Q62702-A3461 [INFINEON]
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type); 硅双肖特基二极管（星展混频器应用到12 GHz低噪声系数中等屏障型）
| 型号： | Q62702-A3461 |
| 厂家： | 
Infineon |
| 描述： | Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Dual Schottky Diode
BAT 14-099
● DBS mixer application to 12 GHz
● Low noise figure
● Medium barrier type
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
Type
Marking Ordering Code
(tape and reel)
Pin Configuration
BAT 14-099 S9
Q62702-A3461
SOT-143
Maximum Ratings per Diode
Parameter
Symbol
Values
Unit
V
Reverse voltage
V
R
4
Forward current
I
F
90
100
mA
mW
Power dissipation, TS ≤ 55 ˚C
Storage temperature range
Operating temperature range
P
tot
T
stg
– 55 … + 150 ˚C
– 55 … + 150
T
op
Thermal Resistance
Junction – ambient2)
R
th JA
th JS
≤ 1090
≤ 930
K/W
Junction – soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.
2)
02.96
Semiconductor Group
1
BAT 14-099
Electrical Characteristics per Diode
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
Breakdown voltage
V
BR
F
4
–
–
V
IR
= 5 µA
Forward voltage
V
I
I
F
F
= 1 mA
= 10 mA
–
–
0.43
0.55
–
–
Forward voltage matching
= 10 mA
∆V
F
–
–
–
–
10
0.35
–
mV
pF
Ω
IF
Diode capacitance
= 0, f= 1 MHz
CT
–
V
R
Forward resistance
= 10 mA / 50 mA
RF
5.5
IF
Semiconductor Group
2
BAT 14-099
Forward current I
F
= f (V
F)
Forward current I
F
= f (T
S
; T *)
A
*Package mounted on alumina
Reverse current I
R
= f (V
R
)
Diode capacitance C
T
= f (V )
R
f = 1 MHz
Semiconductor Group
3
BAT 14-099
S11-Parameters
Typical impedance characteristics (with external bias I and Z
0
= Ω)
f
I = 0.02 mA
I = 0.05 mA
I = 0.1 mA
I = 0.2 mA
I = 0.5 mA
GHz MAG ANG
MAG ANG
MAG ANG
MAG ANG
MAG ANG
1
2
3
4
5
0.99
0.96
0.95
0.93
0.93
0.91
– 15.89 0.91
– 16.40 0.79
– 16.40 0.57
– 16.60 0.13
– 17.30
– 28.40
– 43.99
– 54.40
– 80.70
– 30.40 0.88
– 45.30 0.87
– 59.60 0.86
– 74.80 0.85
– 89.50 0.83
– 30.80 0.76
– 46.20 0.75
– 61.60 0.73
– 77.10 0.72
– 93.10 0.69
– 31.09 0.56
– 47.30 0.55
– 62.40 0.53
– 78.70 0.51
– 95.70 0.48
– 30.70 0.13
– 47.00 0.11
– 62.40 0.10
– 78.70 0.07
6
– 95.70 0.04 – 102.30
7
8
9
10
11
12
0.89 – 106.60 0.80 – 110.50 0.66 – 112.70 0.45 – 114.00 0.02
0.88 – 123.40 0.79 – 129.40 0.64 – 132.40 0.43 – 135.40 0.06
0.86 – 143.20 0.76 – 150.20 0.62 – 154.20 0.40 – 161.20 0.12
158.01
118.40
96.20
72.10
62.60
49.20
0.83 – 166.10 0.72 – 174.10 0.58 – 179.10 0.37
171.10 0.19
140.80 0.25
108.20 0.33
0.82
0.80
168.10 0.71
138.20 0.72
158.10 0.59
127.20 0.60
153.80 0.39
121.20 0.44
S11 = f (f, I)
Semiconductor Group
4
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