2SC5624 [RENESAS]
Silicon NPN Epitaxial High Frequency Low Noise Amplifier; NPN硅外延高频低噪声放大器
| 型号： | 2SC5624 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial High Frequency Low Noise Amplifier |
| 文件： | 总7页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5624
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier
REJ03G0129-0300
Rev.3.00
Feb.21.2005
Features
•
High gain bandwidth product
fT = 28 GHz typ.
•
High power gain and low noise figure;
PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz
Outline
e code: PTSP0004ZA-A
2
PAK-4)
1. Emitter
2. Collector
3. Emitter
4. Base
3
1
4
Note: Marking is “VH-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
V
VCEO
VEBO
IC
Pc
Tj
Tstg
ings
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
V
V
V
mA
mW
°C
°C
Storage temperature
Note: Value on PCB (40 x 40 x 1.0mm)
Rev.3.00, Feb.21.2005, page 1 of 6
2SC5624
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
—
—
—
80
—
25
14
—
Typ
—
—
Max
1
1
10
160
0.6
—
Unit
µA
µA
Test Conditions
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
ICBO
ICEO
IEBO
hFE
Cob
fT
VCB = 8 V, IE = 0
VCE = 3 V, RBE = ∞
VEB = 0.8 V, IC = 0
VCE = 2 V, IC = 20 mA
—
µA
120
0.3
28
18
1.2
pF
GHz
dB
VCB = 2 V, IE = 0, f = 1 MHz
VCE = 2 V, IC = 30 mA, f = 2 GHz
VCE = 2 V, IC = 30 mA, f = 1.8 GHz
VCE = 2 V, IC = 5 mA, f = 1.8 GHz
PG
NF
—
1.6
Noise figure
dB
Main Characteristics
DC Current Transfer Ratio vs.
Collector Current
Maximum ColleDissipation Curve
200
100
200
150
100
50
V
= 2 V
CE
0
50
100
150
50
r Current IC (mA)
100
5
10
20
Ambient Temperature Ta (°C)
Rev.3.00, Feb.21.2005, page 2 of 6
2SC5624
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1.0
0.8
0.6
0.4
0.2
0
50
40
30
20
IE = 0
f = 1 MHz
VCE = 2 V
10
0
0.2
0.5
2
0.1
1
10
5
10
20
1
2
5
50 100
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
PowCurrent
Noise Figure vs. Collector Current
20
16
12
8
5
4
3
V
f =
VCE = 2 V
f = 1.8 GHz
4
0
1
2
5
20
10
50 100
50
100
0
20
Collector Current IC (mA)
IC (mA)
S21 Parameter vs. Collector Current
20
16
12
8
VCE = 2 V
f = 2 GHz
4
0
2
5
20
1
10
100
50
Collector Current IC (mA)
Rev.3.00, Feb.21.2005, page 3 of 6
2SC5624
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
Scale: 12 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
4
150°
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
−10
−5
−4
−.2
−30°
−150°
−3
−.4
−2
−60°
−120°
−.6
−1.5
−.8
−1
−90°
Condition ;
VCE = 2 V, IC = 30 mA
Condition ; VCE = 2 V, IC = 30 mA
100 to 300MHz step)
100 to 3000 MHz (100 MHz step)
S22 Parameter vs. Frequency
v.
1
.8
1.5
.6
120
2
.4
3
150°
4
5
10
.4 .6 .8 1
1.5 2 3 4 5 10
180°
−10
−5
−4
−3
−150°
−3
−2
−60°
−120°
−90°
Condition ;
VCE = 2 V, IC = 30 mA
A
100 to 3000 MHz (100 MHz step)
10step)
Rev.3.00, Feb.21.2005, page 4 of 6
2SC5624
S Parameter
(VCE = 2 V, IC = 30 mA, Zo = 50 Ω )
S11
S21
S12
S22
f (MHz)
100
200
300
400
500
600
700
800
MAG
ANG
–27.3
–54.4
–78.7
–98.8
–112.8
–124.3
–133.4
–141.5
–147.9
–154.1
–159.0
–164
–
172
168.9
166.8
164.1
160.9
159.0
156.6
154.5
152.2
150.7
147.6
146.9
MAG
46.66
42.27
36.16
30.59
25.84
22.15
19.22
16.94
15.05
13.63
12.45
11.48
0.60
ANG
163.5
147.1
133.0
122.2
114.5
108.9
104.4
100.8
97.7
95.3
93.3
91.3
89.6
87.7
86.1
84.7
3.4
71.3
70.3
69.0
67.9
MAG
ANG
83.8
78.6
73.6
68.8
67.1
66.1
65.0
65.3
64.4
65.1
65.2
65.0
64.5
64.7
64.3
64.1
64.4
64.3
64.0
63.8
63.1
63.0
62.3
62.3
62.0
1.6
MAG
0.904
0.846
0.750
0.650
0.561
0.487
0.426
0.376
0.335
0.301
0.273
0.250
0.229
0.213
0.197
0.186
0.173
0.164
0.156
0.148
0.142
0.135
0.130
0.125
0.121
0.117
0.113
0.109
0.105
0.102
ANG
–12.9
–26.8
–39.3
–48.8
–55.9
–61.4
–65.3
–68.6
–70.7
–72.5
–73.7
–74.5
–74.9
–75.1
–75.2
–74.7
–74.7
–74.0
–73.6
–72.7
–72.0
–71.3
–70.8
–69.9
–68.7
–68.5
–67.1
–66.8
–65.7
–65.5
0.445
0.447
0.439
0.432
0.424
0.414
0.407
0.398
0.390
0.386
0.381
0.377
0.371
0.370
0.367
0.368
0.370
0.360
0.365
0.365
0.362
0.372
0.370
0.372
0.378
0.370
0.382
0.388
0.387
0.388
0.0055
0.0115
0.0165
0.0207
0.0246
0.0277
0.0307
0.0335
0.0372
0.0398
0.0420
0.0452
0.0480
0.0509
0.0535
0.0567
0.0595
0.0623
0.0651
0.0682
.0709
37
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
6.08
5.86
5.64
5.42
5.24
5.03
4.86
4.72
Rev.3.00, Feb.21.2005, page 5 of 6
2SC5624
Package Dimensions
JEITA Package Code
SC-82A
RENESAS Code
Package Name
MASS[Typ.]
0.006g
PTSP0004ZA-A
CMPAK-4(T) / CMPAK-4(T)V
D
A
e2
B
e
Q
b1
c
B
E
HE
LP
Dimension in Millimeters
Reference
Symbol
Min
0.8
0
Nom
Max
1.1
0.1
1.0
L
A
A
1
A
2
A
3
A
A
L1
0.8
0.9
0.25
0.32
0.42
0.3
A3
b
b
0.25
0.35
0.4
0.5
x
S
A
M
e2
e
b
1
b
2
b
3
0.4
c
0.1
0.13
0.11
2.0
0.15
c
1
A
l1
D
E
e
1.8
2.2
1.15
1.25
0.65
1.35
e
H
0.6
2.1
2
b5
y
S
1.8
0.3
0.1
0.2
2.4
0.7
e1
E
L
L
0.5
1
b
L
0.6
P
l1
b
2
x
y
0.05
0.05
0.45
0.55
c
1
b
b
e
4
5
1
c
c
b4
f terminal position areas
1.5
0.2
l
0.9
1
A-A Section
B-B S
Q
Ordering Information
Part Name
Quantity
ipping Container
2SC5624VH-TL-E
3000 pcs.
Note: Therefore especially small contact area of terminal, equate soldering condition is
applied.
Contact Renesas sales office for any question regarding on of Renesas.
Rev.3.00, Feb.21.2005, page 6 of 6
Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit des
1. Renesas Technology Corp. pking semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Troupersonal injury, fire or property damage.
Remember to give due ccircuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammablfunction or mishap.
Notes regarding these mate
1. These materials are intendee selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not conveights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assingement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algord in these materials.
3. All information contained in these mrts, programs and algorithms represents information on products at the time of
publication of these materials, and are orp. without notice due to product improvements or other reasons. It is
therefore recommended that customers orized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product li
The information described here may contain .
Renesas Technology Corp. assumes no resporising from these inaccuracies or errors.
Please also pay attention to information publisheeans, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in ams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before makinormation and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss re
5. Renesas Technology Corp. semiconductors are not designem that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology orp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apr, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessaese materials.
7. If these products or technologies are subject to the Japanese export er a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulatios prohibited.
8. Please contact Renesas Technology Corp. for further details on these mat
RENESAS SALES OFFICES
w.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0
相关型号：
2SC5632G
Small Signal Bipolar Transistor, 0.05A I(C), 8V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F2, 3 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明