DSEP2X31-12A [IXYS]
High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs; 高性能快恢复二极管低损耗和软恢复并行的腿
| 型号： | DSEP2X31-12A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs |
| 文件： | 总4页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEP2x31-12A
VRRM = 1200 V
HiPerFRED
IFAV = 2x
A
30
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
trr
=
40 ns
Part number
DSEP2x31-12A
Backside: isolated
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Housing: SOT-227B (minibloc)
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
- Power dissipation within the diode
- Turn-on loss in the commutating switch
R a t i n g s
Conditions
Symbol
VRRM
IR
Definition
min. typ. max. Unit
TVJ
1200
250
1
V
µA
mA
V
max. repetitive reverse voltage
reverse current
=
=
25°C
25°C
VR = 1200V
VR = 1200V
TVJ
TVJ = 150°C
TVJ 25°C
forward voltage
VF
IF
IF
IF
IF
=
=
=
=
30A
60A
30A
60A
=
2.72
3.24
1.77
2.26
30
V
T
VJ = 150°C
V
V
IFAV
VF0
rF
TC
=
70°C
A
average forward current
threshold voltage
rectangular
d = 0.5
TVJ = 150°C
1.31
V
for power loss calculation only
slope resistance
15.4 mΩ
RthJC
TVJ
Ptot
IFSM
IRM
1.15 K/W
thermal resistance junction to case
virtual junction temperature
total power dissipation
-40
150
100
200
°C
W
A
TC
=
=
25°C
45°C
max. forward surge current
max. reverse recovery current
TVJ
t = 10 ms (50 Hz), sine
13
24
A
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
A
IF = 30 A; VR = 800V
-diF/dt = 400 A/µs
reverse recovery time
junction capacitance
trr
40
ns
ns
pF
150
12
CJ
VR = 600 V; f = 1 MHz
TVJ = 25°C
IXYS reserves the right to change limits, conditions and dimensions.
20110531b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
©
DSEP2x31-12A
Ratings
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
100
A
K/W
°C
RMS current
R thCH
Tstg
0.10
30
thermal resistance case to heatsink
storage temperature
-40
150
Weight
g
mounting torque
terminal torque
isolation voltage
MD
1.1
1.1
1.5 Nm
M
1.5 Nm
T
t = 1 second
t = 1 minute
V
3000
2500
3.2
V
V
ISOL
creepage | striking distance on surface | through air
creepage | striking distance on surface | through air
terminal to terminal
terminal to backside
dSpp/App
dSpb/Apb
10.5
8.6
mm
mm
6.8
Product Marking
Logo
Part No.
abcde
XXXXXX
YYWWZ
Assembly Code
DateCode
Assembly Line
Ordering
Part Name
Marking on Product
DSEP2x31-12A
Delivering Mode
Tube
Base Qty Code Key
10 473286
DSEP2x31-12A
Standard
IXYS reserves the right to change limits, conditions and dimensions.
20110531b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
©
DSEP2x31-12A
Outlines
SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions.
20110531b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
©
DSEP2x31-12A
70
60
50
40
30
20
10
0
5
4
3
2
1
0
60
50
40
30
20
10
0
TVJ = 125°C
VR = 800 V
TVJ = 150°C
IF = 60 A
100°C
25°C
30 A
15 A
IF = 60 A
30 A
15 A
IRM
IF
Qr
[A]
[µC]
[A]
TVJ = 125°C
VR = 800 V
0
1
23
VF [V]
4
100
1000
0
200 400 600 800 1000
-diF /dt [A/µs]
-diF /dt [A/µs]
Fig. 2 Typ. reverse recovery charge Qr
versus -diF /dt
Fig. 3 Typ. peak reverse current IRM
versus -diF /dt
Fig. 1 Forward current IF vs. VF
2.0
1.5
1.0
0.5
0.0
220
120
1.2
1.0
0.8
TVJ = 125°C
TVJ = 125°C
IF 30 A
VR = 800 V
100
200
=
IF = 60 A
30 A
80
60
40
20
0
180
VFR
15 A
trr
t
rr
Kf
[ns]
[µs]
[V]
160
140
120
0.4
0.2
0
IRM
QR
trr
VFR
0
40
80
120
160
0
200 400 600 800 1000
0
200 400 600 800 1000
-diF /dt [A/µs]
-diF /dt [A/µs]
TVJ [°C]
Fig. 5 Typ. recovery time trr vs. -diF /dt
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
2
Constants for ZthJC calculation:
1
i
Rthi (K/W)
ti (s)
1 0.368
0.0052
0.0003
0.0004
0.0092
2 0.1417
3 0.0295
4 0.5604
0.1
ZthJC
[K/W]
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
20110531b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
©
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