AUIRF7207QTR [INFINEON]
Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8;
| 型号： | AUIRF7207QTR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 局域网 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：547K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
AUIRF7207Q
VDSS
-20V
Features
Advanced Process Technology
Low On-Resistance
Logic Level Gate Drive
P-Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
RDS(on) max
ID
0.06
-5.4A
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified*
Description
SO-8
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide
variety of other applications.
Standard Pack
Base part number
Package Type
Orderable Part Number
Form
Tube
Quantity
95
AUIRF7207Q
AUIRF7207Q
SO-8
2500
AUIRF7207QTR
Tape and Reel
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Drain-to-Source Voltage
Max.
-20
Units
V
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-5.4
-4.3
A
-43
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
2.5
W
Power Dissipation
1.6
Linear Derating Factor
0.02
± 12
W/°C
V
VGS
VGSM
EAS
TJ
Gate-to-Source Voltage
V
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
-16
mJ
140
-55 to + 150
°C
TSTG
Storage Temperature Range
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Ambient
–––
50
RJA
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
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AUIRF7207Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
-20 ––– –––
––– -0.011 ––– V/°C Reference to 25°C, ID = -1mA
Conditions
VGS = 0V, ID = -250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
V(BR)DSS/TJ
RDS(on)
–––
–––
-0.7
8.3
––– 0.06
––– 0.125
––– -1.6
V
V
GS = -4.5V, ID = -5.4A
GS = -2.7V, ID = -2.7A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
V
S
VDS = VGS, ID = -250µA
–––
––– -1.0
––– -25
––– -100
––– 100
–––
V
V
V
DS = -10V, ID = -5.4A
–––
–––
–––
–––
DS = -16V, VGS = 0V
DS = -16V, VGS = 0V, TJ = 125°C
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 12V
GS = -12V
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
2.2
5.7
11
24
43
22
3.3
8.6
–––
–––
–––
–––
–––
–––
–––
ID = -5.4A
V
V
DS = -10V
GS = -4.5V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
VDD = -10V
ID = -1.0A
RG = 6.0
RD = 10
VGS = 0V
ns
41
780
410
200
VDS = -15V
pF
ƒ = 1.0 MHz
Diode Characteristics
Symbol Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
–––
––– -3.1
––– -43
––– -1.0
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = -3.1A, VGS = 0V
IS
A
–––
ISM
A
V
VSD
dv/dt
–––
–––
5.0
––– V/ns TJ = 175°C, IS= -3.1A, VDS = -20V
–––
–––
42
50
63
75
TJ = 25°C, IF = -3.1A
di/dt = 100A/µs
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 9.6mH, RG = 25, IAS = -5.4A.
ISD -5.4A, di/dt -79A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
When mounted on 1 inch square copper board, t<10 sec.
2
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AUIRF7207Q
100
10
1
100
10
1
VGS
VGS
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
BOTTOM -2.25V
-2.25V
-2.25V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T =25
C
J
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
-5.4A
=
I
D
°
T = 25 C
J
°
T =150 C
J
10
V
= -10V
DS
V
=-10V
20µs PULSE WIDTH
GS
1
2.0
3.0
4.0
5.0
6.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
1600
10
V
= 0V,
f = 1MHz
gd , ds
I
D
= -5.4A
GS
C
= C + C
C
SHORTED
iss
gs
V
=-10V
C
= C
gd
DS
rss
C
= C + C
ds
oss
gd
8
6
4
2
0
1200
800
400
0
C
iss
C
oss
C
rss
FOR TEST CIRCUIT
SEE FIGURE13
1
10
100
0
5
10
15
20
25
30
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRF7207Q
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
°
10ms
T = 25 C
A
J
°
T = 150 C
V
= 0 V
Single Pulse
GS
1.2
0.1
0.4
1
10
100
0.6
0.7
0.9
1.1
1.4
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
6.0
5.0
4.0
3.0
2.0
1.0
0.0
400
300
200
100
0
I
D
TOP
-2.4A
-4.3A
BOTTOM -5.4A
25
50
75
100
125
150
25
50
75
100
125
150
°
( C)
°
Starting T , Junction Temperature
T , Case Temperature
( C)
C
J
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Maximum Avalanche Energy vs. Drain Current
100
D = 0.50
0.20
10
0.10
0.05
P
2
DM
0.02
1
t
1
0.01
t
2
Notes:
1. Duty factor D =t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF7207Q
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
Fig 15b. Switching Time Waveforms
Fig 15a. Switching Time Test Circuit
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
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AUIRF7207Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
0.25 [.010]
A
.1497
e
.050 BASIC
.025 BASIC
1.27 BASIC
e 1
H
K
0.635 BASIC
.2284
.0099
.016
0°
.2440
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
.0196
.050
8°
e
6X
L
y
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
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SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7207Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7207Q
Qualification Information†
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s In-
dustrial and Consumer qualification level is granted by extension of the high-
er Automotive level.
Qualification Level
Moisture Sensitivity Level
Machine Model
SO-8
MSL1
Class M1B (+/- 100V)††
AEC-Q101-002
Class H1A (+/- 500V)††
AEC-Q101-001
Class C5 (+/- 2000V)††
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device Model
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
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AUIRF7207Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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AUIRF7207Q
Revision History
Date
Comments
Added "Logic Level Gate Drive" bullet in the features section on page 1
4/3/2014
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