DSEP2X61-12B [LITTELFUSE]
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 1200V V(RRM), Silicon,;
| 型号： | DSEP2X61-12B |
| 厂家： | 
LITTELFUSE |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 2 Element, 1200V V(RRM), Silicon, 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总4页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEP2x61-12B
advanced
=
VRRM
IFAV
trr
1200V
60A
HiPerFRED
= 2x
=
35ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSEP2x61-12B
Backside: isolated
2
3
1
4
SOT-227B (minibloc)
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
V~
3000
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a
© 2016 IXYS all rights reserved
DSEP2x61-12B
advanced
Ratings
Fast Diode
Symbol
VRSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
1200
1200
200
1
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current, drain current
VR =1200 V
µA
mA
V
VR =1200 V
IF = 60 A
IF = 120 A
IF = 60 A
IF = 120 A
TC = 80°C
rectangular
forward voltage drop
2.90
3.50
2.00
2.60
60
VF
V
TVJ
=
°C
V
150
V
average forward current
threshold voltage
TVJ = 150°C
TVJ = 150°C
A
IFAV
d = 0.5
1.10
V
VF0
rF
for power loss calculation only
slope resistance
12 mΩ
0.6 K/W
K/W
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
IFSM
CJ
0.10
TC = 25°C
TVJ = 45°C
TVJ = 25°C
200
800
W
A
total power dissipation
max. forward surge current
junction capacitance
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 600V f = 1 MHz
48
11
pF
A
max. reverse recovery current
IRM
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
17
A
IF = 60 A; VR = 600 V
reverse recovery time
/dt = 200A/µs
-diF
70
ns
ns
trr
210
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a
© 2016 IXYS all rights reserved
DSEP2x61-12B
advanced
Ratings
Package SOT-227B (minibloc)
Symbol
IRMS
Definition
Conditions
per terminal
min. typ. max. Unit
100
150
125
150
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
30
Weight
1.1
1.1
1.5 Nm
MD
mounting torque
terminal torque
M
1.5 Nm
T
terminal to terminal
terminal to backside
10.5
8.6
3.2
mm
mm
V
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
6.8
t = 1 second
3000
2500
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Product Marking
Part No.
Logo
XXXXX
®
Zyyww
abcd
Assembly Line
DateCode
Assembly Code
Ordering
Ordering Number
Marking on Product
Delivery Mode
Quantity Code No.
10 520842
Standard
DSEP2x61-12B
DSEP2x61-12B
Tube
Similar Part
Package
Voltage class
DSEP2x61-12A
SOT-227B (minibloc)
1200
TVJ = 150°C
Equivalent Circuits for Simulation
* on die level
Fast
Diode
V0
I
R0
threshold voltage
slope resistance *
1.1
V
V0 max
R0 max
10
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a
© 2016 IXYS all rights reserved
DSEP2x61-12B
advanced
Outlines SOT-227B (minibloc)
2
3
1
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161014a
© 2016 IXYS all rights reserved
相关型号：
DSEP30-06CR
HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface)
IXYS
DSEP30-12B
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1200V V(RRM), Silicon, TO-247,
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明