DSEP2X31-06B [IXYS]
HiPerFRED; HiPerFRED
| 型号： | DSEP2X31-06B |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFRED |
| 文件： | 总4页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEP2x31-06A
VRRM
IFAV = 2x
trr
=
600 V
HiPerFRED
A
30
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
=
35 ns
Part number
DSEP2x31-06A
Backside: isolated
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Housing: SOT-227B (minibloc)
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
- Power dissipation within the diode
- Turn-on loss in the commutating switch
R a t i n g s
Conditions
Symbol
VRRM
IR
Definition
min. typ. max. Unit
TVJ
600
250
1
V
µA
mA
V
max. repetitive reverse voltage
reverse current
=
=
25°C
25°C
VR = 600V
VR = 600V
TVJ
TVJ = 150°C
TVJ 25°C
forward voltage
VF
IF
IF
IF
IF
=
=
=
=
30A
60A
30A
60A
=
1.58
1.88
1.23
1.48
30
V
T
VJ = 150°C
V
V
IFAV
VF0
rF
TC
=
95°C
A
average forward current
threshold voltage
rectangular
d = 0.5
TVJ = 150°C
0.98
V
for power loss calculation only
slope resistance
8.2 mΩ
RthJC
TVJ
Ptot
IFSM
IRM
1.15 K/W
thermal resistance junction to case
virtual junction temperature
total power dissipation
-40
150
100
250
°C
W
A
TC
=
=
25°C
45°C
max. forward surge current
max. reverse recovery current
TVJ
t = 10 ms (50 Hz), sine
12
20
30
90
26
A
TVJ = 25°C
TVJ = 100°C
TVJ = 25°C
TVJ = 100°C
A
IF = 30 A; VR = 300V
-diF/dt = 400 A/µs
reverse recovery time
junction capacitance
trr
ns
ns
pF
CJ
VR = 400 V; f = 1 MHz
TVJ = 25°C
IXYS reserves the right to change limits, conditions and dimensions.
20100531a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
©
DSEP2x31-06A
Ratings
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
100
A
K/W
°C
RMS current
R thCH
Tstg
0.10
30
thermal resistance case to heatsink
storage temperature
-40
150
Weight
g
mounting torque
terminal torque
isolation voltage
MD
1.1
1.1
1.5 Nm
M
1.5 Nm
T
t = 1 second
t = 1 minute
V
3000
2500
3.2
V
V
ISOL
creepage | striking distance on surface | through air
creepage | striking distance on surface | through air
terminal to terminal
terminal to backside
dSpp/App
dSpb/Apb
10.5
8.6
mm
mm
6.8
Product Marking
Logo
Part No.
abcde
XXXXXX
YYWWZ
Assembly Code
DateCode
Assembly Line
Ordering
Part Name
Marking on Product
Delivering Mode
Tube
Base Qty Code Key
10 473928
DSEP2x31-06A
DSEP2x31-06A
Standard
Similar Part
DSEP2x31-06B
Package
Voltage Class
600
SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions.
20100531a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
©
DSEP2x31-06A
Outlines
SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions.
20100531a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
©
DSEP2x31-06A
70
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
50
40
30
20
10
0
TVJ = 100°C
VR = 300 V
TVJ = 100°C
VR = 300 V
IF = 60 A
IF
30 A
15 A
Qr
IF = 60 A
TVJ = 150°C
IRM
30 A
15 A
100°C
25°C
[A]
[nC]
[A]
0
100
0.0
0.5
1.0
VF [V]
1.5
2.0
1000
0
200 400 600 800 1000
-diF /dt [A/µs]
-diF /dt [A/µs]
Fig. 1 Forward current IF vs. VF
Fig. 3 Peak reverse current
IRM versus -diF /dt
Fig. 2 Reverse recovery charge
Qr versus -diF /dt
2.0
1.5
1.0
0.5
0.0
130
120
110
100
20
15
10
5
1.2
0.9
TVJ = 100°C
VR = 300 V
IF = 60 A
30 A
15 A
VFR
[V]
trr
0.6
[µs]
trr
TVJ = 100°C
Kf
IF
= 30 A
[ns]
90
80
70
IRM
0.3
VFR
tfr
Qr
0
0
0
40
80
120
160
0
200 400 600 800 1000
0
200 400 600 800 1000
TVJ [°C]
-diF /dt [A/µs]
-diF /dt [A/µs]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
Fig. 6 Peak forward voltage
VFR and tfr versus diF /dt
Fig. 5 Recovery time
trr versus -diF /dt
2
1
Constants for ZthJC calculation:
0.1
i
Rthi (K/W)
ti (s)
ZthJC
1 0.436
2 0.482
3 0.117
4 0.115
0.0055
0.0092
0.0007
0.0418
[K/W]
0.01
DSEP 2x31-06A
0.001
0.0001
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
20100531a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
©
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