2SC5623 [RENESAS]
Silicon NPN Epitaxial High Frequency Low Noise Amplifier; NPN硅外延高频低噪声放大器
| 型号： | 2SC5623 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial High Frequency Low Noise Amplifier |
| 文件： | 总10页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Electric and Hitachi XX, to Renesas Technology Corp.
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corporate statement, no changes whatsoever have been made to of the document, and
these changes do not constitute any alteration to the contenelf.
Renesas Technology Home Pcom
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Customer Support Dept.
April 1, 2003
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2SC5623
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier
ADE-208-977 (Z)
1st. Edition
Nov. 2000
Features
•
•
High gain bandwidth product
fT = 26 GHz typ.
High power gain and low noise figure ;
PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz
Outline
CMPAK
1
4
1. Emitter
2. Collector
3. Emitter
4. Base
Note: Marking is
2SC5623
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
10
3.5
V
1
V
12
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Pc
50
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
ditions
Collector to base breakdown V(BR)CBO
voltage
10
—
0 µA , IE = 0
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
ICEO
IEBO
hFE
—
—
µA
V
VCB = 8 V , IE = 0
VCE = 3 V , RBE = ∞
VEB = 1 V , IC = 0
4
VCE = 2 V , IC = 10 mA
Collector output capacitance Cob
pF
VCB = 2 V , IE = 0
f = 1 MHz
Gain bandwidth product
Power gain
18
1.8
—
GHz
dB
VCE = 2 V , IC = 10 mA
f = 2 GHz
—
VCE = 2 V , IC = 10 mA
f = 1.8 GHz
Noise figure
2.3
dB
VCE = 2 V , IC = 3 mA
f = 1.8 GHz
2SC5623
Main Characteristics
DC Current Transfet Ratio vs.
Collector Current
Collector Power Dissipation Curve
200
100
200
150
100
50
V
= 2 V
CE
0
50
100
150
200
50
(mA)
100
t
I
C
Ambient Temperature Ta (°C)
Collector Output Capa
Collector to Bas
Gain Bandwidth Product vs.
Collector Current
1.0
0.8
0.6
0.4
0.2
0
0
40
30
20
V
= 2 V
CE
10
0
0.2
0.5
2
0.1
1
10
(V)
5
10
Collector Current
20
I
1
2
5
50 100
(mA)
Collector to Base Voltage
V
C
CB
2SC5623
Power Gain vs. Collector Current
= 2 V
Noise Figure vs. Collector Current
= 2 V
20
16
12
8
5
4
3
2
1
0
V
V
CE
CE
f = 1.8GHz
4
f = 1.8GHz
20
0
1
2
5
10
50 100
(mA)
50
20
100
1
(mA)
Collector Current
I
C
S Parameter vs. Collector
21
20
16
12
8
4
f = 2GHz
20
50
0
1
2
5
10
100
Collector Current
I
(mA)
C
2SC5623
S21 Paramter vs. Frequency
S11 Parameter vs. Frequency
Scale: 6 / div.
1
90
.8
1.5
60
.6
120
2
.4
3
30
4
150
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180
0
−10
−5
−4
−.2
−30
−150
−3
−.4
−2
60
−1
−.6
−1.5
−.8
−1
mA
Condition : V
= 2 V , I = 10 mA
C
CE
100 to 3000 MHz (100 MHz step)
z step)
S12 Parameter vs. Frequency
er vs. Frequency
Scale: 0.02
1
90
8
1.5
60
120
2
3
150
4
0
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
180
−10
−5
−4
−.2
−30
−150
−3
−.4
−2
−60
−120
−.6
−1.5
−.8
−1
Condition :
Condition :
V
V
= 2 V , I = 10 mA
C
= 2 V , I = 10 mA
C
CE
CE
100 to 3000 MHz (100 MHz step)
100 to 3000 MHz (100 MHz step)
2SC5623
Sparameter ( VCE = 2 V, IC = 10 mA, Zo = 50 Ω )
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
21.32
20.95
20.35
19.65
18.72
17.65
16.61
15.54
14.54
13.62
12.78
12.05
11.36
10.64
10.15
9.59
ANG
173.3
166.2
158.9
151.7
145.2
139.3
133.9
129.3
124.4
120.5
117.1
114.1
111.0
1
MAG
ANG
95.3
92.6
91.8
87.0
83.4
79.7
75.6
7
1.1
60.4
59.7
59.1
59.2
59.3
59.2
58.6
58.4
58.2
58.3
58.2
58.2
58.3
57.8
MAG
0.971
0.971
0.961
0.941
0.911
0.876
836
.628
0.607
0.582
0.567
0.548
0.533
0.521
0.508
0.498
0.489
0.481
0.473
0.468
0.461
0.456
0.450
0.447
0.442
ANG
100
0.779
0.773
0.763
0.741
0.714
0.679
0.641
0.601
0.563
0.523
0.488
0.458
0.427
0.400
0.374
0.350
0.326
0.304
0.282
0.267
0.253
0.234
0.225
0.212
0.199
0.193
0.186
0.178
0.177
0.168
–6.9
0.0028
0.0064
0.0102
0.0142
0.0183
0.0222
0.0255
0.0286
0.0313
0.033
0.
9
.0486
0.0500
0.0517
0.0527
0.0543
0.0557
0.0573
0.0579
0.0600
0.0612
0.0624
0.0642
–3.6
200
–14.5
–22.9
–31.4
–38.7
–46.2
–53.6
–59.7
–65.6
–70.7
–75.0
–80.1
–83.8
–88.9
–91.9
–96.1
–100.1
–102.9
–107
–
–13
–135.2
–141.9
–146.0
–151.4
–157.0
–7.5
300
–12.1
–16.7
–20.8
–24.7
–27.9
–30.8
–33.1
34.9
–36.5
–37.5
–38.4
–38.9
–39.6
–39.8
–40.2
–40.2
–40.5
–40.5
–40.5
–40.7
–40.6
–40.7
–40.5
–40.7
–40.4
–40.6
–40.5
–40.9
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
9
2.6
91.0
89.6
.54
88.8
6.31
86.8
6.11
85.4
5.89
84.2
5.73
82.7
5.56
81.4
2SC5623
Package Dimensions
Unit: mm
2.0 ± 0.2
1.3 ± 0.2
0.65 0.65
+ 0.1
+ 0.1
+ 0.1
0.3
0.3
0.3
0.4
– 0.05
– 0.05
0.16
– 0.06
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.65
0.6
1.25 ± 0.2
CMPAK-4(T)
—
Conforms
0.006 g
ference value)
2SC5623
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranitachi particularly
for maximum rating, operating supply voltage range, heat radlation
conditions and other characteristics. Hitachi bears no respwhen used
beyond the guaranteed ranges. Even within the guaranforeseeable
failure rates or failure modes in semiconductor devires such as fail-
safes, so that the equipment incorporating Hitachinjury, fire or other
consequential damage due to operation of the
5. This product is not designed to be radiatio
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URL
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Europe
Asia
nductor.hitachi.com/
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apac.hitachi-asia.com
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