Q62702-A15 [INFINEON]
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching); 硅肖特基二极管（混频器应用在VHF / UHF频段用于高速开关）
| 型号： | Q62702-A15 |
| 厂家： | 
Infineon |
| 描述： | Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching) |
| 文件： | 总5页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Schottky Diodes
BAT 68 …
● For mixer applications in the VHF/UHF range
● For high-speed switching
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
Type
Marking
Ordering Code Pin Configuration
(tape and reel)
BAT 68
83
Q62702-A926
SOT-23
BAT 68-04
BAT 68-05
BAT 68-06
84
85
86
Q62702-A4
Q62702-A15
Q62702-A19
1)
For detailed information see chapter Package Outlines.
02.96
Semiconductor Group
1
BAT 68 …
● For mixer applications in the VHF/UHF range
● For high-speed switching
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
Type
Marking
Ordering Code Pin Configuration
(tape and reel)
BAT 68-07
87
Q62702-A44
SOT-143
Maximum Ratings per Diode
Parameter
Symbol
Values
Unit
V
Reverse voltage
V
R
8
Forward current
I
F
130
mA
mW
˚C
Power dissipation, TS ≤ 60 ˚C
Junction temperature
Storage temperature range
P
tot
150
T
j
150
T
stg
– 55 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 750
≤ 590
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
2)
Semiconductor Group
2
BAT 68 …
Electrical Characteristics per Diode
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
–
Unit
min.
max.
Breakdown voltage
VBR
8
–
V
IR
= 10 µA
Reverse current
IR
µA
V
V
R
R
= 1 V
= 1 V, T = 60 ˚C
–
–
–
–
0.1
1.2
A
Forward voltage1)
VF
mV
–
–
–
–
340
500
I
F
= 1 mA
= 10 mA
IF
Diode capacitance
= 0, f = 1 MHz
CT
–
–
1
pF
V
R
Differential forward resistance
= 5 mA, f = 10 kHz
rf
–
–
10
Ω
IF
1)
Forward voltage matching, types -04, -05, -06, -07 IF = 10 mA, ∆VF = 20 mV max.
Semiconductor Group
3
BAT 68 …
Forward current I
F
= f (V
F)
Forward current I
F
= f (T
S
, T *)
A
*Package mounted on alumina
BAT 68-04, -05, -06, -07
Forward current I
F
= f (T
S
; T
A*)
Reverse current I
R
= f (V )
R
*Package mounted on alumina
BAT 68
Semiconductor Group
4
BAT 68 …
Diode capacitance C
T
= f (V
R)
Differential forward resistance r
f
= f (I )
F
f= 1 MHz
f= 10 kHz
Semiconductor Group
5
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