首页 |元器件品牌

IXFN106N120 [IXYS]

Insulated Gate Bipolar Transistor,;
IXFN106N120
型号： IXFN106N120
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Insulated Gate Bipolar Transistor,

栅
文件： 总4页 (文件大小：112K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
HiPerFETTM  
Power MOSFETs  
VDSS  
ID25  
RDS(on)  
IXFK 90 N 20 200V  
90 A  
23 mW  
IXFN 100 N 20 200V 100 A 23 mW  
IXFN 106 N 20 200V 106 A 20 mW  
trr £ 200 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
TO-264 AA  
(IX
Symbol  
TestConditions  
MaximumRatings  
IXFK  
IXFN  
IXFN  
90N20 100N20 106N20  
VDSS  
VDGR  
TJ = 25°C to 150°C  
200  
200  
200 V  
(TAB)  
G
TJ = 25°C to 150°C; RGS = 1 MW  
200  
200  
200 V  
D
S
VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
20 V  
20 V  
miniBLOC, SOT-227 B (IXFN)  
VGSM  
E153432  
S
ID25  
ID80  
IDM  
IAR  
TC = 25°C, Chip capability  
TC = 80°C, limited by external leads  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
90   
76  
100  
-
106 A  
A
G
D
360  
50  
400  
50  
424 A  
A
G
S
EAR  
TC = 25°C  
30  
5
30  
5
30 mJ  
5 V/ns  
S
D
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
500  
520  
W
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
l
Internationalstandardpackages  
JEDECTO-264 AA,epoxymeet  
●
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
-
°C  
UL94V-0,flammabilityclassification  
miniBLOCwithAluminiumnitride  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
-
-
2500  
3000  
V~  
V~  
●
isolation  
Low RDS (on) HDMOSTM process  
●
Md  
Mountingtorque  
Terminalconnectiontorque  
0.9/6  
-
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
●
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
Fast intrinsic Rectifier  
●
Weight  
10  
30  
g
●
●
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Applications  
●
DC-DC converters  
Synchronousrectification  
Battery chargers  
min. typ. max.  
●
●
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 8 mA  
200  
2
V
V
●
Switched-modeandresonant-mode  
VGH(th)  
4
powersupplies  
DC choppers  
Temperatureandlightingcontrols  
Low voltage relays  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
400 mA  
●
●
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
●
2
mA  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms,  
duty cycle d £ 2 %  
Advantages  
IXFK90N20  
IXFN100N20  
IXFN106N20  
0.023  
0.023  
0.020  
W
W
W
●
Easy to mount  
Space savings  
●
●
High power density  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
92804H(7/97)  
1 - 4  
IXFK100N20  
IXFN90N20 IXFN106N20  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-264 AA Outline  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
60  
S
Ciss  
Coss  
Crss  
9000  
1600  
590  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
80  
75  
30  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 W (External),  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qg(on)  
Qgs  
380  
70  
nC  
nC  
nC  
b
b1  
b2  
c
D
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
190  
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
25.91 26.16  
E
e
J
19.81 19.96  
5.46 BSC  
RthJC  
RthCK  
TO-264 AA  
TO-264 AA  
0.25 K/W  
K/W  
.215 BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
0.15  
0.05  
K
L
L1  
P
Q
20.32 20.83  
.800  
.090  
.820  
.102  
RthJC  
RthCK  
miniBLOC, SOT-227 B  
miniBLOC, SOT-227 B  
0.24 K/W  
K/W  
2.29  
2.59  
3.17  
3.66  
.125  
.144  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Q1  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
IS  
TestConditions  
VGS = 0 V  
IXFK90N20  
IXFN100N20  
IXFN106N20  
90  
100  
106  
A
A
A
miniBLOC, SOT-227 B  
IXFK90N20  
IXFN100N20  
IXFN106N20  
ISM  
Repetitive;  
pulse width limited by TJM  
360  
424  
A
A
VSD  
IF = 100 A, VGS = 0 V,  
1.5  
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
trr  
200 ns  
QRM  
IRM  
IF = 50 A, -di/dt = 100 A/ms, VR = 100 V  
3
38  
mC  
A
M4 screws (4x) supplied  
Dim.  
Millimeter  
Min. Max.  
31.50 31.88 1.240 1.255  
Inches  
Min.  
Max.  
A
B
7.80  
8.20 0.307 0.323  
C
D
4.09  
4.09  
4.29 0.161 0.169  
4.29 0.161 0.169  
E
F
4.09  
4.29 0.161 0.169  
14.91 15.11 0.587 0.595  
G
H
30.12 30.30 1.186 1.193  
38.00 38.23 1.496 1.505  
J
11.68 12.22 0.460 0.481  
K
8.92  
9.60 0.351 0.378  
L
0.76  
0.84 0.030 0.033  
M
12.60 12.85 0.496 0.506  
25.15 25.42 0.990 1.001  
N
O
1.98  
2.13 0.078 0.084  
P
4.95  
5.97 0.195 0.235  
Q
26.54 26.90 1.045 1.059  
R
S
3.94  
4.72  
4.42 0.155 0.174  
4.85 0.186 0.191  
T
U
24.59 25.07 0.968 0.987  
-0.05 0.1 -0.002 0.004  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXFK100N20  
IXFN90N20 IXFN106N20  
Fig. 1 Output Characteristics  
Fig. 2 Input Admittance  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
9V  
8V  
7V  
VGS = 10V  
TJ = 25°C  
TJ = 25°C  
6V  
5V  
60  
60  
40  
40  
20  
20  
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VGS - Volts  
Fig. 3 RDS(on) vs. Drain Current  
Fig. 4 Temperature Dependence  
of Drain to Source Resistance  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
TJ = 25°C  
ID = 53A  
VGS = 10V  
VGS = 15V  
0
50  
100 150 200 250 300 350  
ID - Amperes  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
Fig. 5 Drain Current vs.  
Case Temperature  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
120  
100  
80  
60  
40  
20  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGS(th)  
106N20  
BVDSS  
90N20  
-50 -25  
0
25 50 75 100 125 150  
TC - Degrees C  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
© 2000 IXYS All rights reserved  
3 - 4  
IXFK100N20  
IXFN90N20 IXFN106N20  
Fig.7 Gate Charge Characteristic Curve  
Fig.8 Capacitance Curves  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
Ciss  
14  
12  
10  
8
VDS = 100V  
ID = 50A  
IG = 10mA  
f = 1MHz  
VDS = 25V  
6
Coss  
Crss  
4
2
0
0
50 100 150 200 250 300 350 400  
Gate Charge - nCoulombs  
0
5
10  
15  
20  
25  
VDS - Volts  
Fig.9 Source Current vs. Source  
to Drain Voltage  
100  
80  
60  
40  
20  
0
TJ = 125°C  
TJ = 25°C  
0.4  
0.6  
0.8  
1.0  
1.2  
VSD - Volts  
Fig.10 Transient Thermal Impedance  
0.5  
0.1  
0.01  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
© 2000 IXYS All rights reserved  
4 - 4  

相关型号：

IXFN106N20

 HiPerFET Power MOSFETs
IXYS

IXFN110N20

 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 110A I(D)
ETC

IXFN110N60P3

 Polar3 HiPerFET Power MOSFET
IXYS

IXFN110N85X

 Power Field-Effect Transistor
IXYS

IXFN120N20

 HiPer FET Power MOSFETs
IXYS

IXFN120N65X2

 Power Field-Effect Transistor,
LITTELFUSE

IXFN120N65X2

 Power Field-Effect Transistor
IXYS

IXFN130N30

 HiPerFET Power MOSFETs Single Die MOSFET
IXYS

IXFN132N50P3

 Polar3 HiPerFET Power MOSFET
IXYS

IXFN140N20P

 PolarHT HiPerFET Power MOSFET
IXYS

IXFN140N25T

 GigaMOS HiperFET Power MOSFET
IXYS

IXFN140N30P

 Polar Power MOSFET HiPerFET
IXYS
©2020 ICPDF网 联系我们和版权申明