Q62702-A3466 [INFINEON]
Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes); 硅开关二极管阵列（对于高速开关应用的电气绝缘二极管）
| 型号： | Q62702-A3466 |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) |
| 文件： | 总4页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS 28W
Silicon Switching Diode Array
3
• For high-speed switching applications
• Electrical insulated diodes
4
2
VPS05605
1
Type
Marking Ordering Code
JTs Q62702-A3466
Pin Configuration
Package
BAS 28W
1 = C1 2 = C2 3 = A2 4 = A1 SOT-343
Maximum Ratings
Parameter
Symbol
Value
75
Unit
V
Diode reverse voltage
Peak reverse voltage
Forward current
V
V
R
85
RM
200
mA
A
I
I
F
4.5
Surge forward current, t = 1 µs
FS
250
mW
°C
Total power dissipation, T = 103 °C
P
T
T
S
tot
j
Junction temperature
Storage temperature
150
- 65 ...+150
stg
Thermal Resistance
1)
Junction - ambient
R
R
≤ 460
≤ 190
K/W
thJA
thJS
Junction - soldering point
2
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm Cu
Semiconductor Group
1
Mar-16-1998
1998-11-01
Semiconductor Group
1
BAS 28W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
85
-
-
V
Breakdown voltage
V
V
(BR)
F
I
= 10 µA
(BR)
mV
Forward voltage
I = 1 mA
-
-
-
-
-
-
-
-
715
855
F
I = 10 mA
F
I = 50 mA
1000
1250
F
I = 150 mA
F
-
-
1
µA
Reverse current
I
I
R
V = 75 V
R
Reverse current
R
V = 25 V, T = 150 °C
-
-
-
-
30
50
R
A
V = 75 V, T = 150 °C
R
A
AC characteristics
-
-
-
-
2
6
pF
ns
Diode capacitance
C
D
V = 0 V, f = 1 MHz
R
Reverse recovery time
t
rr
I = 10 mA, I = 10 mA, R = 100 Ω,
F
R
L
measured at I = 1mA
R
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ΙF
EHN00019
Pulse generator: t = 100ns, D = 0.05,
Oscillograph: R = 50Ω, t = 0.35ns,
p
r
t = 0.6ns, R = 50Ω
C ≤ 1pF
r
i
Semiconductor Group
Semiconductor Group
2
Mar-16-1998
1998-11-01
2
BAS 28W
Forward current I = f (T *;T )
Forward current I = f V )
F
A
S
F
F
* Package mounted on epoxy
T = 25°C
A
BAS 28
EHB00035
300
150
mA
5
Ι F
mA
200
100
50
0
T
S
I
150
typ
max
T
A
100
50
0
°C
0
20
40
60
80
100 120
150
0
0.5
1.0
V
1.5
T ,T
A
S
VF
Permissible Pulse Load R
= f(t )
Permissible Pulse Load
thJS
p
I
/ I
= f(t )
Fmax FDC
p
10 2
10 3
K/W
-
I
R
thJS
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
I
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.2
0.5
10 1
10 0
10 -6
10 0
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
p
t
p
Semiconductor Group
Semiconductor Group
3
Mar-16-1998
1998-11-01
3
BAS 28W
Forward voltage V = f (T )
Reverse current I = f (T )
F
A
R
A
BAS 28
EHB00037
BAS 28
EHB00034
5
4
1.0
V
10
nA
Ι F
= 100 mA
VR = 70 V
Ι R
VF
10
5
max.
10 mA
1 mA
70 V
3
10
5
0.5
0.1 mA
25 V
typ.
50
10 2
5
10 1
0
0
50
100
150
C
0
100
150
C
TA
TA
Semiconductor Group
Semiconductor Group
4
Mar-16-1998
1998-11-01
4
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