DSEP2X60-12A [IXYS]
HiPerFREDTM Epitaxial Diode with soft recovery; HiPerFREDTM外延二极管具有软恢复
| 型号： | DSEP2X60-12A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFREDTM Epitaxial Diode with soft recovery |
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEP 2x 60-12A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 2x 60 A
VRRM = 1200 V
trr = 40 ns
miniBLOC, SOT-227 B
VRSM
V
VRRM
V
Type
1200
1200
DSEP 2x 60-12A
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
100
60
A
A
TC = 80°C; rectangular, d = 0.5
Features
IFSM
EAS
TVJ = 45°C; tp = 10 ms (50 Hz), sine
800
28
A
①
International standard package
TVJ = 25°C; non-repetitive
IAS = 16 A; L = 180 µH
mJ
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
①
IAR
VA = 1.25·VR typ.; f = 10 kHz; repetitive
1.6
A
①
①
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
①
①
①
Ptot
TC = 25°C
200
W
①
①
VISOL
50/60 Hz, RMS
2500
V~
Soft recovery behaviour
IISOL ≤ 1 mA
Applications
Md
mounting torque (M4)
terminal connection torque (M4)
1.1-1.5/9-13
1.1-1.5/9-13
Nm/lb.in.
Nm/lb.in.
①
Antiparallel diode for high frequency
Weight
typical
30
g
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
①
①
①
Symbol
Conditions
Characteristic Values
typ.
max.
and motor control circuits
Rectifiers in switch mode power
①
IR
①
①
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
1
4
mA
mA
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
①
①
VF
IF = 60 A;
TVJ = 125°C
TVJ = 25°C
1.70
2.42
V
V
①
RthJC
RthCH
0.6
K/W
K/W
Advantages
0.1
40
trr
IF = 1 A; -di/dt = 400 A/µs;
VR = 30 V; TVJ = 25°C
ns
①
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
①
IRM
VR = 100 V; IF = 200 A; -diF/dt = 100 A/µs
TVJ = 100°C
8
A
EMI/RFI
Low IRM reduces:
①
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
① Pulse Width = 300 µs, Duty Cycle < 2.0 %
Dimensions see Outlines.pdf
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
1 - 2
DSEP 2x 60-12A
100
A
15.0
µC
120
A
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
12.5
Qr
80
IRM
IF
TVJ=150°C
TVJ=100°C
TVJ= 25°C
10.0
7.5
5.0
2.5
0
80
40
0
60
40
20
0
IF= 120A
IF= 60A
IF= 30A
IF= 120A
IF= 60A
IF= 30A
V
A/µs
0
1
2
VF
3
100
1000
0
200 400 600 1000
A/µs
-diF/dt
-diF/dt
Fig. 1 Forward current IF versus VF
2.0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
300
60
1.2
TVJ= 100°C
ns
VR = 600V
V
µs
280
VFR
VFR
40
trr
tfr
1.5
Kf
tfr
0.8
260
240
220
200
1.0
IF= 120A
IF= 60A
IF= 30A
IRM
20
0
0.4
0.5
Qr
TVJ= 100°C
IF = 60A
0.0
0.
A/µs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
°C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
0.1
1
2
3
4
0.212
0.248
0.063
0.077
0.0055
0.0092
0.0007
0.0391
ZthJC
0.01
0.001
DSEP 2x61-12A
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
10
t
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2002 IXYS All rights reserved
2 - 2
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