2SC5626 [ISAHAYA]
TRANSISTOR; 晶体管
| 型号： | 2SC5626 |
| 厂家： | 
ISAHAYA ELECTRONICS CORPORATION |
| 描述： | TRANSISTOR |
| 文件： | 总4页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢀ
〈Transistor〉
2SC5626
For High Frequency Amplify Application
Silicon NPN Epitaxial Type (Super Mini type)
DESCURIPTION
Mitsubishi 2SC5626 is a super mini packege resin sealed
silicon NPN epitaxial ty pe transistor. It is designed f or high
frequency amplif y application.
OUTLINE DRAWING
Unit:mm
2.1
0.425
0.425
1.25
FEATURE
1.30
0.65
・Super mini package f or easy mounting
0.3
1
2
・High gain band width product
2.0
3
0.65
APPLICATION
Small ty pe machine high f requency amplify
application
0.15
0.9
0.7
0～0.1
TERMINAL CONNECTOR
: BASE
1
2
3
JEITA : SC-70
JEDEC : -
: EMITTER
: COLLECTOR
MAXIMUM RATINGS (Ta=25℃)
RATINGS
UNIT
SYMBOL
PARAMETER
MARKING
VCBO
VEBO
VCEO
I C
V
V
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
30
4
20
V
Collector current
mA
S
W
50
150
Collector dissipation(Ta=25℃)
PC
mW
℃
TYPE NAME
Tj
Junction temperature
Storage temprature
+150
Tstg
℃
-55to+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMITS
PARAMETER
TEST CONDITIONS
I C=50μA, I E=0mA
SYMBOL
UNIT
TY P
MIN
30
20
4
MAX
V(BR)CBO C to B break down v oltage
V(BR)CEO C to E break down v oltage
V(BR)EBO E to B break down v oltage
V
V
V
I C=100μA, RBE=∞
I C=50μA, I C=0mA
VCB=20V, I E=0
I CBO
I EBO
hFE
Collector cut cf f current
0.5
0.5
μA
μA
Emitter cut off current
DC f orward current gain
C to E Saturation voltage
VEB=3V, I C=0
VCE=10V, I C=5mA
I C=10mA, I B=1mA
VCE=5V, I E=-10mA
VCB=6V, I E=0, f =1MHz
50
148
0.1
VCE(sat)
f T
0.3
1.5
V
Gain band width product
Collector output capacitance
600
1100
1.2
MHz
pF
Cob
ISAHAYA ELECTRONICSꢀCORPORATION
ꢀꢀ
ꢀ
〈Transistor〉
2SC5626
For High Frequency Amplify Application
Silicon NPN Epitaxial Type (SuperꢀMini type)
Common eエmミiッtタ接t地e出r力特t性ransfer
エミッタ接地伝達特性
Common emitter output
20
160μA
140μA
180μA
Ta=25℃
100
18
VCE=6V
Ta=25℃
16
14
12
10
8
120μA
100μA
10
80μA
60μA
1
40μA
6
20μA
4
2
0
IB=0μA
18 20
0.1
0
2
4
6
8
10
12
14
16
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
colleコcレtクorタ・tエoミeッmタi間tt電e圧r voltVaCEg(eV) VCE(V)
ベース・エミッタ間電圧ꢀV
(V)
base to collector voltage VBE(V)
BE
DC forward current gain
VS. collector current
collector to emitter voltage
コレクタ・エミッタ飽和電圧
直流電流増幅率－コレクタ電流特性
VS. collector current
－コレクタ電流特性
10
10000
Ta=25℃
Ta=25℃
IC/IB=10/1
VCE=10V
1000
100
10
1
0.1
0.01
1
0.11
10
100
0.1
110
100
1000
C(mA)
collectorコcレuクrタr電en流tI IC(mA)
collectコorレクcタur電r流entI CI(mCA(m) A)
collector output/input capacitance
入出力容量－ベース電圧特性
VS. Collector to Base Voltage
G利a得i帯n域b幅a積n－dエwミiッdタ電th流特p性roduct
VS. Emitter current
10000
1000
100
100.0
10.0
1.0
f=1MHz
IE=0A
VCE=5V
Ta=25℃
IC=0A
Ta=25℃
Cob
Cib
0.1
10
0.11.010.0
100.0
0.1
1
10100
コレクタ・ベース電圧ꢀV
CB(V)
collector to base voltage VCB(V)
エミッタ電流 I E (mA)
emitter current IE(mA)
emitteエrミtッoタb・aベsーe スvo電lt圧agꢀeV VEB((VV))
EB
ISAHAYA ELECTRONICSꢀCORPORATION
ꢀ
〈Transistor〉
2SC5626
For High Frequency Amplify Application
Silicon NPN Epitaxial Type (SuperꢀMini type)
Collectoコrレクtタo・ベーbスa時s定e数time constant
－エミッタ電流特性
VS. Emitter current
100
VCB=5V
f=31.8MHz
Ta=25℃
10
1
0.1
1.0
10.0
エミッタ電流ꢀI
emitter current IE((mmAA) )
E
ISAHAYA ELECTRONICSꢀCORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
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at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
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Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
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·Imf athteersiaelsp.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a
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materials or the products contained therein.
Jan.2003
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