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BUT76AF [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
BUT76AF
型号： BUT76AF
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：105K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUT76AF  
DESCRIPTION  
·High Voltage  
·High Speed Switching  
·High Power Dissipation  
APPLICATIONS  
·Designed for switching mode power supply, inverters,  
motor control and relay driver applications.  
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
1000  
450  
V
7
12  
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-peak  
A
ICM  
20  
A
IB  
3
A
IBM  
6
A
Collector Power Dissipation  
@TC=25℃  
PC  
40  
W
℃
℃
Tj  
Junction Temperature  
150  
-65~150  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
Thermal Resistance,Junction to Case  
1.13 ℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUT76AF  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CES  
V(BR)EBO  
VCE(  
PARAMETER  
CONDITIONS  
IC= 0.5A; IB= 0; L= 125mH  
IC= 1mA; VBE= -1.5V  
IE= 1mA; IC= 0  
MIN  
450  
1000  
7
TYP. MAX UNIT  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
V
V
V
IC= 5A; IB= 1A  
1.5  
1.6  
V
V
)
sat  
IC= 5A; IB= 1A  
VBE(  
)
sat  
VCE=1000V;VBE= -1.5V  
VCE=1000V;VBE=-1.5V;TC=100℃  
0.5  
2.0  
ICES  
mA  
mA  
IEBO  
hFE  
fT  
Emitter Cutoff Current  
VEB= 7V; IC= 0  
0.5  
DC Current Gain  
IC= 8A ; VCE= 3V  
3.2  
Current-Gain—Bandwidth Product  
Output Capacitance  
IC= 1A ; VCE= 10V  
7
MHz  
pF  
COB  
150  
IE= 0; VCB= 10V; ftest= 1.0MHz  
Switching Times;Resistive Load  
Turn-On Time  
Storage Time  
Fall Time  
1.0  
3.0  
0.8  
μs  
μs  
μs  
ton  
IC= 5A;IB1= -IB= 1A; VCE= 150V  
ts  
tf  
isc Website：www.iscsemi.cn  

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