IXFN130N30 [IXYS]
HiPerFET Power MOSFETs Single Die MOSFET; HiPerFET功率MOSFET的单芯片MOSFET
| 型号： | IXFN130N30 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Single Die MOSFET |
| 文件： | 总4页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFN 130N30
VDSS = 300 V
ID25 = 130 A
RDS(on) = 22 mΩ
D
trr
< 250 ns
N-ChannelEnhancementMode
G
S
AvalancheRated, Highdv/dt, Lowtrr
S
miniBLOC,SOT-227B(IXFN)
E153432
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
300
300
V
V
S
TJ = 25°C to 150°C; RGS = 1 MΩ
G
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
ID25
TC = 25°C
130
100
A
A
D
IL(RMS)
Terminal (current limit)
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
520
100
A
G = Gate
D = Drain
A
S = Source
EAR
TC = 25°C
TC = 25°C
85
4
mJ
J
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
EAS
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
Features
PD
TC = 25°C
700
W
• Internationalstandardpackages
• miniBLOC, withAluminiumnitride
isolation
• Low RDS (on) HDMOSTM process
• Ruggedpolysilicongatecellstructure
• UnclampedInductiveSwitching(UIS)
rated
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
VISOL
50/60 Hz, RMS
ISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
I
Md
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
• Lowpackageinductance
• FastintrinsicRectifier
Weight
30
g
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
• DC-DC converters
• Batterychargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• Temperatureandlightingcontrols
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
300
2
V
V
VGH(th)
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
100 µA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
2
mA
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
22 mΩ
• Easy to mount
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS98531F(01/03)
IXFN 130N30
Symbol
gfs
TestConditions
Characteristic Values
miniBLOC, SOT-227 B
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
VDS = 10 V; ID = 60A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
70
92
S
Ciss
Coss
Crss
14500
2650
610
pF
pF
pF
td(on)
tr
td(off)
tf
45
75
130
31
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 Ω (External),
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
QG(on)
QGS
QGD
380
95
180
nC
nC
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
RthJC
RthCK
0.18 K/W
K/W
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
0.05
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
130
520
1.5
A
A
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = 100A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 30A, -di/dt = 100 A/µs, VR = 100 V
250 ns
QRM
0.8
8
µC
IRM
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
IXFN 130N30
200
160
120
80
250
200
150
100
50
VGS=10V
V
GS=10V
TJ=25OC
TJ=125OC
9V
8V
7V
9V
8V
7V
6V
5V
6V
5V
40
0
0
0
4
8
12
16
20
0
4
8
12
16
VDS - Volts
VDS - Volts
Figure 1. Output Characteristics at 25OC
Figure 2. Output Characteristics at 125OC
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
VGS = 10V
VGS=10V
TJ = 125OC
ID=120A
ID=60A
TJ = 25OC
0
50
100
150
200
250
25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Figure3. RDS(on) normalized to 0.5 ID25 value
vs. ID
Figure 4. RDS(on) normalized to 0.5 ID25
valuevs.TJ
150
125
100
75
120
90
60
30
0
TJ = 125oC
50
TJ = 25oC
25
0
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
TC - Degrees C
VGS - Volts
Figure5.DrainCurrentvs.CaseTemperature
Figure6. AdmittanceCurves
© 2003 IXYS All rights reserved
IXFN 130N30
12
10
8
18000
15000
12000
9000
6000
3000
0
CISS
VDS=150V
ID=65A
IG=10mA
f = 100KHz
6
4
COSS
2
CRSS
0
0
100
200
Gate Charge - nC
Figure7. GateCharge
300
400
500
0
5
10 15 20 25 30 35 40
VDS - Volts
Figure8.CapacitanceCurves
200
160
120
80
TJ = 125OC
TJ = 25OC
40
0
0.3
0.6
0.9
1.2
1.5
1.8
VSD - Volts
Figure9. ForwardVoltageDropofthe
IntrinsicDiode
0.100
0.010
0.001
Single Pulse
10-4
10-3
10-2
Pulse Width - Seconds
Figure10.TransientThermalResistance
10-1
100
101
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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