2SC5619_13 [ISAHAYA]

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE; 高频AMPLIFY应用硅NPN外延型


型号：	2SC5619_13
厂家：	ISAHAYA ELECTRONICS CORPORATION
描述：	FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 高频AMPLIFY应用硅NPN外延型
文件：	总4页 (文件大小：157K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SC5619

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

OUTLINE DRAWING

Unit：ｍｍ

DESCRIPTION

2SC5619 is a super mini package resin sealed silicon NPN

epitaxial transistor.

2.8

1.5

0.65

It is designed for high frequency voltage application.

①

②

FEATURE

・High gain bandwidth product. fT=4.5GHz

・High gain, low noise.

③

・Can operate at low voltage.

・Super mini package for easy mounting.

APPLICATION

For TV tuners, High frequency voltage amplifier,

Cellular phone system

TERMINAL CONNECTOR

①：BASE

JEITA：SC-59

②：EMITTER

JEDEC：Similar to TO-236

③：COLLECTOR

MAXIMUM RATINGS（Ta=25℃）

MARKING

Symbol

VCBO

VCEO

VEBO

Parameter

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

Ratings

Unit

G W

℃

Collector dissipation

Junction temperature

Storage temperature

150

TYPE NAME

hFE ITEM

＋150

-55～＋150

Tstg

ELECTRICAL CHARACTERISTICS(Ta=25℃)

Limits

Symbol

Parameter

Test conditions

Unit

Min

Typ

Max

0.5

1.0

250

ICBO

IEBO

hFE

Collector cut off current

Emitter cut off current

DC forward current gain

Gain bandwidth product

Collector output capacitance

Insertion power gain

VCB=10V, IE=0mA

μA

VEB=1V, IC=0mA

VCE=5V , IC=20mA

VCE=5V, IE=20mA

4.5

1.0

9.0

1.5

GHz

Cob

|S21|²

VCB=5V, IE=0mA , f=1MHz

VCE=5V, IC=20mA , f=1GHz

VCE=5V, IC=5mA , f=1GHz

7.5

Noise figure

ISAHAYA ELECTRONICS CORPORATION

2SC5619

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

hFE - IC

fT - IC

1000

100

VCE=5V

0.1

100

Collector current IC (mA)

Cob - Vcb

|S21e|²- IC

f=1MHz

IE=0

VCE=5V

f=500MHz

f=1GHz

0.1

100

Collector to Base voltage Vcb (V)

Collector current IC (mA)

|S21e|²- f

VCE=5V

IC=20mA

0.1

Frequency f (GHz)

ISAHAYA ELECTRONICS CORPORATION

2SC5619

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

VCE=5V/IC=20mA

Frequency

S11

Ang(deg)

S21

Ang(deg)

S12

Ang(deg)

S22

Ang(deg)

(MHz)

500

Mag

0.367

0.355

0.352

0.348

0.343

0.349

0.354

0.358

0.359

0.366

0.370

0.376

0.381

0.384

Mag

5.781

4.888

4.241

3.734

3.348

3.037

2.785

2.583

2.415

2.265

2.132

2.020

1.910

1.832

1.750

1.678

Mag

0.078

0.090

0.102

0.113

0.126

0.139

0.151

0.164

0.178

0.190

0.203

0.217

0.229

0.243

0.255

0.268

Mag

0.357

0.349

0.337

0.321

0.314

0.311

0.298

0.296

0.299

0.294

0.289

0.284

0.281

0.280

0.277

-154.0

-163.0

-171.0

-178.1

176.8

171.7

167.0

162.8

159.1

154.8

150.9

147.6

144.7

140.7

138.1

134.8

86.8

82.1

78.2

74.0

70.3

66.8

63.7

60.7

57.3

54.2

51.7

48.8

46.5

43.6

41.4

38.7

62.1

63.1

63.9

64.4

64.8

64.4

64.3

64.2

63.7

63.0

62.2

61.4

60.6

59.6

58.8

57.8

-35.8

-35.5

-35.8

-36.1

-35.9

-38.2

-38.4

-40.1

-42.2

-44.0

-46.5

-48.7

-51.4

-53.8

-56.6

-59.2

600

700

800

900

1000

1100

1200

1300

1400

1500

1600

1700

1800

1900

2000

1.0

90°

S11

Smith Chart

S21

Polar Chart

120°

60°

2.0

0.5

f=500MHz

150°

30°

0.2

5.0

f=2GHz

0°

0.2

0.5

1.0

f=2GHz

±180°

0.0

-8

-6

-4

-2

f=500MHz

-2

-4

-6

-8

-0.2

-5.0

-150°

-30°

-2.0

-0.5

-120°

-60°

-90°

-1.0

90°

1.0

0.3

60°

S12

S22

Smith Chart

120°

2.0

f=2GHz

0.5

Polar Chart

0.2

0.1

30°

150°

0.2

0.0

f=500MHz

0.2

0.5

1.0

±180°

-0.3

-0.2

-0.1

0.1

0.2

0.3

f=2GHz

f=500MHz

-0.1

-0.2

-0.3

-0.2

-150°

-30°

-2.0

-0.5

-120°

-60°

-1.0

-90°

ISAHAYA ELECTRONICS CORPORATION

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

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Jun.2013

2SC5619_13 [ISAHAYA]

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