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

G = Gate

S = Source

D = Drain

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

P_D

T_C= 25°C

500

520

T_J

-55 ... +150

150

-55 ... +150

300

°C

Features

T_JM

T_stg

●

Internationalstandardpackages

JEDECTO-264 AA,epoxymeet

●

UL94V-0, flammability classification

miniBLOCwithAluminiumnitride

T_L

1.6 mm (0.063 in) from case for 10 s

°C

●

V_ISOL

50/60 Hz, RMS

I_ISOL£ 1 mA

t = 1 min

t = 1 s

2500

3000

isolation

Low R_{DS (on)}HDMOS^TMprocess

●

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

Fast intrinsic Rectifier

M_d

Mountingtorque

Terminalconnectiontorque

0.9/6

1.5/13 Nm/lb.in.

●

Weight

●

Applications

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

●

DC-DC converters

Synchronousrectification

Battery chargers

Switched-modeandresonant-mode

●

min. typ. max.

●

V_DSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 8 mA

100

powersupplies

DC choppers

Temperatureandlightingcontrols

Low voltage relays

V_GH(th)

●

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

400 mA

●

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

●

Easy to mount

Space savings

High power density

R_DS(on)

V_GS= 10 V, I_D= 75 A

Pulse test, t £ 300 ms, duty cycle d £ 2 %

12 mW

●

IXYS reserves the right to change limits, test conditions, and dimensions.

92803G(8/96)

1 - 4

IXFK 100N10

IXFN 150N10

Symbol

g_fs

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

TO-264 AA Outline

V_DS= 10 V; I_D= 50 A, pulse test

C_iss

C_oss

C_rss

9000

3200

1800

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 75 A

R_G= 1 W (External),

100

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

4.82

2.54

2.00

5.13

2.89

2.10

.190

.100

.079

.202

.114

.083

Q_g(on)

Q_gs

360

1.12

2.39

2.90

1.42

2.69

3.09

.044

.094

.114

.056

.106

.122

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 75 A

Q_gd

180

0.53

0.83

.021

1.020

.780

.033

1.030

.786

25.91 26.16

19.81 19.96

5.46 BSC

R_thJC

R_thCK

TO-264 AA

0.25 K/W

K/W

.215 BSC

0.00

0.25

.000

.010

0.15

0.05

20.32 20.83

.800

.090

.820

.102

R_thJC

R_thCK

miniBLOC, SOT-227 B

0.24 K/W

K/W

2.29

2.59

3.17

3.66

.125

.144

6.07

8.38

6.27

8.69

.239

.330

.247

.342

3.81

1.78

4.32

2.29

.150

.070

.170

.090

6.04

1.57

6.30

1.83

.238

.062

.248

.072

Source-DrainDiode

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Symbol

I_S

TestConditions

miniBLOC, SOT-227 B

V_GS= 0 V

IXFK 100

IXFN 150

100

150

I_SM

Repetitive;

pulse width limited by T_JM

IXFK 100

IXFN 150

400

600

V_SD

I_F= 100 A, V_GS= 0 V,

1.75

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t_rr

150

0.6

200 ns

I_F= 25 A

-di/dt = 100 A/ms,

V_R= 50 V

Q_RM

I_RM

M4 screws (4x) supplied

Dim.

Millimeter

Min. Max.

31.50 31.88 1.240 1.255

Inches

Min.

Max.

7.80

8.20 0.307 0.323

4.09

4.29 0.161 0.169

4.09

4.29 0.161 0.169

14.91 15.11 0.587 0.595

30.12 30.30 1.186 1.193

38.00 38.23 1.496 1.505

11.68 12.22 0.460 0.481

8.92

9.60 0.351 0.378

0.76

0.84 0.030 0.033

12.60 12.85 0.496 0.506

25.15 25.42 0.990 1.001

1.98

2.13 0.078 0.084

4.95

5.97 0.195 0.235

26.54 26.90 1.045 1.059

3.94

4.72

4.42 0.155 0.174

4.85 0.186 0.191

24.59 25.07 0.968 0.987

-0.05 0.1 -0.002 0.004

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

2 - 4

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

IXFK 100N10

IXFN 150N10

Fig. 1 Output Characteristics

Fig. 2 Input Admittance

400

350

300

250

200

150

100

300

V_GS= 10V

T_J= 25°C

250

200

150

100

T_J= 125 C

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V_DS- Volts

V_GS- Volts

Fig. 3 R_DS(on)vs. Drain Current

Fig. 4 Temperature Dependence

of Drain to Source Resistance

1.4

2.00

1.75

1.50

1.25

1.00

0.75

0.50

T_J= 25°C

1.3

1.2

1.1

1.0

0.9

0.8

I_D= 75A

V_GS= 10V

V_GS= 15V

40 80 120 160 200 240 280 320

I_D- Amperes

-50 -25

25 50 75 100 125 150

T_J- Degrees C

Fig. 5 Drain Current vs.

Case Temperature

Fig. 6 Temperature Dependence of

Breakdown and Threshold Voltage

175

150

125

100

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

150N10

BV_DSS

100N10

V_GS(th)

-50 -25

25 50 75 100 125 150

T_C- Degrees C

-50 -25

25 50 75 100 125 150

T_J- Degrees C

3 - 4

IXFK 100N10

IXFN 150N10

Fig.7 Gate Charge Characteristic Curve

Fig.8 Capacitance Curves

12000

10000

8000

6000

4000

2000

f = 1MHz

V_DS= 25V

V_DS= 50V

I_D= 75A

_G= 1mA

C_iss

C_oss

C_rss

50 100 150 200 250 300 350 400

Gate Charge - nCoulombs

V_DS- Volts

Fig.9 Source Current vs. Source

to Drain Voltage

150

125

100

T_J= 125°C

T_J= 25°C

0.00 0.25 0.50

0.75 1.00

V_SD- Volt

1.25 1.50

Fig.10 Transient Thermal Impedance

0.5

0.1

0.01

0.001

0.01

0.1

Time - Seconds

4 - 4

IXFN150N10 [IXYS]

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