AUIRF7342QTR [INFINEON]
Advanced Planar Technology Low On-Resistance; 高级平面技术低导通电阻
| 型号： | AUIRF7342QTR |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology Low On-Resistance |
| 文件： | 总11页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97640
AUTOMOTIVE GRADE
AUIRF7342Q
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Advanced Planar Technology
Low On-Resistance
Dual P-Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified*
HEXFET® Power MOSFET
1
2
3
4
8
D1
D1
S1
V(BR)DSS
-55V
0.105Ω
-3.4A
7
G1
6
5
S2
D2
D2
RDS(on) max.
ID
G2
Top View
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-resis-
tancepersiliconarea. Thisbenefitcombinedwiththefast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
SO-8
AUIRF7342Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
-55
Units
V
V
Drain-Source Voltage
DS
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-3.4
-2.7
-27
I
I
I
@ TA = 25°C
D
D
A
@ TA = 70°C
DM
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
2.0
D
D
W
Power Dissipation
1.3
0.016
± 20
Linear Derating Factor
Gate-to-Source Voltage
mW/°C
V
V
V
GS
Gate-to-Source Voltage Single Pulse tp<10μs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
30
114
5.0
V
GSM
EAS
mJ
dv/dt
V/ns
T
T
Operating Junction and
J
-55 to + 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Max.
Units
Rθ
JA
Junction-to-Ambient
62.5
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/25/2011
AUIRF7342Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-55 ––– –––
––– -0.054 –––
Conditions
VGS = 0V, ID = -250μA
V(BR)DSS
V
V
/ T
(BR)DSS Δ
Δ
Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = -1mA
J
–––
–––
-1.0
3.3
0.095 0.105
0.150 0.170
V
V
V
GS = -10V, ID = -3.4A
GS = -4.5V, ID = -2.7A
DS = VGS, ID = -250μA
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
IDSS
Gate Threshold Voltage
–––
–––
–––
–––
–––
–––
-3.0
–––
-2.0
-25
V
S
Forward Transconductance
Drain-to-Source Leakage Current
VDS = -10V, ID = -3.1A
–––
–––
–––
–––
V
V
V
DS = -55V, VGS = 0V
DS = -55V, VGS = 0V, TJ = 55°C
GS = -20V
μA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-100
100
nA
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
3.0
8.4
14
38
4.5
13
ID = -3.1A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VDS = -44V
nC
VGS = -10V, See Fig. 10
DD = -28V
22
V
10
15
ID = -1.0A
RG = 6.0Ω
RD = 16Ω
VGS = 0V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
43
64
22
32
Ciss
Coss
Crss
Input Capacitance
690
210
86
–––
–––
–––
Output Capacitance
Reverse Transfer Capacitance
VDS = -25V
ƒ = 1.0MHz, See Fig. 9
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
-2.0
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
A
G
ISM
–––
–––
-27
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
54
-1.2
80
V
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C,IF = -2.0A
di/dt = 100A/μs
ns
nC
Qrr
85
130
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 20mH,
RG = 25Ω, IAS = -3.4A. (See Figure 8)
ISD ≤ -3.4A, di/dt ≤ -150A/μs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
ꢀ When mounted on 1 inch square copper board, t<10 sec.
,
2
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AUIRF7342Q
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
Class M2 (+/- 200V)†††
Machine Model
AEC-Q101-002
Class H1A (+/- 500V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 1125V)†††
AEC-Q101-005
Charged Device
Model
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF7342Q
100
10
1
100
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
-3.0V
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
-3.0V
TOP
TOP
10
BOTTOM
BOTTOM
-3.0V
-3.0V
1
60μs PULSE WIDTH
Tj = 25°C
60μs PULSE WIDTH
Tj = -40°C
≤
≤
0.1
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
10
1
VGS
TOP
-15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
-3.0V
T
= -40°C
J
T = 25°C
J
T
= 150°C
J
10
1
BOTTOM
-3.0V
V
= -25V
DS
60μs PULSE WIDTH
Tj = 150°C
≤
≤
60μs PULSE WIDTH
0.1
0.1
0.1
1
10
100
1000
1
2
3
4
5
6
7
-V , Drain-to-Source Voltage (V)
DS
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Output Characteristics
Fig 4. Typical Transfer Characteristics
4
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AUIRF7342Q
0.240
0.200
0.160
0.120
0.080
2.0
1.5
1.0
0.5
0.0
-3.4 A
=
I
D
VGS = -4.5V
VGS = -10V
V
=-10V
GS
0
2
4
6
8
10
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-I , Drain Current (A)
D
T , Junction Temperature ( C)
J
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
vs. Temperature
Current
0.45
0.35
0.25
0.15
0.05
300
I
D
TOP
-1.5A
-2.7A
BOTTOM -3.4A
250
200
150
100
50
I
= -3.4 A
D
0
A
25
50
75
100
125
150
2
5
8
11
14
°
Starting T , Junction Temperature ( C)
J
-VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
vs. Drain Current
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5
AUIRF7342Q
1200
20
16
12
8
V
= 0V,
f = 1MHz
gd , ds
I
D
=
-3.1A
GS
V
V
V
=-48V
=-30V
=-12V
C
= C + C
gs
C
SHORTED
DS
DS
DS
iss
C
= C
gd
= C + C
ds
rss
C
960
720
480
240
0
oss
gd
C
iss
C
oss
rss
4
C
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 9. Typical Capacitance vs.
Fig 10. Typical Gate Charge vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T = -40°C
J
T
= 25°C
J
T
= 150°C
J
100μsec
10
1msec
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
1
10
100
-V , Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 11. Typical Source-Drain Diode
Fig 12. Maximum Safe Operating Area
Forward Voltage
6
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AUIRF7342Q
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
Fig 13. Maximum Drain Current vs.
Ambient Temperature
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t
/ t
2
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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7
AUIRF7342Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
F7342Q
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRF7342Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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9
AUIRF7342Q
Ordering Information
Base part number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Quantity
95
AUIRF7342Q
SO-8
AUIRF7342Q
Tape and Reel
2500
AUIRF7342QTR
10
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AUIRF7342Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right
to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to
discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or
customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject
to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applicationsusingIRcomponents. Tominimizetheriskswithcustomerproductsandapplications, customersshouldprovideadequate
design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
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unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may
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all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR
is not responsible or liable for any such statements.
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or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create
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distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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11
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