IXFN132N50P3 [IXYS]
Polar3 HiPerFET Power MOSFET; Polar3 HiPerFET功率MOSFET
| 型号： | IXFN132N50P3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar3 HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
Polar3TM HiPerFETTM
Power MOSFET
VDSS = 500V
ID25 = 112A
RDS(on) ≤ 39mΩ
IXFN132N50P3
trr
≤ 250ns
N-Channel Enhancement Mode
Avalanche Rated
miniBLOC
E153432
Fast Intrinsic Rectifier
S
G
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
500
500
V
V
S
VDGR
D
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
G = Gate
S = Source
D = Drain
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
112
330
A
A
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
IA
EAS
TC = 25°C
TC = 25°C
66
3
A
J
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
35
V/ns
W
1500
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z
International Standard Package
miniBLOC with Aluminum Nitride
z
VISOL
50/60 Hz, RMS, t = 1minute
2500
3000
V~
V~
Isolation
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
z
IISOL ≤ 1mA,
t = 1s
z
Md
Mounting Torque for Base Plate
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
z
z
Low RDS(on) and QG
Weight
30
g
Advantages
z
Easy to Mount
Space Savings
z
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
500
3.0
Typ.
Max.
z DC-DC Converters
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
5.0
±200 nA
z Uninterrupted Power Supplies
z AC Motor Drives
IDSS
50 μA
6 mA
z High Speed Power Switching
Applications
TJ = 125°C
RDS(on)
VGS = 10V, ID = 66A, Note 1
39 mΩ
DS100316(03/11)
© 2011 IXYS CORPORATION, All Rights Reserved
IXFN132N50P3
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 66A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
68
115
S
Ciss
Coss
Crss
18.6
1750
5.0
nF
pF
pF
RGi
1.0
44
Ω
td(on)
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 66A
RG = 1Ω (External)
tr
9
ns
ns
td(off)
72
(M4 screws (4x) supplied)
tf
8
ns
Qg(on)
Qgs
250
90
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 66A
Qgd
52
RthJC
RthCS
0.083 °C/W
°C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
132
530
1.5
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
trr
QRM
IRM
250 ns
IF = 66A, -di/dt = 100A/μs
1.9
16.4
μC
A
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFN132N50P3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
140
120
100
80
250
200
150
100
50
VGS = 10V
8V
VGS = 10V
8V
7V
7V
6V
60
40
6V
5V
20
5V
0
0
0
5
10
15
20
25
0
0
0
1
2
3
4
5
6
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 66A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
140
120
100
80
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
VGS = 10V
VGS = 10V
8V
7V
I D = 132A
6V
I D = 66A
60
40
5V
4V
20
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 66A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.0
2.6
2.2
1.8
1.4
1.0
0.6
120
100
80
60
40
20
0
VGS = 10V
TJ = 125ºC
TJ = 25ºC
50
100
150
200
250
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFN132N50P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
180
160
140
120
100
80
200
180
160
140
120
100
80
TJ = - 40ºC
TJ = 125ºC
25ºC
25ºC
- 40ºC
125ºC
60
60
40
40
20
20
0
0
0
20
40
60
80
100
120
140
160
180
200
220
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
1.4
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
350
10
9
8
7
6
5
4
3
2
1
0
VDS = 250V
I D = 66A
300
250
200
150
100
50
I G = 10mA
TJ = 125ºC
TJ = 25ºC
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
50
100
150
200
250
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1000
C
iss
RDS(on) Limit
100
10
1
100µs
C
oss
TJ = 150ºC
C = 25ºC
Single Pulse
10
C
rss
T
1ms
= 1 MHz
5
f
1
0
10
15
20
25
30
35
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN132N50P3
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.2
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_132N50P3(K9)03-17-11
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