DSEP30-03A [IXYS]
HiPerFRED Epitaxial Diode with soft recovery; HiPerFRED外延二极管具有软恢复
| 型号： | DSEP30-03A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFRED Epitaxial Diode with soft recovery |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEP 30-03A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 30 A
VRRM = 300 V
trr = 30 ns
TO-247 AD
VRSM
V
VRRM
V
Type
A
C
C
A
300
300
DSEP 30-03A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
Conditions
Maximum Ratings
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
IFRMS
IFAVM
70
30
A
A
TC = 135°C; rectangular, d = 0.5
IFSM
EAS
TVJ = 45°C; tp = 10 ms (50 Hz), sine
300
1.2
A
• Soft recovery behaviour
• Epoxy meets UL 94V-0
TVJ = 25°C; non-repetitive
IAS = 3 A; L = 180 µH
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.3
A
Applications
TVJ
TVJM
Tstg
-55...+175
175
-55...+150
°C
°C
°C
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
Ptot
TC = 25°C
mounting torque
typical
165
0.8...1.2
6
W
Nm
g
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
Md
Weight
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Symbol
Conditions
Characteristic Values
typ.
max.
Advantages
IR
①
②
VR = VRRM
VR = VRRM
;
;
TVJ = 25°C
TVJ = 150°C
250
1
µA
mA
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low IRM reduces:
VF
IF = 30 A;
TVJ = 150°C
TVJ = 25°C
1.14
1.55
V
V
RthJC
RthCH
0.9
K/W
K/W
- Power dissipation within the diode
- Turn-on loss in the commutating switch
0.25
25
trr
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
ns
Dimensions see pages Outlines.pdf
IRM
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
2.5
3.5
A
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1 - 2
DSEP 30-03A
60
A
800
nC
30
A
TVJ = 100°C
VR = 150V
TVJ = 100°C
VR = 150V
25
600
400
200
0
IRM
IF
40
Qr
20
15
10
5
IF = 60A
IF = 30A
IF = 15A
IF = 60A
IF = 30A
IF = 15A
TVJ=150°C
TVJ=100°C
TVJ= 25°C
20
0
0
V
0.0
0.5
1.0
VF
1.5
A/µs
-diF/dt
100
1000
0
200 400 600 1000
A/µs
-diF/dt
Fig. 1 Forward current IF vs. VF
Fig. 2 Reverse recovery charge
Qr versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
1.4
1.2
1.0
0.8
0.6
0.4
90
ns
14
V
1.2
TVJ = 100°C
IF = 30A
TVJ = 100°C
VR = 150V
µs
1.0
80
70
60
50
40
trr
VFR
12
tfr
tfr
Kf
0.8
0.6
0.4
0.2
0.0
VFR
IRM
IF = 60A
IF = 30A
IF = 15A
Qr
10
8
A/µs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
°C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
Fig. 5 Recovery time trr
versus -diF/dt
Fig. 6 Peak forward voltage VFR
and tfr versus diF/dt
1
Constants for ZthJC calculation:
K/W
0.1
i
Rthi (K/W)
ti (s)
1
2
3
0.465
0.179
0.256
0.005
0.0003
0.04
ZthJC
0.01
0.001
DSEP30-03A/DSEC 60-03A
NOTE: Fig. 2 to Fig. 6 shows typical values
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
2 - 2
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