IXFN150N15 [IXYS]
HiPerFET Power MOSFET; HiPerFET功率MOSFET
| 型号： | IXFN150N15 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFET |
| 文件： | 总2页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFET
IXFN 150N15
VDSS = 150 V
ID25 = 150 A
RDS(on) = 12.5 mW
Single MOSFET Die
Preliminary data sheet
Symbol Test Conditions
trr £ 250 ns
miniBLOC, SOT-227 B (IXFN)
E153432
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MW
150
150
V
V
S
G
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IL(RMS)
IDM
TC = 25°C
150
100
600
150
A
A
A
A
S
Terminal(currentlimit)
TC = 25°C; Note 1
TC = 25°C
D
IAR
G = Gate
S = Source
D = Drain
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Features
PD
TC = 25°C
600
W
· Internationalstandardpackage
· Encapsulating epoxy meets
UL94V-0,flammabilityclassification
· miniBLOC withAluminiumnitride
isolation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
· Fast intrinsic Rectifier
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Md
Mountingtorque
Terminalconnectiontorque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Applications
· DC-DC converters
· Synchronousrectification
· Battery chargers
· Switched-modeandresonant-mode
powersupplies
· DC choppers
· Temperatureandlightingcontrols
· Low voltage relays
Symbol
TestConditions
CharacteristicValues
Typ. Max.
(TJ = 25°C, unless otherwise specified)
Min.
150
2
VDSS
VGS(th)
IGSS
VGS= 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS= ±20V, VGS = 0V
V
4
V
±100
nA
IDSS
VDS= VDSS
VGS= 0 V
TJ = 25°C
TJ = 125°C
100
2
mA
mA
Advantages
· Easy to mount
· Space savings
· High power density
RDS(on) VGS= 10V, ID = 0.5 • ID25
12.5
mW
Note 2
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98653(9/99)
1 - 2
IXFN 150N10
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
miniBLOC, SOT-227 B
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10 V; ID = 60A, Note 2
50
75
S
Ciss
Coss
Crss
9100
2600
1200
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
50
60
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
M4 screws (4x) supplied
RG = 1 W (External),
110
45
Dim.
Millimeter
Min. Max.
31.50 31.88 1.240 1.255
Inches
Min.
Max.
A
B
7.80
8.20 0.307 0.323
Qg(on)
Qgs
360
65
nC
nC
nC
C
D
4.09
4.09
4.29 0.161 0.169
4.29 0.161 0.169
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
E
F
4.09
4.29 0.161 0.169
Qgd
190
14.91 15.11 0.587 0.595
G
H
30.12 30.30 1.186 1.193
38.00 38.23 1.496 1.505
RthJC
RthCK
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.21
K/W
K/W
J
K
11.68 12.22 0.460 0.481
0.05
8.92
9.60 0.351 0.378
L
0.76
0.84 0.030 0.033
M
12.60 12.85 0.496 0.506
25.15 25.42 0.990 1.001
N
O
1.98
2.13 0.078 0.084
P
4.95
5.97 0.195 0.235
Q
26.54 26.90 1.045 1.059
R
S
3.94
4.72
4.42 0.155 0.174
4.85 0.186 0.191
Source-DrainDiode
T
U
24.59 25.07 0.968 0.987
-0.05 0.1 -0.002 0.004
(TJ = 25°C, unless otherwise specified)
CharacteristicValues
Min. Typ. Max.
Symbol
TestConditions
IS
VGS = 0
150
600
A
ISM
Repetitive;
A
pulse width limited by TJM
VSD
IF = 100 A, VGS = 0 V,
1.5
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
QRM
IRM
250
ns
mC
A
IF = 50 A, -di/dt = 100 A/ms, VR = 50 V
1.1
13
Notes:
1.Pulse width limited by TJM.
2.Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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