AUIRF7304QTR [INFINEON]
Advanced Planar Technology Low On-Resistance; 高级平面技术低导通电阻
| 型号： | AUIRF7304QTR |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology Low On-Resistance |
| 文件： | 总12页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97653A
AUTOMOTIVE GRADE
AUIRF7304Q
HEXFET® Power MOSFET
Features
l AdvancedPlanarTechnology
l LowOn-Resistance
l Dual P Channel MOSFET
l Dynamic dV/dT Rating
l Logic Level
l 150°COperatingTemperature
l Fast Switching
l Lead-Free,RoHSCompliant
l AutomotiveQualified*
1
2
3
4
8
7
S1
G1
D1
D1
V(BR)DSS
DS(on) max.
ID
-20V
0.090Ω
-4.3A
6
5
S2
D2
D2
R
G2
Top View
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
SO-8
AUIRF7304Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
10 Sec. Pulsed Drain Current, VGS @ -4.5V
Max.
-4.7
-4.3
-3.4
-17
Units
I
I
I
I
@ TA = 25°C
@ TA = 25°C
@ TA = 70°C
D
D
D
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
A
DM
Power Dissipation
P
@TA = 25°C
2.0
W
D
Linear Derating Factor
Gate-to-Source Voltage
0.016
± 12
W/°C
V
VGS
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and
-5.0
-55 to + 150
V/ns
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
RθJA
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/23/11
AUIRF7304Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-20 ––– –––
Conditions
VGS = 0V, ID = -250μA
V(BR)DSS
V
V
/ T
(BR)DSS Δ
Δ
Breakdown Voltage Temp. Coefficient ––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA
J
––– ––– 0.090
––– ––– 0.140
-0.70 ––– -1.5
V
V
GS = -4.5V, ID = -2.2A
GS = -2.7V, ID = -1.8A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
IDSS
Gate Threshold Voltage
V
S
VDS = VGS, ID = -250μA
Forward Transconductance
Drain-to-Source Leakage Current
4.0
––– ––– -1.0
––– ––– -25
––– –––
VDS = -16V, ID = -2.2A
V
V
V
DS = -16V, VGS = 0V
DS = -16V, VGS = 0V, TJ = 125°C
GS = -12V
μA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100
––– ––– 100
nA
VGS = 12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
Qgs
Qgd
td(on)
tr
––– –––
––– –––
––– –––
22
ID = -2.2A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
3.3
VDS = -16V
nC
9.0
VGS = -4.5V, See Fig. 6 & 12
VDD = -10V
–––
–––
–––
–––
–––
8.4
26
51
33
4.0
–––
–––
–––
–––
–––
ID = -2.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 4.5Ω, See Fig. 10
Between lead,
LD
D
S
Internal Drain Inductance
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
6.0
–––
and center of die contact
VGS = 0V
DS = -15V
Ciss
Coss
Crss
Input Capacitance
––– 610 –––
––– 310 –––
––– 170 –––
Output Capacitance
V
pF
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
––– ––– -2.5
A
(Body Diode)
showing the
integral reverse
G
ISM
Pulsed Source Current
(Body Diode)
––– –––
-17
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– -1.0
V
TJ = 25°C, IS = -1.8A, VGS = 0V
TJ = 25°C,IF = -2.2A
di/dt = 100A/μs
–––
–––
56
71
84
ns
nC
Qrr
110
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Starting TJ = 25°C, RG = 25Ω, IAS = -2.2A.
max. junction temperature. ( See fig. 11 )
ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
,
ꢀ When mounted on 1 inch square copper board, t<10 sec.
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2
AUIRF7304Q
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
Class M1B (+/- 100V)†††
Machine Model
AEC-Q101-002
Class H0 (+/- 250V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)†††
AEC-Q101-005
Charged Device
Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF7304Q
100
100
10
1
VGS
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
TOP
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
TOP
BOTTOM - 1.5V
BOTTOM - 1.5V
10
1
-1.5V
-1.5V
20μs PULSE WIDTH
20μs PULSE WIDTH
T
= 150°C
T
= 25°C
J
J
A
0.1
0.01
0.1
A
0.1
1
10
100
0.01
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= -3.6A
D
T = 25°C
J
T = 150°C
J
VDS = -15V
20μs PULSE WIDTH
5.0A
V
= -4.5V
GS
0.1
A
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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4
AUIRF7304Q
1500
1000
500
0
10
8
V
C
C
C
= 0V,
f = 1MHz
I
V
= -2.2A
= -16V
GS
iss
rss
oss
D
DS
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
= C + C
ds
gd
C
C
iss
6
oss
C
rss
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
A
1
10
100
0
5
10
15
20
25
-V , Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150°C
J
T = 25°C
J
1ms
°
10ms
T = 25 C
A
J
°
T = 150 C
V
GS
= 0V
Single Pulse
A
0.1
0.3
0.6
0.9
1.2
1.5
1
10
100
-V , Source-to-Drain Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
AUIRF7304Q
RD
VDS
VGS
5.0
4.0
3.0
2.0
1.0
0.0
D.U.T.
RG
-
+
VDD
-4.5 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
25
50
75
100
125
150
V
GS
°
, Case Temperature ( C)
T
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
AmbientTemperature
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
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6
AUIRF7304Q
Current Regulator
Same Type as D.U.T.
50KΩ
.2μF
.3μF
12V
Q
G
-
-4.5 V
V
+
DS
D.U.T.
Q
Q
GD
GS
V
GS
V
-3mA
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
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7
AUIRF7304Q
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig13. ForP-ChannelHEXFETS
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8
AUIRF7304Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
F7304Q
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF7304Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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10
AUIRF7304Q
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Quantity
95
AUIRF7304Q
SO-8
AUIRF7304Q
Tape and Reel
2500
AUIRF7304QTR
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11
AUIRF7304Q
IMPORTANTNOTICE
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(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
withIR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
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