IXFN102N30P [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFN102N30P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
VDSS = 300 V
ID25 = 86 A
RDS(on) ≤ 33 mΩ
trr ≤ 200 ns
IXFN 102N30P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
300
300
V
V
S
G
VGS
VGSM
Continuous
Transient
20
30
V
V
ID25
IL
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
86
100
250
A
A
A
S
D
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
88
60
5
A
mJ
J
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
TC = 25°C
570
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C Features
z International standard package
z Encapsulating epoxy meets
UL94V-0, flammability classification
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
VISOL
50/60 Hz, RMS
t = 1 min
2500
3000
V~
IISOL ≤ 1 mA
t = 1 s
V~ z miniBLOC with Aluminium nitride
isolation
z Fast recovery diode
Md
Mounting torque
Terminal connection torque
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
z Unclamped Inductive Switching (UIS)
rated
Weight
30
g
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Advantages
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
300
V
V
z
Easy to mount
Space savings
High power density
z
VDS = VGS, ID = 4 mA
2.5
5.0
z
VGS
=
20 VDC, VDS = 0
200
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
μA
μA
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
33 mΩ
DS99248E(06/06)
© 2006 IXYS All rights reserved
IXFN102N30P
Symbol
gfs
Test Conditions
Characteristic Values
SOT-227B Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
45
57
S
Ciss
Coss
Crss
7500
1150
230
pF
pF
pF
td(on)
tr
td(off)
tf
30
28
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 Ω (External)
130
30
Qg(on)
Qgs
224
50
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
110
RthJC
RthCS
0.22 °C/W
°C/W
0.05
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
102
A
A
V
ISM
Repetitive
250
1.5
VSD
IF = IS, VGS = 0 V, Note 1
trr
IF = 25 A, -di/dt = 100 A/μs
200 ns
QRM
IRM
VR = 100 V, VGS = 0 V
0.8
6
μC
A
Notes:
1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25
@ 25 C
º
º
C
110
100
90
80
70
60
50
40
30
20
10
0
250
225
200
175
150
125
100
75
VGS = 10V
V
= 10V
9V
GS
9V
8V
8V
7V
7V
6V
5V
6V
5V
50
25
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
2
4
6
8
10 12 14 16 18 20
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
Fig. 4. RDS(on Norm alized to ID = 51A
)
@ 125 C
º
Value vs. Junction Tem perature
110
100
90
80
70
60
50
40
30
20
10
0
2.8
2.6
2.4
2.2
2
VGS = 10V
VGS = 10V
9V
8V
7V
6V
1.8
1.6
1.4
1.2
1
ID = 102A
ID = 51A
0.8
0.6
0.4
5V
6
1
2
3
4
5
7
8
9
-50
-25
0
25
50
75
100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
ID = 51A Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Tem pe rature
2.6
2.4
2.2
2
90
80
70
60
50
40
30
20
10
0
VGS = 10V
TJ = 125ºC
1.8
1.6
1.4
1.2
1
TJ = 25ºC
0.8
-50
-25
0
25
50
75
100
125
150
25 50 75 100 125 150 175 200 225 250
ID - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXFN102N30P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
150
125
100
75
100
90
80
70
60
50
40
30
20
10
0
TJ = -40ºC
25ºC
125ºC
50
TJ = 125ºC
25ºC
-40ºC
25
0
3.5
4
4.5
5
5.5
6
6.5
7
7.5
0
25
50
75
100 125 150 175 200
VGS - Volts
ID - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
VDS = 150V
I
I
D = 51A
G = 10mA
TJ = 125ºC
TJ = 25ºC
0
0
25
50
75 100 125 150 175 200 225
0.4
0.6
0.8
1
1.2
1.4
VSD - Volts
QG - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
100
10
RDS(on) Limit
C
iss
25µs
100µs
1ms
C
C
oss
rss
10ms
DC
f = 1MHz
TJ = 150ºC
TC = 25ºC
1
0
5
10
15
20
25
30
35
40
10
100
1000
VDS - Volts
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 13. Maxim um Transient Therm al Resistance
1.000
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
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