IXFN100N50Q3 [IXYS]
HiperFET Power MOSFET Q3-Class; HiperFET功率MOSFET Q3级
| 型号： | IXFN100N50Q3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiperFET Power MOSFET Q3-Class |
| 文件： | 总5页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
HiperFETTM
Power MOSFET
Q3-Class
VDSS = 500V
ID25 = 82A
RDS(on) ≤ 49mΩ
IXFN100N50Q3
trr
≤ 250ns
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
miniBLOC
E153432
S
Symbol
VDSS
Test Conditions
Maximum Ratings
G
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
500
500
V
V
VDGR
S
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
D
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
82
A
A
G = Gate
S = Source
D = Drain
300
IA
TC = 25°C
TC = 25°C
100
5
A
J
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
EAS
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
50
V/ns
W
960
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
International Standard Package
Low Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
z
z
VISOL
50/60 Hz, RMS, t = 1minute
2500
3000
V~
V~
IISOL ≤ 1mA,
t = 1s
Isolation
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
z
Md
Mounting Torque for Base Plate
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
z
z
Weight
30
g
Advantages
z
High Power Density
Easy to Mount
Space Savings
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
500
3.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
z
6.5
z
±200 nA
Power Supplies
DC Choppers
Temperature and Lighting Controls
z
IDSS
50 μA
2.5 mA
z
TJ = 125°C
RDS(on)
VGS = 10V, ID = 50A, Note 1
49 mΩ
DS100308(03/11)
© 2011 IXYS CORPORATION, All Rights Reserved
IXFN100N50Q3
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 50A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
40
65
S
Ciss
Coss
Crss
13.8
1690
177
nF
pF
pF
RGi
0.12
40
Ω
td(on)
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 0.5Ω (External)
tr
20
50
ns
ns
td(off)
(M4 screws (4x) supplied)
tf
15
ns
Qg(on)
Qgs
255
110
115
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
Qgd
RthJC
RthCS
0.13 °C/W
°C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
100
400
1.5
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
250 ns
IF = 50A, -di/dt = 200A/μs
3.5
30.0
μC
A
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFN100N50Q3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
90
80
70
60
50
40
30
20
10
0
VGS = 10V
VGS = 10V
9V
200
160
120
80
9V
8V
8V
7V
6V
40
7V
6V
0
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 50A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
100
90
80
70
60
50
40
30
20
10
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
VGS = 10V
VGS = 10V
8V
7V
I D = 100A
I D = 50A
6V
5V
0
1
2
3
4
5
6
7
8
9
10
11
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 50A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
90
80
70
60
50
40
30
20
10
0
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
TJ = 125ºC
TJ = 25ºC
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
180
200
220
ID - Amperes
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFN100N50Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
110
100
90
80
70
60
50
40
30
20
10
0
140
120
100
80
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
60
- 40ºC
40
20
0
0
20
40
60
80
100
120
140
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
16
14
12
10
8
300
250
200
150
100
50
VDS = 250V
I D = 50A
I G = 10mA
6
TJ = 125ºC
TJ = 25ºC
4
2
0
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
VSD - Volts
0
50
100
150
200
250
300
350
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
100
10
100000
10000
1000
= 1 MHz
f
RDS(on) Limit
250µs
C
iss
C
oss
1ms
1
TJ = 150ºC
TC = 25ºC
C
rss
Single Pulse
100
0.1
0
5
10
15
20
25
30
35
40
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN100N50Q3
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_100N50Q3(Q9)02-24-11
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