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Q62702-A1270 [INFINEON]

Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss); 硅射频开关二极管的初步数据（用于分流配置高分流信号隔离分流低插入损耗的使用设计）
Q62702-A1270
型号： Q62702-A1270
厂家： Infineon    Infineon
描述：

Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
硅射频开关二极管的初步数据（用于分流配置高分流信号隔离分流低插入损耗的使用设计）

二极管 开关 射频开关
文件： 总4页 (文件大小：33K)
中文：  中文翻译
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BAR 81W  
Silicon RF Switching Diode  
Preliminary data  
3
• Design for use in shunt configuration  
• High shunt signal isolation  
• Low shunt insertion loss  
4
2
VPS05605  
1
Type  
Marking Ordering Code Pin Configuration  
BBs  
Package  
BAR 81W  
Q62702-A1270 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343  
Maximum Ratings  
Parameter  
Symbol  
Value  
30  
Unit  
V
Diode reverse voltage  
Forward current  
V
R
100  
mA  
mW  
°C  
I
F
100  
Total power dissipation, T = 138 °C  
P
tot  
S
Junction temperature  
150  
T
j
Operating temperature range  
Storage temperature  
-55 ...+125  
-55 ...+150  
°C  
T
T
op  
stg  
Thermal Resistance  
1)  
Junction - ambient  
K/W  
R
R
≤ 200  
≤ 120  
thJA  
thJS  
Junction - soldering point  
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm  
Semiconductor Group  
1
Sep-04-1998  
1998-11-01  
Semiconductor Group  
1
BAR 81W  
Electrical Characteristics at T = 25 °C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Characteristics  
Reverse current  
-
-
-
20  
1
nA  
V
I
R
V = 20 V  
R
Forward voltage  
0.93  
V
F
I = 100 mA  
F
AC characteristics  
Diode capacitance  
pF  
C
T
V = 1 V, f = 1 MHz  
-
-
0.6  
-
-
R
V = 3 V, f = 1 MHz  
R
0.57  
Forward resistance  
-
0.7  
-
r
Ω
f
I = 5 mA, f = 100 MHz  
F
Series inductance  
-
0.15  
-
nH  
L
s
Configuration of the shunt-diode  
- A perfect ground is essential for optimum isolation  
- The anode pins should be used as passage for RF  
Semiconductor Group  
Semiconductor Group  
2
Sep-04-1998  
1998-11-01  
2
BAR 81W  
Forward current I = f (T *;T )  
F
A
S
*): mounted on alumina 15mm x 16.7mm x 0.7mm  
120  
mA  
100  
T
S
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
I
T
A
°C  
0
20  
40  
60  
80  
100 120  
150  
T ,T  
A
S
Permissible Pulse Load  
Permissible Pulse Load R  
= f(t )  
thJS  
p
I
/ I  
= f(t )  
Fmax FDC  
p
10 2  
10 3  
K/W  
-
I
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
R
I
10 1  
0.2  
0.5  
0.5  
0.2  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -6  
10 0  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Semiconductor Group  
Semiconductor Group  
3
Sep-04-1998  
1998-11-01  
3
BAR 81W  
Forward current I = f (V )  
Forward resistance r = f(I )  
f F  
F
F
T = 25°C  
f = 100MHz  
A
10 3  
mA  
3.0  
Ohm  
2.4  
2.2  
2.0  
10 2  
I
R
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
10 1  
10 0  
10 -1  
400  
0.0  
10 -1  
10 0  
10 1  
mA  
mV  
500  
600  
700  
800  
1000  
V
I
F
F
Diode capacitance C = f (V )  
Diode capacitance C = f (V )  
T R  
T
R
f = 1MHz  
f = 100MHz  
1.0  
pF  
1.0  
pF  
0.8  
0.8  
0.7  
0.7  
C
C
0.6  
0.5  
0.4  
0.3  
0.6  
0.5  
0.4  
0.3  
0.2  
0.2  
0
V
V
1
2
3
4
5
6
7
8
10  
0
1
2
3
4
5
6
7
8
10  
V
V
R
R
Semiconductor Group  
Semiconductor Group  
4
Sep-04-1998  
1998-11-01  
4

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