Q62702-A1274 [INFINEON]
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications); 硅肖特基二极管（对于在VHF / UHF频段用于高速开关应用混频器应用）
| 型号： | Q62702-A1274 |
| 厂家： | 
Infineon |
| 描述： | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) |
| 文件： | 总3页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT 17W
Silicon Schottky Diodes
3
• For mixer applications in the VHF / UHF range
• For high-speed switching applications
2
1
VSO05561
BAT 17-05W
BAT 17W
BAT 17-04W
BAT 17-06W
Type
BAT 17W
Marking Ordering Code
Pin Configuration
Package
53s
Q62702-A1271
Q62702-A1272
Q62702-A1273
Q62702-A1274
1 = A
2 n.c.
3 = C
SOT-323
BAT 17-04W 54s
BAT 17-05W 55s
BAT 17-06W 56s
1 = A1
1 = A1
3 = C1
2 = C2
2 = A2
2 = C2
3 = C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter
Symbol
Value
4
Unit
V
Diode reverse voltage
Forward current
V
R
130
mA
mW
I
F
150
Total power dissipation 1) BAT 17W, T ≤ 97 °C P
A
tot
tot
150
BAT 17-04W, -05W, -06W
Junction temperature
, T ≤ 92 °CP
S
150
°C
T
j
Operating temperature range
Storage temperature
- 55 ...+150
- 55 ...+150
T
T
op
stg
Thermal Resistance
1)
Junction - ambient
Junction - ambient
BAT 17W
K/W
R
≤ 435
≤ 550
≤ 355
≤ 390
thJA
1)
BAS 17-04W ...
R
thJA
Junction - soldering point BAT 17W
R
thJS
Junction - soldering point BAT 17-04W ...
R
thJS
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
Semiconductor Group
1
Sep-04-1998
1998-11-01
Semiconductor Group
1
BAT 17W
Electrical Characteristics at T = 25 °C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Breakdown voltage
4
-
-
V
V
(BR)
I
= 10 µA
(BR)
Reverse current
V = 3 V
µA
I
R
-
-
-
-
0.25
10
R
V = 4 V
R
Reverse current
-
-
1.25 nA
I
R
V = 3 V, T = 60 °C
R
A
Forward voltage
I = 0.1 mA
mV
350
V
F
200
250
350
275
340
425
F
I = 1 mA
450
F
I = 10 mA
600
F
AC characteristics
Diode capacitance
0.4
-
0.55
8
0.75 pF
C
T
V = 1 V, f = 1 MHz
R
Differential forward resistance
15
r
Ω
f
I = 5 mA, f = 100 kHz
F
Semiconductor Group
Semiconductor Group
2
Sep-04-1998
1998-11-01
2
BAT 17W
Forward current I = f (V )
Diode capacitance C = f (V )
T R
F
F
T = parameter
f = 1MHz
A
10 2
mA
0.7
pF
10 1
TA = 25°C
TA = 85°C
TA = 125°C
0.5
I
C
10 0
0.4
0.3
0.2
0.1
10 -1
10 -2
0.0
V
V
0.2
0.4
0.6
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5.0
V
V
R
F
Leakage current I = f (V )
R
R
T = Parameter
A
10 2
uA
10 1
125°C
85°C
10 0
I
10 -1
10 -2
10 -3
25°C
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5.0
V
R
Semiconductor Group
Semiconductor Group
3
Sep-04-1998
1998-11-01
3
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