DSEP2X61-03A [IXYS]

HiPerFRED Epitaxial Diode with soft recovery; HiPerFRED外延二极管具有软恢复
DSEP2X61-03A
型号: DSEP2X61-03A
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

HiPerFRED Epitaxial Diode with soft recovery
HiPerFRED外延二极管具有软恢复

二极管
文件: 总2页 (文件大小:38K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DSEP 2x 61-03A  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 2x 60 A  
VRRM = 300 V  
trr = 30 ns  
miniBLOC, SOT-227 B  
VRSM  
V
VRRM  
V
Type  
300  
300  
DSEP 2x 61-03A  
Symbol  
Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
100  
60  
A
A
TC = 75°C; rectangular, d = 0.5  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
600  
1.6  
A
International standard package  
TVJ = 25°C; non-repetitive  
IAS = 4 A; L = 180 µH  
mJ  
miniBLOC  
Isolation voltage 2500 V~  
UL registered E 72873  
2 independent FRED in 1 package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.4  
A
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Ptot  
TC = 25°C  
140  
W
VISOL  
50/60 Hz, RMS  
2500  
V~  
Soft recovery behaviour  
IISOL £ 1 mA  
Applications  
Md  
mounting torque (M4)  
terminal connection torque (M4)  
1.1-1.5/9-13  
1.1-1.5/9-13  
Nm/lb.in.  
Nm/lb.in.  
Antiparallel diode for high frequency  
Weight  
typical  
30  
g
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
and motor control circuits  
Rectifiers in switch mode power  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
0.65  
2.5  
mA  
mA  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
VF  
IF = 60 A;  
TVJ = 125°C  
TVJ = 25°C  
1.26  
1.68  
V
V
RthJC  
RthCH  
0.85  
K/W  
K/W  
Advantages  
0.1  
30  
trr  
IF = 1 A; -di/dt = 300 A/ms;  
VR = 30 V; TVJ = 25°C  
ns  
Avalanche voltage rated for reliable  
operation  
Soft reverse recovery for low  
IRM  
VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms  
TVJ = 100°C  
4.8  
A
EMI/RFI  
Low IRM reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 ms, Duty Cycle < 2.0 %  
Dimensions see outlines.pdf  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  
DSEP 2x 61-03A  
160  
A
800  
nC  
25  
A
TVJ = 100°C  
TVJ = 100°C  
VR = 150V  
VR = 150V  
20  
15  
10  
5
120  
600  
400  
200  
0
IRM  
IF = 120A  
IF = 60A  
IF = 30A  
IF  
Qr  
TVJ=150°C  
TVJ=100°C  
IF = 120A  
IF = 60A  
IF = 30A  
80  
40  
0
TVJ= 25°C  
0
V
0.0  
0.5  
1.0  
1.5  
VF  
2.0  
A/ s  
-diF/dt  
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
Fig. 1 Forward current IF versus VF  
Fig. 2 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 3 Peak reverse current IRM  
versus -diF/dt  
1.4  
90  
14  
0.85  
µs  
TVJ = 100°C  
TVJ = 100°C  
ns  
V
IF = 60A  
VR = 150V  
1.2  
Kf  
12  
0.80  
trr  
VFR  
tfr  
80  
tfr  
VFR  
1.0  
10  
8
0.75  
0.70  
0.65  
0.60  
IF = 120A  
IRM  
70  
60  
50  
IF = 60A  
IF = 30A  
0.8  
Qr  
0.6  
0.4  
6
4
A/ s  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/ s  
diF/dt  
TVJ  
-diF/dt  
Fig. 4 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 5 Recovery time trr versus -diF/dt  
Fig. 6 Peak forward voltage VFR and tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
1
2
3
4
0.307  
0.353  
0.089  
0.101  
0.0055  
0.009  
0.0007  
0.04  
ZthJC  
0.01  
0.001  
DSEP 2x61-03A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t
Fig. 7 Transient thermal resistance junction to case  
NOTE: Fig. 2 to Fig. 6 shows typical values  
© 2000 IXYS All rights reserved  
2 - 2  

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