IXFN140N20P [IXYS]
PolarHT HiPerFET Power MOSFET; PolarHT HiPerFET功率MOSFET
| 型号： | IXFN140N20P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHT HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHTTM HiPerFET
Power MOSFET
VDSS = 200 V
ID25 = 115 A
RDS(on) ≤ 18 mΩ
IXFN 140N20P
N-Channel Enhancement Mode
Fast Intrinsic Diode
trr
≤ 150 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
200
200
V
miniBLOC, SOT-227 B (IXFN)
E153432
TJ = 25°C to 175°C; RGS = 1 MΩ
V
VGS
Continuous
Transient
20
30
V
V
S
VGSM
G
ID25
TC = 25°C
115
100
280
A
A
A
ID(RMS)
IDM
External lead current limit
TC = 25°C, pulse width limited by TJM
S
IAR
TC = 25°C
60
A
D
EAR
EAS
TC = 25°C
TC = 25°C
100
4
mJ
J
G = Gate
S = Source
D = Drain
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
Either source tab S can be used forsource
current or Kelvin gate return.
TC = 25°C
680
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
Features
TL
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
300
°C
z International standard package
z Unclamped Inductive Switching (UIS)
rated
VISOL
2500
V~
Md
Terminal torque
Mounting torque
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
z Low package inductance
- easy to drive and to protect
z
Weight
30
g
Fast intrinsic diode
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
Easy to mount
Space savings
High power density
z
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
200
V
V
z
2.5
5.0
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
μA
μA
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 70 A
VGS = 15 V, ID = 140A
18 mΩ
mΩ
14
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99245E(03/06)
© 2006 IXYS All rights reserved
IXFN 140N20P
Symbol
gfs
Test Conditions
Characteristic Values
SOT-227B miniBLOC
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 70 A
50
84
S
Ciss
Coss
Crss
7500
1630
280
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
30
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 70 A
RG = 3.3 Ω (External)
150
90
Qg(on)
Qgs
240
50
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 70 A
Qgd
110
RthJC
RthCS
0.22K/W
K/W
0.05
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
140
A
A
V
ISM
280
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr
IF = 25 A
200 ns
QRM
IRM
-di/dt = 100 A/μs
VR = 100 V
0.6
6
μC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFN 140N20P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25
º
C
@ 25 C
º
140
120
100
80
300
270
240
210
180
150
120
90
VGS = 10V
V
= 10V
GS
9V
8V
9V
8V
7V
60
7V
6V
40
6V
5V
60
20
30
0
0
0
0
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
6
7
8
9
10
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 150
Fig. 4. RDS(on Norm alized to ID = 70A
)
º
C
Value vs. Junction Tem perature
140
120
100
80
VGS = 10V
3
2.5
2
VGS = 10V
9V
8V
ID = 140A
7V
ID = 70A
60
1.5
1
6V
5V
40
20
0
0.5
1
2
3
4
5
6
-50 -25
0
25
50
75 100 125 150 175
VD S - Volts
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
Fig. 5. RDS(on) Norm alized to
ID = 70A Value vs. Drain Current
80
70
60
50
40
30
20
10
0
4
3.5
3
= 175ºC
TJ
2.5
2
VGS = 10V
V
= 15V
GS
1.5
1
º
TJ = 25 C
0.5
-50 -25
0
25
50
75
100 125 150 175
50
100
150
200
250
300
TC - Degrees Centigrade
I D - Amperes
© 2006 IXYS All rights reserved
IXFN 140N20P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
225
200
175
150
125
100
75
120
110
100
90
80
70
60
50
40
30
20
10
0
= -40ºC
25ºC
150ºC
TJ
= 150ºC
25ºC
-40ºC
TJ
50
25
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
40
80
120
160
200
240
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 100V
ID = 70A
I
G = 10mA
= 150ºC
TJ
= 25ºC
TJ
0
0
25 50 75 100 125 150 175 200 225 250
0.4
0.6
0.8
1
1.2
1.4
VS D - Volts
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
100,000
10,000
1,000
100
1000
100
10
f = 1MHz
25µs
RDS(on) Limit
C
iss
100µs
1ms
C
oss
10ms
C
rss
DC
= 175ºC
TJ
= 25ºC
TC
1
0
5
10
15
20
25
30
35
40
1
10
100
1000
VDS - Volts
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 140N20P
Fig. 13. Maxim um Transient Therm al Resistance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_140N20P (88) 01-23-06-B.xls
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