DSEP2X101-04A [IXYS]
HiPerFRED Epitaxial Diode with soft recovery; HiPerFRED外延二极管具有软恢复
| 型号： | DSEP2X101-04A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFRED Epitaxial Diode with soft recovery |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEP 2x 101-04A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 2x 100 A
VRRM = 400 V
trr = 30 ns
miniBLOC, SOT-227 B
VRSM
V
VRRM
V
Type
400
400
DSEP 2x 101-04A
D4
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
100
100
A
A
TC = 60°C; rectangular, d = 0.5
Features
IFSM
EAS
TVJ = 45°C; tp = 10 ms (50 Hz), sine
1000
2
A
●
International standard package
TVJ = 25°C; non-repetitive
IAS = 4 A; L = 180 µH
mJ
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
●
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.4
A
●
●
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
●
●
●
Ptot
TC = 25°C
200
W
●
●
VISOL
50/60 Hz, RMS
2500
V~
Soft recovery behaviour
I
ISOL ≤ 1 mA
Applications
Md
mounting torque (M4)
terminal connection torque (M4)
1.1-1.5/9-13
1.1-1.5/9-13
Nm/lb.in.
Nm/lb.in.
●
Antiparallel diode for high frequency
Weight
typical
30
g
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
●
●
●
Symbol
Conditions
Characteristic Values
typ.
max.
and motor control circuits
Rectifiers in switch mode power
●
IR
●
●
VR = VRRM; TVJ = 25°C
TVJ = 150°C
1
4
mA
mA
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
●
●
VF
IF = 100 A; TVJ = 125°C
TVJ = 25°C
1.24
1.54
V
V
●
RthJC
RthCH
0.6
K/W
K/W
Advantages
with heatsink compound
0.1
30
●
trr
IF = 1 A; -di/dt = 400 A/µs;
VR = 30 V; TVJ = 25°C
ns
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
●
IRM
VR = 100 V; IF = 200 A; -diF/dt = 100 A/µs
TVJ = 100°C
5.5
6.8
A
EMI/RFI
Low IRM reduces:
●
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Pulse test: ● Pulse Width = 5 ms, Duty Cycle < 2.0 %
● Pulse Width = 300 µs, Duty Cycle < 2.0 %
Dimensions see Outlines.pdf
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
1 - 2
DSEP 2x 101-04A
300
A
2400
nC
50
A
TVJ = 100°C
VR = 200 V
TVJ = 100°C
VR = 200 V
250
2000
40
IRM
IF
IF = 200 A
IF = 100 A
IF = 50 A
Qr
200
150
100
50
1600
1200
800
400
0
IF = 200 A
IF = 100 A
IF = 50 A
TVJ = 150°C
TVJ = 100°C
30
20
10
0
TVJ
= 25°C
0
0.0
V
A/µs
-diF/dt
0.5
1.0
1.5
2.0
2.5
100
1000
0
200 400 600 1000
A/µs
-diF/dt
VF
Fig. 1 Forward current IF versus VF
2.0
Fig. 2 Typ. reverse recovery charge
Qr versus -diF/dt
Fig. 3 Typ. peak reverse current
IRM versus -diF/dt
160
60
1.50
µs
tfr
TVJ = 100°C
IF = 100 A
TVJ = 100°C
V
50
ns
VR = 200 V
1.25
140
tfr
trr
1.5
Kf
V
FR40
30
20
10
0
1.00
0.75
0.50
0.25
0.00
IF = 200 A
120
100
80
IF = 100 A
IF = 50 A
1.0
IRM
0.5
Qr
VFR
0.0
60
A/µs
0
40
80
120 °C 160
TVJ
0
200 400 600 1000
0
200 400 600 1000
A/µs
diF/dt
-diF/dt
Fig. 4 Typ. dynamic parameters
Qr, IRM versus TVJ
Fig. 5 Typ. recovery time
trr versus -diF/dt
Fig. 6 Peak forward voltage
VFR and tfr versus diF/dt
1
Constants for ZthJC calculation:
K/W
0.1
i
Rthi (K/W)
ti (s)
1
2
3
4
0.212
0.248
0.063
0.077
0.0055
0.0092
0.0007
0.0391
ZthJC
0.01
0.001
DSEP 2x101-04A
0.0001
s
0.0001
0.001
0.01
0.1
1
10
t
Fig. 7 Transient thermal resistance junction to case
© 2003 IXYS All rights reserved
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