2SC5621 [ISAHAYA]

SMALL-SIGNAL TRANSISTOR; 小信号晶体管
2SC5621
型号: 2SC5621
厂家: ISAHAYA ELECTRONICS CORPORATION    ISAHAYA ELECTRONICS CORPORATION
描述:

SMALL-SIGNAL TRANSISTOR
小信号晶体管

晶体 晶体管
文件: 总5页 (文件大小:132K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
〈SMALL-SIGNAL TRANSISTOR〉  
2SC5621  
FOR HIGH FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
DESCRIPTION  
OUTLINE DRAWING  
2SC5621 is a super mini package resin sealed silicon NPN  
epitaxial transistor.It is designed for high frequency  
application.  
Unit:mm  
1.6  
0.4  
0.4  
0.8  
FEATURE  
1
2
・High gain bandwidth product.  
fT=4.5GHz  
3
・High gain,low noise.  
・Can operate at low voltage.  
・Super mini package for easy mounting.  
APPLICATION  
For TV tuners,high frequency amplifier,celluar phone  
system.  
TERMINAL CONNECTOR  
1 : BASE  
: EMITTER  
3 : COLLECTOR  
2
EIJA:  
MAXIMUM RATINGS (Ta=25℃)  
Ratings  
Parameter  
Symbol  
Unit  
MARKING  
Collector to Base voltage  
Collector to Emitter voltage  
Emitter to Base voltage  
Collector current  
V
V
20  
12  
VCBO  
VCEO  
V
3
VEBO  
I C  
mA  
50  
Collector dissipation  
G W  
PC  
mW  
100  
Junction temperature  
Storage temprature  
Tj  
+125  
-55~+125  
TYPE NAME  
hFE ITEM  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25℃)  
Limits  
Typ  
Symbol  
Parameter  
Test conditions  
Unit  
Max  
Min  
50  
μA  
μA  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
Gain bandwidth product  
Collector output capacitance  
Insertion power gain  
1.0  
1.0  
250  
I CBO  
I EBO  
hFE  
VCB=10V, I E=0mA  
VEB=1V, IC=0mA  
VCE=5V, I C=20mA  
4.5  
1.0  
9.0  
1.5  
f T  
GHz  
pF  
VCE=5V, I E=20mA  
VCB=5V, I E=0mA, f =1MHz  
VCE=5V, I C=20mA, f =1GHz  
VCE=5V, I C=5mA, f =1GHz  
Cob  
S21  
2
7.5  
dB  
dB  
Noise figure  
NF  
〈SMALL-SIGNAL TRANSISTOR〉  
2SC5621  
FOR HIGH FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
DC FORWARD CURRENTGAIN  
VS. COLLECTOR CURRENT  
COMMON EMITTER TRANSFER  
1000  
100  
10  
100  
10  
Ta=25℃  
VCE=5V  
Ta=25℃  
VCE=5  
1
0.1  
0.01  
1
0.001  
0.1  
1
10  
100  
0.5  
0.6  
0.7  
0.8  
0.9  
1
BASE TO EMITTER VOLTAGE VBE(V)  
COLLECTOR CURRENT IC(mA)  
GAIN BANDWIDTH PRODUCT  
VS. COLLECTOR CURRENT  
POWER GAIN VS. COLLECTOR CURRENT  
10.00  
1.00  
0.10  
20.00  
18.00  
16.00  
14.00  
12.00  
10.00  
8.00  
Ta=25  
VCE=5  
Ta=25℃  
VCE=5  
f=0.5GH  
f=1.0GH  
6.00  
4.00  
2.00  
0.00  
0.1  
1.010.0  
100.0  
0.11.010.0  
100.0  
COLLECTORCURRENT IC(mA)  
COLLECTOR CURRENT  
IC(mA)  
COLLECTOR OUTPUTCAPACITANCE  
VS. COLLECTOR TO BASE VOLTAGE  
NOISE FIGURE VS. COLLECTOR CURRENT  
10.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Ta=25℃  
IE=0mA  
Ta=25℃  
VCE=5V  
f=1.0GHz  
f=1MHz  
1.0  
0.1  
0.1  
1
10  
100  
1
10  
100  
COLLECTOR TO BASE VOLTAGE VCB(V)  
COLLECTOR CURRENT  
IC(mA)  
〈SMALL-SIGNAL TRANSISTOR〉  
2SC5621  
FOR HIGH FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
S PARAMETER  
VCE=5V,IC=10mA  
FREQUENCY  
(MHZ)  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
-155.6  
-165.3  
-172.9  
179.5  
174.2  
168.6  
163.2  
158.8  
154.2  
150.7  
146.5  
142.4  
138.8  
135.1  
131.4  
128.8  
63.2  
63.9  
65.1  
65.1  
64.7  
64.5  
63.7  
63.2  
61.9  
61.4  
60.8  
59.2  
57.9  
56.8  
55.8  
55.0  
86.2  
81.4  
77.1  
73.0  
69.3  
65.6  
62.5  
59.2  
55.9  
53.2  
50.2  
47.4  
44.7  
42.0  
39.5  
37.0  
-43.6  
-45.0  
-45.0  
-45.7  
-48.2  
-50.4  
-51.9  
-54.4  
-56.7  
-58.9  
-61.3  
-63.3  
-65.5  
-67.8  
-69.8  
-72.4  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
0.297  
0.292  
0.294  
0.287  
0.285  
0.284  
0.285  
0.283  
0.287  
0.282  
0.278  
0.285  
0.286  
0.286  
0.288  
0.287  
0.085  
0.100  
0.114  
0.128  
0.143  
0.155  
0.169  
0.182  
0.197  
0.211  
0.222  
0.236  
0.249  
0.263  
0.274  
0.288  
5.895  
4.977  
4.308  
3.791  
3.413  
3.098  
2.833  
2.631  
2.440  
2.282  
2.142  
2.030  
1.923  
1.832  
1.751  
1.677  
0.310  
0.308  
0.292  
0.291  
0.290  
0.294  
0.294  
0.302  
0.303  
0.306  
0.307  
0.310  
0.321  
0.322  
0.325  
0.330  
VCE=5V,IC=8mA  
FREQUENCY  
(MHZ)  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
-148.5  
-159.2  
-167.6  
-175.0  
178.8  
172.6  
167.4  
162.3  
157.4  
153.5  
149.1  
145.3  
141.3  
137.4  
133.9  
130.5  
60.1  
61.7  
63.2  
62.7  
63.0  
62.8  
61.9  
62.0  
60.6  
59.9  
59.7  
58.6  
57.8  
56.8  
55.6  
54.6  
87.8  
82.8  
78.2  
74.0  
70.2  
66.4  
63.0  
59.6  
56.3  
53.5  
50.6  
47.7  
44.8  
42.2  
39.5  
37.0  
-44.9  
-46.8  
-46.4  
-47.2  
-49.6  
-51.5  
-53.0  
-55.4  
-57.7  
-60.7  
-62.2  
-64.1  
-66.3  
-68.4  
-70.4  
-72.7  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
0.310  
0.305  
0.303  
0.294  
0.294  
0.290  
0.291  
0.290  
0.291  
0.286  
0.284  
0.289  
0.289  
0.292  
0.292  
0.292  
0.089  
0.101  
0.114  
0.127  
0.140  
0.154  
0.166  
0.181  
0.194  
0.206  
0.219  
0.233  
0.247  
0.258  
0.271  
0.284  
5.733  
4.852  
4.205  
3.701  
3.338  
3.028  
2.773  
2.572  
2.392  
2.232  
2.097  
1.989  
1.883  
1.797  
1.719  
1.642  
0.337  
0.331  
0.312  
0.310  
0.308  
0.310  
0.311  
0.318  
0.318  
0.317  
0.322  
0.323  
0.332  
0.335  
0.338  
0.342  
VCE=5V,IC=6mA  
FREQUENCY  
(MHZ)  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
-139.3  
-150.5  
-159.4  
-167.9  
-174.4  
178.8  
172.7  
167.4  
162.1  
158.1  
153.7  
148.7  
144.7  
140.6  
136.8  
133.3  
56.5  
57.6  
58.7  
59.0  
59.9  
59.7  
59.8  
59.1  
59.1  
59.1  
58.3  
57.5  
56.5  
56.0  
55.1  
54.3  
90.3  
84.9  
79.9  
75.4  
71.2  
67.3  
63.8  
60.3  
56.8  
54.0  
50.8  
47.8  
44.9  
42.2  
39.5  
36.9  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
0.343  
0.328  
0.323  
0.311  
0.309  
0.303  
0.302  
0.303  
0.302  
0.297  
0.294  
0.299  
0.300  
0.301  
0.302  
0.299  
0.091  
0.104  
0.115  
0.127  
0.139  
0.153  
0.163  
0.176  
0.190  
0.201  
0.214  
0.225  
0.238  
0.250  
0.263  
0.276  
5.461  
4.641  
4.036  
3.565  
3.218  
2.919  
2.675  
2.486  
2.306  
2.162  
2.029  
1.924  
1.824  
1.739  
1.666  
1.592  
0.382  
0.369  
0.347  
0.340  
0.335  
0.336  
0.335  
0.342  
0.341  
0.341  
0.345  
0.344  
0.353  
0.356  
0.360  
0.363  
-46.1  
-47.9  
-47.8  
-48.4  
-50.5  
-52.7  
-54.0  
-56.5  
-58.3  
-60.2  
-62.9  
-65.1  
-66.9  
-68.9  
-70.8  
-73.1  
〈SMALL-SIGNAL TRANSISTOR〉  
2SC5621  
FOR HIGH FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
S PARAMETER  
VCE=5V,IC=4mA  
FREQUENCY  
(MHZ)  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
51.8  
50.9  
52.4  
53.4  
53.7  
55.0  
55.1  
55.8  
55.1  
56.1  
55.7  
55.7  
55.4  
54.9  
54.8  
54.0  
MAG  
ANG  
94.1  
88.1  
82.7  
77.7  
73.0  
68.9  
65.0  
61.3  
57.5  
54.5  
51.2  
48.1  
45.0  
42.1  
39.4  
36.7  
MAG  
ANG  
-45.8  
-48.2  
-48.4  
-49.7  
-52.0  
-54.0  
-55.2  
-57.3  
-59.7  
-61.8  
-63.7  
-65.4  
-67.6  
-69.5  
-71.7  
-73.9  
-126.4  
-137.6  
-148.1  
-156.9  
-164.5  
-171.8  
-178.6  
175.5  
169.3  
165.0  
159.9  
154.5  
150.2  
145.7  
141.4  
137.7  
500.00  
0.399  
0.375  
0.364  
0.348  
0.341  
0.332  
0.329  
0.327  
0.325  
0.321  
0.318  
0.320  
0.322  
0.324  
0.324  
0.323  
0.099  
0.110  
0.118  
0.127  
0.137  
0.149  
0.159  
0.170  
0.180  
0.193  
0.203  
0.215  
0.226  
0.238  
0.250  
0.262  
4.984  
4.260  
3.729  
3.306  
2.994  
2.723  
2.502  
2.326  
2.162  
2.027  
1.905  
1.807  
1.715  
1.635  
1.564  
1.498  
0.455  
0.439  
0.408  
0.397  
0.387  
0.387  
0.383  
0.387  
0.383  
0.382  
0.385  
0.385  
0.393  
0.395  
0.397  
0.401  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
VCE=5V,IC=2mA  
FREQUENCY  
(MHZ)  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
44.1  
42.3  
42.1  
42.3  
42.3  
43.7  
44.6  
46.5  
47.2  
48.6  
50.1  
50.7  
51.9  
52.6  
52.9  
53.5  
MAG  
ANG  
100.4  
94.0  
87.7  
82.0  
76.7  
71.9  
67.4  
63.1  
58.9  
55.4  
51.8  
48.3  
44.9  
41.9  
39.0  
36.0  
MAG  
ANG  
-42.3  
-46.3  
-47.5  
-49.2  
-51.6  
-54.1  
-55.8  
-58.2  
-60.2  
-62.4  
-64.5  
-66.6  
-68.7  
-70.5  
-72.5  
-75.0  
-106.9  
-118.6  
-130.6  
-139.7  
-148.4  
-156.6  
-164.1  
-171.0  
-177.9  
176.7  
171.4  
165.0  
160.0  
154.6  
149.2  
145.1  
500.00  
0.506  
0.480  
0.453  
0.434  
0.421  
0.408  
0.398  
0.391  
0.388  
0.381  
0.377  
0.379  
0.380  
0.377  
0.380  
0.379  
0.120  
0.128  
0.133  
0.139  
0.144  
0.149  
0.154  
0.161  
0.168  
0.174  
0.183  
0.191  
0.202  
0.212  
0.223  
0.233  
4.062  
3.503  
3.115  
2.767  
2.519  
2.316  
2.129  
1.992  
1.857  
1.744  
1.643  
1.562  
1.481  
1.416  
1.357  
1.294  
0.593  
0.005  
0.004  
0.003  
0.003  
0.002  
0.002  
0.001  
0.001  
0.001  
0.001  
0.000  
0.000  
0.000  
0.000  
0.000  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
http://www.idc-com.co.jp  
6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN  
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Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable,  
but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury,  
fire or property damage.Remember to give consideration to safety when making your circuit designs, with appropriate measures  
such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction  
or mishap.  
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rights, belonging to Isahaya Electronics Corporation or a third party.  
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