AUIRF7343Q [INFINEON]
Advanced Planar Technology Ultra Low On-Resistance; 高级平面技术超低导通电阻
| 型号： | AUIRF7343Q |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology Ultra Low On-Resistance |
| 文件： | 总13页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96343B
AUTOMOTIVE MOSFET
AUIRF7343Q
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
AdvancedPlanarTechnology
N-Ch
55V
P-Ch
-55V
N-CHANNEL MOSFET
1
2
3
4
8
UltraLowOn-Resistance
Dual N and P Channel MOSFET
SurfaceMount
Available in Tape & Reel
150°COperatingTemperature
Automotive [Q101] Qualified*
Lead-Free,RoHSCompliant
D1
D1
S1
G1
V(BR)DSS
7
6
5
S2
G2
D2
D2
RDS(on) typ.
0.043 0.095
Ω
Ω
P-CHANNEL MOSFET
max.
0.050 0.105
Ω
Ω
Top View
ID
4.7A
-3.4A
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
AutomotivequalifiedHEXFETPowerMOSFET's area150°C
junction operating temperature, fast switching speed and
improvedrepetitiveavalancherating.Thesebenefitscombine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
SO-8
The efficient SO-8 package provides enhanced thermal
characteristicsanddualMOSFETdiecapabilitymakingitideal
in a variety of power applications. This dual, surface mount
SO-8candramaticallyreduceboardspaceandisalsoavailable
in Tape & Reel.
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Units
Parameter
N-Channel
P-Channel
V
Drain-Source Voltage
55
4.7
3.8
38
-55
-3.4
-2.7
-27
V
A
DS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
DM
2.0
1.3
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
D
D
W
Power Dissipation
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
72
114
-3.4
mJ
A
4.7
EAR
0.20
± 20
Repetitive Avalanche Energy
Gate-to-Source Voltage
mJ
V
V
GS
dv/dt
5.0
-5.0
V/ns
Peak Diode Recovery dv/dt
Operating Junction and
T
T
J
-55 to + 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
–––
62.5
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
09/22/11
AUIRF7343Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
N-Ch
P-Ch
N-Ch
P-Ch
55
–––
–––
–––
–––
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250μA
-55
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
––– 0.059 –––
––– 0.054 –––
––– 0.043 0.050
––– 0.056 0.065
––– 0.095 0.105
––– 0.150 0.170
Δ
V
Δ
(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V/°C
V
V
GS = 10V, ID = 4.7A
GS = 4.5V, ID = 3.8A
N-Ch
P-Ch
RDS(on)
Ω
VGS = -10V, ID = -3.4A
VGS = -4.5V, ID = -2.7A
VDS = VGS, ID = 250μA
VDS = VGS, ID = -250μA
VDS = 10V, ID = 4.5A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
-1.0
7.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
V
V
DS = -10V, ID = -3.1A
DS = 55V, VGS = 0V
3.3
–––
–––
–––
–––
–––
VDS = -55V, VGS = 0V
-2.0
25
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
μA
VDS = 55V, VGS = 0V, TJ = 55°C
V
DS = -55V, VGS = 0V, TJ = 55°C
-25
VGS = ± 20V
IGSS
nA
––– ± 100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Conditions
Parameter
Min. Typ. Max. Units
N-Channel
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
24
36
38
3.4
4.5
10
13
12
22
4.8
15
48
64
20
32
–––
Qg
Total Gate Charge
ID = 4.5A VDS = 44V, VGS =10V
26
nC
2.3
3.0
7.0
8.4
8.3
14
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
P-Channel
ID = -3.1A VDS = -44V, VGS =-10V
N-Channel
VDD = 28V, ID=1.0A, RG = 6.0Ω
RD = 28Ω
P-Channel
3.2
10
ns
Ω
DD = -28V, ID=-1.0A, RG = 6.0
V
32
td(off)
tf
Turn-Off Delay Time
Fall Time
Ω
RD = 28
43
13
22
N-Channel
VGS = 0V, VDS = 25V, f =1.0Mhz
740
690
Ciss
Coss
Crss
Input Capacitance
190
–––
–––
Output Capacitance
Reverse Transfer Capacitance
pF
P-Channel
VGS = 0V, VDS = -25V, f =1.0Mhz
210
71
86
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
Continuous Source Current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.70
2.0
-2.0
38
I
I
S
(Body Diode)
A
Pulsed Source Current
(Body Diode)
SM
-27
1.2
T = 25°C, I = 2.0A, V = 0V
J
S
GS
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
SD
T = 25°C, I = -2.0A, V = 0V
-0.80 -1.2
J
S
GS
N-Channel
60
54
90
80
ns
nC
t
rr
T = 25°C, I = 2.0A di/dt = 100A/μs ƒ
J
F
P-Channel
120
85
170
130
Q
rr
T = 25°C, I = -2.0A di/dt = 100A/μs ƒ
J
F
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
(See fig. 22 )
N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
2
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AUIRF7343Q
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
SO-8
MSL1
Class M2 (200V)†††
Machine Model
(per AEC-Q101-002)
Class H1A (500V)†††
(per AEC-Q101-001)
Human Body Model
ESD
Class C5 (1125V)†††
(per AEC-Q101-005)
Charged Device
Model
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
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3
N-Channel
AUIRF7343Q
100
100
10
1
VGS
15V
12V
10V
8.0V
VGS
TOP
15V
12V
10V
8.0V
TOP
4.5V
V
4.5V
4.0V
4.0V
3.5V
BOTTOM 3.0V
3.5V
BOTTOM 3.0V
10
3.0V
3.0V
20μs PULSE WIDTH
°
T = 25 C
J
20μs PULSE WIDTH
°
T = 150 C
J
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
100
10
1
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
V
= 25V
DS
V
= 0 V
20μs PULSE WIDTH
GS
1
0.1
0.2
3
4
5
6
0.5
0.8
1.1
1.4
V
, Gate-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
GS
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
4
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N-Channel
AUIRF7343Q
0.120
2.5
2.0
1.5
1.0
0.5
0.0
4.7A
=
I
D
0.100
0.080
0.060
0.040
VGS = 4.5V
VGS = 10V
30
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
40
I
, Drain Current (A)
T , Junction Temperature ( C)
J
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
0.12
0.10
0.08
0.06
0.04
200
160
120
80
I
D
TOP
2.1A
3.8A
BOTTOM 4.7A
I
= 4.7A
D
40
0
A
25
50
75
100
125
150
0
2
4
6
8
10
°
Starting T , Junction Temperature ( C)
J
VGS , Gate-to-Source Voltage (V)
Fig 8. Maximum Avalanche Energy
Fig 7. Typical On-Resistance Vs. Gate
Vs. Drain Current
Voltage
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5
N-Channel
AUIRF7343Q
1200
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I =
4.5A
D
C
= C + C
iss
gs
gd ,
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C
rss
gd
1000
800
600
400
200
0
C
= C + C
oss
ds
gd
C
iss
C
oss
4
C
rss
0
0
10
20
30
40
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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P-Channel
AUIRF7343Q
100
100
10
1
VGS
-15V
-12V
-10V
-8.0V
VGS
-15V
-12V
-10V
-8.0V
TOP
TOP
-4.5V
-4.5V
-4.0V
-3.5V
BOTTOM-3.0V
-4.0V
-3.5V
BOTTOM -3.0V
10
-3.0V
-3.0V
1
20μs PULSE WIDTH
20μs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
100
10
1
100
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
V
= -25V
DS
V
= 0 V
20μs PULSE WIDTH
GS
1.2
1
0.1
0.2
3
4
5
6
7
0.4
0.6
0.8
1.0
1.4
-V , Gate-to-Source Voltage (V)
GS
-V ,Source-to-Drain Voltage (V)
SD
Fig 15. Typical Source-Drain Diode
Fig 14. Typical Transfer Characteristics
ForwardVoltage
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7
P-Channel
AUIRF7343Q
2.0
0.240
-3.4 A
=
I
D
1.5
1.0
0.5
0.0
0.200
0.160
0.120
0.080
VGS = -4.5V
VGS = -10V
V
=-10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
2
4
6
8
10
12
T , Junction Temperature ( C)
J
-I , Drain Current (A)
D
Fig 17. Typical On-Resistance Vs. Drain
Fig 16. Normalized On-Resistance
Current
Vs.Temperature
300
250
200
150
100
50
0.45
0.35
0.25
0.15
0.05
I
D
TOP
-1.5A
-2.7A
BOTTOM -3.4A
I
= -3.4 A
D
0
25
50
75
100
125
150
A
2
5
8
11
14
°
Starting T , Junction Temperature ( C)
J
-VGS , Gate-to-Source Voltage (V)
Fig 19. Maximum Avalanche Energy
Fig 18. Typical On-Resistance Vs. Gate
Vs. Drain Current
Voltage
8
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P-Channel
AUIRF7343Q
1200
960
720
480
240
0
20
V
= 0V,
f = 1MHz
gd , ds
I
D
=
-3.1A
GS
V
V
V
=-48V
=-30V
=-12V
C
= C + C
C
SHORTED
DS
DS
DS
iss
gs
C
= C
gd
rss
C
= C + C
ds
oss
gd
16
12
8
C
iss
C
C
oss
4
rss
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 20. Typical Capacitance Vs.
Fig 21. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig22. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
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9
AUIRF7343Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF7343Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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11
AUIRF7343Q
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
95
AUIRF7343Q
SO-8
Tube
AUIRF7343Q
Tape and Reel
AUIRF7343QTR
4000
12
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AUIRF7343Q
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
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and applications using IR components. To minimize the risks with customer products and applications, customers should
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products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
www.irf.com
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相关型号：
AUIRF7484QTR
Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
INFINEON
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