2SC5623 [HITACHI]
SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER; NPN硅外延高频低噪声放大器
| 型号： | 2SC5623 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 文件： | 总9页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5623
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier
ADE-208-977 (Z)
1st. Edition
Nov. 2000
Features
•
•
High gain bandwidth product
fT = 26 GHz typ.
High power gain and low noise figure ;
PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz
Outline
CMPAK-4
2
3
1
4
1. Emitter
2. Collector
3. Emitter
4. Base
Note: Marking is “WH-”.
2SC5623
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
10
3.5
V
1
V
12
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Pc
50
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown V(BR)CBO
voltage
10
—
—
V
IC = 10 µA , IE = 0
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
ICEO
IEBO
hFE
—
—
—
60
—
—
1
µA
µA
µA
V
VCB = 8 V , IE = 0
—
1
VCE = 3 V , RBE = ∞
VEB = 1 V , IC = 0
—
10
140
0.4
100
0.15
VCE = 2 V , IC = 10 mA
Collector output capacitance Cob
pF
VCB = 2 V , IE = 0
f = 1 MHz
Gain bandwidth product
Power gain
fT
23
14
—
26
18
1.8
—
GHz
dB
VCE = 2 V , IC = 10 mA
f = 2 GHz
PG
NF
—
VCE = 2 V , IC = 10 mA
f = 1.8 GHz
Noise figure
2.3
dB
VCE = 2 V , IC = 3 mA
f = 1.8 GHz
2
2SC5623
Main Characteristics
DC Current Transfet Ratio vs.
Collector Current
Collector Power Dissipation Curve
200
100
0
200
150
100
50
V
= 2 V
CE
0
50
100
150
200
50
(mA)
100
2
5
10
20
1
Collector Current
I
C
Ambient Temperature Ta (°C)
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1.0
0.8
0.6
0.4
0.2
0
50
40
30
20
V
= 2 V
CE
I
= 0
E
f = 1MHz
10
0
0.2
0.5
2
0.1
1
10
(V)
5
10
Collector Current
20
I
1
2
5
50 100
(mA)
Collector to Base Voltage
V
C
CB
3
2SC5623
Power Gain vs. Collector Current
= 2 V
Noise Figure vs. Collector Current
= 2 V
20
16
12
8
5
4
3
2
1
0
V
V
CE
CE
f = 1.8GHz
4
f = 1.8GHz
20
0
1
2
5
10
50 100
(mA)
50
20
100
2
5
10
1
Collector Current
I
(mA)
Collector Current
I
C
C
S Parameter vs. Collector Current
21
20
16
12
8
V
= 2 V
CE
4
f = 2GHz
20
50
0
1
2
5
10
100
Collector Current
I
(mA)
C
4
2SC5623
S21 Paramter vs. Frequency
S11 Parameter vs. Frequency
Scale: 6 / div.
1
90
.8
1.5
60
.6
120
2
.4
3
30
4
150
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180
0
−10
−5
−4
−.2
−30
−150
−3
−.4
−2
−60
−120
−.6
−1.5
−.8
−1
−90
Condition :
V
= 2 V , I = 10 mA
C
Condition : V
= 2 V , I = 10 mA
C
CE
CE
100 to 3000 MHz (100 MHz step)
100 to 3000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Scale: 0.02 / div.
1
90
.8
1.5
60
.6
120
2
.4
3
30
150
4
.2
0
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
180
0
−10
−5
−4
−.2
−30
−150
−3
−.4
−2
−60
−120
−.6
−1.5
−.8
−1
−90
Condition :
Condition :
V
V
= 2 V , I = 10 mA
C
= 2 V , I = 10 mA
C
CE
CE
100 to 3000 MHz (100 MHz step)
100 to 3000 MHz (100 MHz step)
5
2SC5623
Sparameter ( VCE = 2 V, IC = 10 mA, Zo = 50 Ω )
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
21.32
20.95
20.35
19.65
18.72
17.65
16.61
15.54
14.54
13.62
12.78
12.05
11.36
10.64
10.15
9.59
ANG
173.3
166.2
158.9
151.7
145.2
139.3
133.9
129.3
124.4
120.5
117.1
114.1
111.0
108.5
106.0
104.0
101.7
100.1
98.1
MAG
ANG
95.3
92.6
91.8
87.0
83.4
79.7
75.6
72.7
69.5
67.8
66.0
64.1
62.8
62.4
61.0
61.1
60.4
59.7
59.1
59.2
59.3
59.2
58.6
58.4
58.2
58.3
58.2
58.2
58.3
57.8
MAG
0.971
0.971
0.961
0.941
0.911
0.876
0.836
0.795
0.756
0.720
0.687
0.657
0.628
0.607
0.582
0.567
0.548
0.533
0.521
0.508
0.498
0.489
0.481
0.473
0.468
0.461
0.456
0.450
0.447
0.442
ANG
100
0.779
0.773
0.763
0.741
0.714
0.679
0.641
0.601
0.563
0.523
0.488
0.458
0.427
0.400
0.374
0.350
0.326
0.304
0.282
0.267
0.253
0.234
0.225
0.212
0.199
0.193
0.186
0.178
0.177
0.168
–6.9
0.0028
0.0064
0.0102
0.0142
0.0183
0.0222
0.0255
0.0286
0.0313
0.0335
0.0356
0.0376
0.0393
0.0410
0.0426
0.0441
0.0455
0.0469
0.0486
0.0500
0.0517
0.0527
0.0543
0.0557
0.0573
0.0579
0.0600
0.0612
0.0624
0.0642
–3.6
200
–14.5
–22.9
–31.4
–38.7
–46.2
–53.6
–59.7
–65.6
–70.7
–75.0
–80.1
–83.8
–88.9
–91.9
–96.1
–100.1
–102.9
–107.0
–110.8
–115.2
–118.7
–122.1
–127.9
–131.8
–135.2
–141.9
–146.0
–151.4
–157.0
–7.5
300
–12.1
–16.7
–20.8
–24.7
–27.9
–30.8
–33.1
–34.9
–36.5
–37.5
–38.4
–38.9
–39.6
–39.8
–40.2
–40.2
–40.5
–40.5
–40.5
–40.7
–40.6
–40.7
–40.5
–40.7
–40.4
–40.6
–40.5
–40.9
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
9.14
8.68
8.29
7.93
96.1
7.62
94.4
7.30
92.6
7.03
91.0
6.76
89.6
6.54
88.8
6.31
86.8
6.11
85.4
5.89
84.2
5.73
82.7
5.56
81.4
6
2SC5623
Package Dimensions
As of January, 2001
Unit: mm
2.0 ± 0.2
1.3 ± 0.2
0.65 0.65
+ 0.1
+ 0.1
+ 0.1
0.3
0.3
0.3
0.4
– 0.05
– 0.05
0.16
– 0.06
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.65
0.6
1.25 ± 0.2
Hitachi Code
JEDEC
CMPAK-4(T)
—
EIAJ
Conforms
0.006 g
Mass (reference value)
7
2SC5623
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Europe
Asia
: http://semiconductor.hitachi.com/
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: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
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Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
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(Taipei Branch Office)
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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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