2SC5628 [HITACHI]
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator; NPN硅外延高频放大器/振荡器
| 型号： | 2SC5628 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Epitaxial High Frequency Amplifier / Oscillator |
| 文件： | 总10页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5628
Silicon NPN Epitaxial
High Frequency Amplifier / Oscillator
ADE-208-979A (Z)
2nd. Edition
April 2001
Features
•
•
Super compact package;
(1.4 × 0.8 × 0.59mm)
High power gain and low noise figure;
(PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)
Outline
MFPAK
3
1
2
1. Emitter
2. Base
3. Collector
Note: Marking is “XZ-”.
2SC5628
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
8
V
1.5
V
50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Pc
80
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown V(BR)CBO
voltage
15
—
—
V
IC = 10µA , IE = 0
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
ICEO
IEBO
hFE
—
—
—
50
—
—
1
µA
mA
µA
V
VCB = 12V , IE = 0
VCE = 8V , RBE = ∞
VEB = 1.5V , IC = 0
VCE = 1V , IC = 5mA
—
1
—
10
160
0.85
100
0.55
Collector output capacitance Cob
pF
VCB = 1V , IE = 0
f = 1MHz
Gain bandwidth product
Power gain
fT
6
9
—
—
GHz
dB
VCE = 1V , IC = 5mA
PG
11
14
VCE = 1V, IC = 5mA
f = 900MHz
Noise figure
NF
—
1.1
2.0
dB
VCE = 1V, IC = 5mA
f = 900MHz
2
2SC5628
Main Characteristics
DC Current Transfer Ratio vs.
Collector Current
Maximum Collector Dissipation Curve
200
100
0
200
150
100
50
V
= 5 V
CE
3 V
1 V
0
50
100
150
200
50
(mA)
100
2
5
10
20
1
Collector Current I
C
Ambient Temperature Ta (°C)
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
2.0
1.6
1.2
0.8
0.4
0
20
16
12
8
I
= 0
E
f = 1MHz
V
= 3 to 5V
CE
1 V
4
0
0.2
0.5
2
0.1
1
10
5
10
20
1
2
5
50 100
Collector Current I (mA)
Collector to Base Voltage V
(V)
C
CB
3
2SC5628
Power Gain vs. Collector Current
f = 900MHz
Noise Figure vs. Collector Current
f = 900MHz
20
16
12
8
5
4
3
2
1
0
V
= 5 V
3 V
CE
1 V
V
= 1 V to 5V
CE
4
0
1
2
5
20
10
50 100
50
(mA)
100
2
5
10
20
1
Collector Current I
Collector Current I
(mA)
C
C
S
Parameter vs. Collector Current
21
20
16
12
8
f = 1GHz
V
= 5 V
3 V
CE
1 V
4
0
1
2
5
20
10
100
50
(mA)
Collector Current I
C
4
2SC5628
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
Scale: 5 / div.
1
90
.8
1.5
60
.6
120
2
.4
3
30
4
150
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180
0
−10
−5
−4
−.2
−30
−150
−3
−.4
−2
−60
−120
−.6
−1.5
−.8
−1
−90
Condition :
V
= 1 V , I = 5mA
C
Condition : V
= 1 V , I = 5mA
C
CE
CE
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Scale: 0.08 / div.
60
1
90
.8
1.5
.6
120
2
.4
3
30
150
4
.2
0
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
180
0
−10
−5
−4
−.2
−30
−150
−3
−.4
−2
−60
−120
−.6
−1.5
−.8
−1
−90
Condition :
Condition :
V
V
= 1 V , I = 5mA
C
= 1 V , I = 5mA
C
CE
CE
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
5
2SC5628
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
Scale: 5 / div.
1
90
.8
1.5
60
.6
120
2
.4
3
30
4
150
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180
0
−10
−5
−4
−.2
−30
−150
−3
−.4
−2
−60
−120
−.6
−1.5
−.8
−1
−90
Condition :
V
= 3 V , I = 5mA
C
Condition : V
= 3 V , I = 5mA
C
CE
CE
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Scale: 0.08 / div.
60
1
90
.8
1.5
.6
120
2
.4
3
30
150
4
5
.2
0
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
180
0
−10
−5
−4
−.2
−30
−150
−3
−.4
−2
−60
−120
−.6
−1.5
−.8
−1
−90
Condition :
Condition :
V
V
= 3 V , I = 5mA
C
= 3 V , I = 5mA
C
CE
CE
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
6
2SC5628
Sparameter (VCE = 1 V, IC = 5 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
13.63
10.68
8.23
6.58
5.44
4.61
4.03
3.56
3.20
2.90
2.66
2.46
2.28
2.15
2.03
1.92
1.82
1.74
1.67
1.60
ANG
152.2
130.6
116.8
107.9
101.4
96.3
92.2
88.6
85.3
82.2
79.6
77.2
74.9
72.8
70.5
68.5
66.7
64.4
63.2
61.4
MAG
0.0509
0.0834
0.0998
0.108
0.114
0.120
0.124
0.128
0.134
0.138
0.143
0.149
0.154
0.161
0.168
0.174
0.182
0.189
0.196
0.204
ANG
67.0
51.0
42.9
39.5
38.0
38.3
39.0
39.9
41.8
43.5
44.4
46.2
47.8
49.1
50.9
51.8
53.2
54.6
55.5
56.4
MAG
0.882
0.695
0.550
0.459
0.399
0.360
0.333
0.315
0.301
0.292
0.286
0.280
0.279
0.278
0.277
0.279
0.281
0.282
0.286
0.289
ANG
100
0.815
0.734
0.692
0.665
0.650
0.644
0.640
0.641
0.638
0.638
0.643
0.643
0.648
0.651
0.658
0.663
0.667
0.669
0.673
0.682
–46.1
–32.5
200
–84.6
–58.5
300
–111.2
–127.4
–139.6
–148.8
–155.6
–161.6
–166.9
–171.6
–175.1
–178.5
178.5
–76.0
400
–88.5
500
–98.1
600
–105.7
–112.2
–117.8
–122.4
–126.7
–130.2
–133.6
–135.6
–138.6
–140.9
–143.3
–145.0
–147.1
–149.3
–150.6
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
175.4
173.2
170.0
167.2
165.0
163.1
161.0
7
2SC5628
Sparameter (VCE = 3 V, IC = 5 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
14.04
11.47
9.14
7.41
6.19
5.27
4.61
4.09
3.67
3.35
3.06
2.83
2.62
2.47
2.32
2.19
2.08
1.99
1.90
1.82
ANG
155.5
134.9
121.1
111.9
104.8
99.6
95.0
91.6
87.7
84.7
81.8
79.5
77.1
74.9
72.7
70.7
68.9
66.7
65.2
63.4
MAG
0.0412
0.0700
0.0864
0.0950
0.101
0.107
0.111
0.115
0.120
0.124
0.129
0.134
0.139
0.145
0.152
0.157
0.164
0.171
0.177
0.186
ANG
69.9
54.9
46.7
43.0
41.3
41.3
41.6
42.5
44.3
45.6
46.8
49.0
50.4
51.9
53.4
54.8
56.2
57.6
58.7
59.5
MAG
0.906
0.738
0.591
0.490
0.419
0.369
0.333
0.307
0.287
0.273
0.262
0.253
0.249
0.245
0.242
0.241
0.241
0.242
0.243
0.245
ANG
100
0.826
0.746
0.685
0.646
0.627
0.617
0.606
0.598
0.605
0.604
0.604
0.607
0.605
0.608
0.618
0.622
0.627
0.629
0.633
0.641
–39.3
–25.8
200
–74.6
–47.3
300
–100.5
–117.4
–130.7
–141.0
–149.0
–155.4
–161.3
–166.1
–170.6
–174.2
–178.2
178.9
–61.9
400
–71.9
500
–79.9
600
–85.7
700
–90.7
800
–95.3
900
–99.0
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
–102.6
–106.0
–108.8
–111.0
–114.3
–116.6
–118.9
–121.3
–123.4
–125.9
–127.7
175.5
172.4
170.0
166.9
164.3
162.3
8
2SC5628
Package Dimensions
Unit: mm
1.4 ± 0.05
+0.1
+0.1
3-0.2
0.15
–0.05
-0.05
0.45
0.45
0.9 ± 0.1
Hitachi Code
JEDEC
MFPAK
—
EIAJ
—
Mass (reference value)
0.0016 g
9
2SC5628
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive Whitebrook Park
Hitachi Europe Ltd.
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
San Jose,CA 95134
Lower Cookham Road
World Finance Centre,
Tel: <1> (408) 433-1990 Maidenhead
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Fax: <44> (1628) 585200
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Hitachi Europe GmbH
Electronic Components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright ' Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
10
相关型号：
2SC5632G
Small Signal Bipolar Transistor, 0.05A I(C), 8V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F2, 3 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明