DSEP2X25-12C [IXYS]
HiPerDynFRED Epitaxial Diode with soft recovery; HiPerDynFRED外延二极管具有软恢复
| 型号： | DSEP2X25-12C |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerDynFRED Epitaxial Diode with soft recovery |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEP 2x25-12C
HiPerDynFREDTM Epitaxial Diode
with soft recovery
IFAV = 2x25 A
VRRM = 1200 V
trr = 30 ns
SOT-227 B
miniBLOC
VRSM
V
VRRM
V
Type
1200
1200
DSEP 2x 25-12C
Symbol
Test Conditions
Maximum Ratings
Features
• International standard package miniBLOC
• Isolation voltage 2500 V~
• UL registered E 72873
• 2 independent FRED in 1 package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
IFRMS
IFAVM
100
25
A
A
TC = 90°C; rectangular, d = 0.5
IFSM
EAS
TVJ = 45°C; tp = 10 ms (50 Hz), sine
250
0.2
A
TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
• Soft recovery behaviour
Applications
Ptot
VISOL
Md
TC = 25°C
210
W
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
50/60 Hz, RMS, IISOL ≤ 1 mA
2500
V~
mounting torque (M4)
terminal connection torque (M4)
1.1-1.5/9-13
1.1-1.5/9-13
Nm/lb.in.
Nm/lb.in.
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Weight
Symbol
typical
30
g
Test Conditions
Characteristic Values
typ.
max.
IR
①
②
VR = VRRM; TVJ = 25°C
TVJ = 150°C
0.25
2.0
mA
mA
Advantages
VF
IF = 25 A;
TVJ = 125°C
TVJ = 25°C
3.0
4.7
V
V
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-onlossinthecommutatingswitch
RthJC
RthCH
0.6
K/W
K/W
with heatsink compound
0.1
30
trr
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
ns
IRM
VR = 100 V; IF = 50 A;
-diF/dt = 100 A/µs; TVJ = 100°C
3.0
4.0
A
Dimensions see Outlines.pdf
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0%
② Pulse Width = 300 µs, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1 - 2
DSEP 2x25-12C
80
A
800
nC
25
TVJ = 100°C
TVJ = 100°C
VR = 600 V
A
VR = 600 V
700
20
Qr
60
40
20
0
IRM
IF = 60 A
IF = 30 A
IF = 15 A
IF
600
500
400
300
200
00
TVJ = 150°C
TVJ = 100°C
IF = 60 A
15
10
5
IF = 30 A
IF = 15 A
TVJ
= 25°C
0
V
A/µs
-diF/dt
0
1
2
3
4
5
VF
6
7
100
1000
0
200 400 600 1000
A/µs
-diF/dt
Fig. 1 Forward current IF
versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
2.5
2.0
160
40
V
0.6
TVJ = 100°C
IF = 100 A
TVJ = 100°C
VR = 600 V
ns
140
µs
t
30
0.5
rr 120
100
80
Kf
tfr
IF = 60 A
IF = 30 A
IF = 15 A
VFR
1.5
1.0
0.5
0.0
20
0.4
0.3
0.
tfr
60
IRM
10
0
40
Qrr
40
VFR
20
A/µs
0
80
120
160
0
200 400 600 1000
0
200 400 600 1000
C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR, tfr
versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
2
3
4
5
0.037
0.07
0.246
0.176
0.07
0.00024
0.0036
0.0235
0.142
0.7
ZthJC
0.1
DSEP 2x25-12C
0.01
0.001
s
0.01
0.1
1
10
t
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
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