AUIRF7316Q [INFINEON]
Advanced Planar Technology Low On-Resistance; 高级平面技术低导通电阻
| 型号： | AUIRF7316Q |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology Low On-Resistance |
| 文件： | 总10页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96365B
AUIRF7316Q
HEXFET® Power MOSFET
Features
V(BR)DSS
-30V
0.042
1
2
3
4
8
7
l
l
l
l
l
l
l
l
AdvancedPlanarTechnology
S1
G1
D1
D1
LowOn-Resistance
Dual P Channel MOSFET
SurfaceMount
Available in Tape & Reel
150°COperatingTemperature
Automotive [Q101] Qualified
Lead-Free,RoHSCompliant
RDS(on) typ.
Ω
6
5
S2
D2
D2
max.
0.058Ω
G2
ID
-4.9A
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremelyefficientandreliabledeviceforuseinAutomotive
applications and a wide variety of other applications.
SO-8
G
D
S
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Gate
Drain
Source
Absolute Maximum Ratings
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
-30
Units
V
V
Drain-Source Voltage
DS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
-4.9
-3.9
-30
I
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
A
DM
S
-2.5
2.0
Continuous Source Current (Diode Conduction)
Power Dissipation
P
P
V
EAS
IAR
@TA = 25°C
@TA = 70°C
D
D
W
Power Dissipation
1.3
Gate-to-Source Voltage
± 20
140
-2.8
0.20
-5.0
V
mJ
A
GS
Single Pulse Avalanche Energy
Avalanche Current
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
T
T
J
-55 to + 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Max.
Units
RθJA
Junction-to-Ambient
62.5
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/24/11
AUIRF7316Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-30 ––– –––
Conditions
VGS = 0V, ID = -250μA
V(BR)DSS
V
V
/ T
(BR)DSS Δ
Δ
Breakdown Voltage Temp. Coefficient
––– 0.022 ––– V/°C Reference to 25°C, ID = -1mA
J
––– 0.042 0.058
––– 0.076 0.098
-1.0 ––– -3.0
V
V
GS = -10V, ID = -4.9A
GS = -4.5V, ID = -3.6A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
IDSS
Gate Threshold Voltage
V
S
VDS = VGS, ID = -250μA
Forward Transconductance
Drain-to-Source Leakage Current
–––
––– ––– -1.0
––– ––– -25
7.7
–––
VDS = -15V, ID = -4.9A
V
V
V
DS = -24V, VGS = 0V
DS = -24V, VGS = 0V, TJ = 55°C
GS = -20V
μA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
nA
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
23
3.8
5.9
13
13
34
32
34
5.7
8.9
19
20
51
48
ID = -4.9A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VDS = -15V
nC
VGS = -10V, See Fig.10
DD = -15V
V
ID = -1.0A
RG = 6.0Ω
RD = 15Ω
VGS = 0V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 710 –––
––– 380 –––
––– 180 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = -25V
ƒ = 1.0MHz,See Fig.5
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
S
––– ––– -2.5
A
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
ISM
––– –––
-30
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– -0.78 -1.0
V
TJ = 25°C, IS = -1.7A, VGS = 0V
TJ = 25°C,IF = -1.7A
di/dt = 100A/μs
–––
–––
44
42
66
63
ns
nC
Qrr
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 35mH, RG = 25Ω, IAS = -2.8A.
ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
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2
AUIRF7316Q
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
SO-8
MSL1
Class M2(+/- 200V )†††
Machine Model
(per AEC-Q101-002)
Class H1A(+/- 500V )†††
(per AEC-Q101-001)
Human Body Model
ESD
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Charged Device
Model
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
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3
AUIRF7316Q
100
10
1
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
VGS
TOP
TOP
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
10
-3.0V
-3.0V
20μs PULSE WIDTH
TJ = 150°C
20μs PULSE WIDTH
TJ = 25°C
A
A
1
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
100
10
1
TJ = 25°C
T = 150°C
J
T = 150°C
J
T = 25°C
J
VDS = -10V
20μs PULSE WIDTH
V
= 0V
GS
A
6.0A
3.0
3.5
4.0
4.5
5.0
5.5
0.4
0.6
0.8
1.0
1.2
1.4
-VGS , Gate-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
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4
AUIRF7316Q
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.5
1.0
0.5
0.0
-
4.9A
=
I
D
V
= -4.5V
GS
V
= -10V
GS
V
=10V
-
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
T , Junction Temperature ( C)
J
-ID , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
300
250
200
150
100
50
0.16
I
D
TOP
-1.3A
-2.2A
BOTTOM -2.8A
0.12
0.08
0.04
0.00
I
= -4.9A
D
0
A
25
50
75
100
125
150
0
3
6
9
12
15
°
-VGS , Gate -to-Source Voltage (V)
Starting T , Junction Temperature ( C)
J
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
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5
AUIRF7316Q
1400
20
16
12
8
VGS = 0V
f = 1 MHz
I
D
= -4.9A
Ciss = Cgs + Cgd + Cds
Crss = Cgd
SHORTED
V
=-15V
DS
1200
1000
800
600
400
200
0
Coss = Cds + Cgd
C
iss
C
oss
C
rss
4
0
A
0
10
20
30
40
1
10
100
Q
, Total Gate Charge (nC)
-
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
P
2
DM
1
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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6
AUIRF7316Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
AUIRF7316Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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8
AUIRF7316Q
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
95
AUIRF7316Q
SO-8
Tube
AUIRF7316Q
Tape and Reel
AUIRF7316QTR
4000
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9
AUIRF7316Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its prod-
ucts and services at any time and to discontinue any product or services without notice. Part numbers designated
with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale
supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
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tion with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier
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and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific
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designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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10
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