AUIRF7313Q [INFINEON]
Advanced Planar Technology Dual N Channel MOSFET; 高级平面技术双N沟道MOSFET
| 型号： | AUIRF7313Q |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology Dual N Channel MOSFET |
| 文件： | 总10页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97751
AUTOMOTIVE GRADE
AUIRF7313Q
HEXFET® Power MOSFET
Features
l AdvancedPlanarTechnology
l Dual N Channel MOSFET
l LowOn-Resistance
l Dynamic dV/dT Rating
l 175°COperatingTemperature
l Fast Switching
V(BR)DSS
DS(on) typ.
max.
30V
1
8
7
D1
D1
S1
2
G1
R
23m
29m
Ω
Ω
3
6
5
S2
D2
D2
4
G2
l Lead-Free,RoHSCompliant
l AutomotiveQualified*
ID
6.9A
Top View
Description
SpecificallydesignedforAutomotiveapplications,thiscellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
SO-8
AUIRF7313Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
30
Units
V
V
Drain-Source Voltage
DS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
6.9
5.8
58
A
PD @TA = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
2.4
W
W/°C
V
0.02
± 20
450
3.6
VGS
EAS
dv/dt
TJ
mJ
V/ns
-55 to + 175
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Junction-to-Drain Lead
Max.
20
Units
°C/W
RθJL
RθJA
Junction-to-Ambient
62.5
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
1/5/12
AUIRF7313Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
30
–––
0.03
23
–––
–––
29
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
–––
–––
1.0
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 6.9A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
32
46
VGS = 4.5V, ID = 5.5A
VGS(th)
gfs
IDSS
Gate Threshold Voltage
–––
–––
–––
–––
–––
–––
3.0
–––
1.0
25
V
S
VDS = VGS, ID = 250μA
VDS = 15V, ID = 3.5A
Forward Transconductance
Drain-to-Source Leakage Current
7.5
–––
–––
–––
–––
VDS = 24V, VGS = 0V
μA
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-100
100
VGS = 20V
nA
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
22
2.6
6.8
3.7
7.3
21
33
ID = 3.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
3.9
VDS = 15V
VGS = 10V
VDD = 15V
ID = 3.5A
nC
ns
pF
10
–––
–––
–––
–––
–––
–––
–––
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8Ω
VGS =10V
VGS = 0V
11
Ciss
Coss
Crss
Input Capacitance
755
310
120
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
Continuous Source Current
–––
–––
3.0
(Body Diode)
showing the
integral reverse
A
G
ISM
Pulsed Source Current
(Body Diode)
–––
–––
58
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
27
1.0
40
65
V
TJ = 25°C, IS = 3.5A, VGS = 0V
TJ = 25°C,IF = 3.5A
di/dt = 100A/μs
ns
nC
Qrr
43
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 76mH, RG = 50Ω, IAS = 3.5A, VGS =10V. Part not recommended for use above this value.
ISD ≤ 3.5A, di/dt ≤ 590A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
ꢀ When mounted on 1 inch square copper board.
R is measured at TJ of approximately 90°C.
θ
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2
AUIRF7313Q
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
Class M1B (+/- 100 V)†††
Machine Model
AEC-Q101-002
Class H1A (+/- 500 V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000 V)†††
AEC-Q101-005
Charged Device Model
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
Ordering Information
Base part number
Package Type
Standard Pack
Form
Complete Part Number
Quantity
95
AUIRF7313Q
SO-8
Tube
AUIRF7313Q
Tape and Reel
4000
AUIRF7313QTR
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3
AUIRF7313Q
100
10
1
100
VGS
15V
10V
≤60μs PULSE WIDTH
Tj = 175°C
VGS
15V
10V
7.0V
6.0V
4.5V
3.5V
3.0V
2.8V
TOP
TOP
7.0V
6.0V
4.5V
3.5V
3.0V
2.8V
10
1
BOTTOM
BOTTOM
2.8V
2.8V
60μs PULSE WIDTH Tj = 25°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.0
I
= 6.9A
D
V
= 10V
GS
1.5
1.0
0.5
T = 175°C
J
T
= 25°C
J
V
= 15V
DS
≤60μs PULSE WIDTH
0.1
1
2
3
4
5
6
7
-60
-20
T
20
60
100
140
180
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
I = 3.5A
D
GS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
= C
V
V
= 24V
= 15V
rss
oss
gd
DS
DS
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 6.0V
C
iss
C
oss
C
rss
10
0
5
10
15
20
25
30
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
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4
AUIRF7313Q
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T
= 175°C
100μs
J
1ms
10ms
1
T
= 25°C
J
DC
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.3
0.5
V
0.7
0.9
1.1
1.3
1.5
0.10
1
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
7
2000
1600
1200
800
400
0
I
D
6
5
4
3
2
1
0
TOP
1.0A
1.6A
BOTTOM 3.5A
25
50
T
75
100
125
150
175
25
50
75
100
125
150
175
, Ambient Temperature (°C)
Starting T , Junction Temperature (°C)
A
J
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10. Maximum Avalanche Energy vs. DrainCurrent
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
0.001
A
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
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5
AUIRF7313Q
70
60
50
40
30
20
10
80
70
I
= 3.5A
D
V
4.5V
GS=
60
50
40
30
20
10
T
= 125°C
= 25°C
J
V
10V
T
GS=
J
0
4
8
12
16
20
0
10
20
30
40
50
60
V
, Gate-to-Source Voltage (V)
GS
I
, Drain Current (A)
D
Fig 13. Typical On-Resistance Vs. Gate
Fig 12. Typical On-Resistance Vs. Drain
Voltage
Current
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6
AUIRF7313Q
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
InductorCurrent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 15b. Unclamped Inductive Waveforms
Fig 15a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+VDD
-
VGS
10%
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
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7
AUIRF7313Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MIN MAX
.0532 .0688
MILLIMET ERS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
0.25 [.010]
A
.1497 .1574
.050 BASIC
4
e
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
F7313Q
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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8
AUIRF7313Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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9
AUIRF7313Q
IMPORTANTNOTICE
Unlessspecificallydesignatedfortheautomotivemarket,InternationalRectifierCorporationanditssubsidiaries(IR)reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provideadequatedesignandoperatingsafeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
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service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
productcouldcreateasituationwherepersonalinjuryordeathmayoccur. ShouldBuyerpurchaseoruseIRproductsforany
suchunintendedorunauthorizedapplication,BuyershallindemnifyandholdInternationalRectifieranditsofficers,employees,
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Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring
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productsaredesignatedbyIRascompliantwithISO/TS16949requirementsandbearapartnumberincludingthedesignation
“AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not
be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
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Tel:(310)252-7105
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