2SC5622 [PANASONIC]
Silicon NPN triple diffusion mesa type(For horizontal deflection output); 硅NPN三重扩散台面型（水平偏转输出）
| 型号： | 2SC5622 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
| 文件： | 总1页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5622
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
15.5±±.5
3.±±±.3
5˚
φ 3.2±±.1
5˚
I Features
• High breakdown voltage: 1500 V
• High-speed switching
• Wide area of safe operation (ASO)
5˚
5˚
5˚
(4.±)
2.±±±.2
I Absolute Maximum Ratings TC = 25°C
1.1±±.1
±.7±±.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCES
VEBO
ICP
Rating
Unit
V
5.45±±.3
1500
1±.9±±.5
1500
V
5˚
7
V
1
2
3
1: Base
2: Collector
3: Emitter
12
A
IC
6
A
TOP-3E Package
Base current
IB
3
A
Marking Symbol: C5622
Internal Connection
TC = 25°C
Ta = 25°C
PC
40
W
Collector power
dissipation
3
Junction temperature
Storage temperature
Tj
150
°C
°C
C
Tstg
−55 to +150
B
E
I Electrical Characteristics TC = 25°C 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
50
1
Unit
µA
mA
V
Collector cutoff current
ICBO
VCB = 1000 V, IE = 0
VCB = 1500 V, IE = 0
IE = 500 mA, IC = 0
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
VEBO
hFE
7
VCE = 5 V, IC = 4 A
5
9
VCE(sat)
VBE(sat)
fT
IC = 4 A, IB = 0.8 A
5
V
V
IC = 4 A, IB = 0.8 A
1.5
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IF = 4 A
3
MHz
V
Diode forward voltage
Storage time
VF
−2
5.0
0.5
tstg
IC = 4 A, Resistance loaded
IB1 = 0.8 A, IB2 = −1.6 A
µs
Fall time
tf
µs
1
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