DSEP29-12B [IXYS]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1200V V(RRM), Silicon, TO-220AC, TO-220, 2 PIN;
| 型号： | DSEP29-12B |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1200V V(RRM), Silicon, TO-220AC, TO-220, 2 PIN 软恢复二极管 快速软恢复二极管 局域网 光电二极管 |
| 文件： | 总4页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEP29-12B
advanced
=
=
=
VRRM
IFAV
trr
1200V
30A
HiPerFRED
45ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP29-12B
Backside: cathode
3
1
TO-220
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Antiparallel diode for high frequency
switching devices
● Industry standard outline
● RoHS compliant
● Very short recovery time
● Antisaturation diode
● Epoxy meets UL 94V-0
● Improved thermal behaviour
● Very low Irm-values
● Snubber diode
● Free wheeling diode
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a
© 2016 IXYS all rights reserved
DSEP29-12B
advanced
Ratings
Fast Diode
Symbol
VRSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
1200
1200
100
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current, drain current
VR =1200 V
µA
VR =1200 V
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
TC = 110°C
rectangular
0.5 mA
forward voltage drop
3.25
V
V
V
V
A
VF
3.90
2.20
2.85
30
TVJ
=
°C
150
average forward current
threshold voltage
TVJ = 175°C
TVJ = 175°C
IFAV
d = 0.5
1.10
V
VF0
rF
for power loss calculation only
slope resistance
30 mΩ
0.9 K/W
K/W
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
IFSM
CJ
0.50
TC = 25°C
TVJ = 45°C
TVJ = 25°C
165
200
W
A
total power dissipation
max. forward surge current
junction capacitance
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 600V f = 1 MHz
12
7
pF
A
max. reverse recovery current
IRM
TVJ = 25°C
TVJ = 100°C
TVJ = 25°C
TVJ = 100°C
11
50
140
A
IF = 30 A; VR = 600 V
reverse recovery time
/dt = 200A/µs
-diF
ns
ns
trr
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a
© 2016 IXYS all rights reserved
DSEP29-12B
advanced
Ratings
Package TO-220
Symbol
IRMS
Definition
Conditions
per terminal
min. typ. max. Unit
35
175
150
150
A
°C
°C
°C
g
RMS current
-55
-55
-55
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
2
Weight
0.4
20
0.6 Nm
60
MD
mounting torque
F
N
mounting force with clip
C
Product Marking
Part Number
Logo
XXXXXX
Zyyww
Assembly Line
Lot #
abcdef
Date Code
Ordering
Standard
Ordering Number
DSEP29-12B
Marking on Product
DSEP29-12B
Delivery Mode
Quantity Code No.
50 501196
Tube
Similar Part
DSEP29-12A
Package
TO-220AC (2)
Voltage class
1200
TVJ = 175°C
Equivalent Circuits for Simulation
* on die level
Fast
Diode
V0
I
R0
threshold voltage
slope resistance *
1.1
V
V0 max
R0 max
27
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a
© 2016 IXYS all rights reserved
DSEP29-12B
advanced
Outlines TO-220
A
Dim.
Millimeter
Min.
Inches
= supplier option
Max. Min.
Max.
A1
E
A
A1
A2
4.32
1.14
2.29
4.82
1.39
2.79
0.170 0.190
0.045 0.055
0.090
0.110
ØP
4
b
b2
0.64
1.15
1.01
1.65
0.025 0.040
0.045 0.065
C
D
0.35
14.73 16.00
0.56
0.014 0.022
0.580 0.630
1
3
E
e
H1
9.91 10.66
0.390 0.420
2x b2
2x b
5.08
5.85
BSC
6.85
0.200
BSC
0.230 0.270
L
L1
12.70 13.97
0.500 0.550
0.110 0.230
2.79
5.84
C
ØP
Q
3.54
2.54
4.08
3.18
0.139 0.161
0.100 0.125
e
A2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a
© 2016 IXYS all rights reserved
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