AUIRF7319Q [INFINEON]
HEXFET® Power MOSFET; HEXFET®功率MOSFET
| 型号： | AUIRF7319Q |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总13页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96364B
AUTOMOTIVE MOSFET
AUIRF7319Q
HEXFET® Power MOSFET
Features
N-Ch
30V
P-Ch
-30V
N-CHANNEL MOSFET
l
l
l
l
l
l
l
AdvancedPlanarTechnology
1
2
3
4
8
D1
D1
S1
G1
LowOn-Resistance
Dual N and P Channel MOSFET
SurfaceMount
Fully Avalanche Rated
Automotive [Q101] Qualified*
Lead-Free,RoHSCompliant
V(BR)DSS
7
6
5
S2
G2
D2
D2
RDS(on) typ.
0.023 0.042
Ω
Ω
P-CHANNEL MOSFET
max.
0.029 0.058
Ω
Ω
Top View
ID
6.5A
-4.9A
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
AutomotivequalifiedHEXFETPowerMOSFET's area150°C
junction operating temperature, fast switching speed and
improvedrepetitiveavalancherating.Thesebenefitscombine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
SO-8
The efficient SO-8 package provides enhanced thermal
characteristicsanddualMOSFETdiecapabilitymakingitideal
in a variety of power applications. This dual, surface mount
SO-8candramaticallyreduceboardspaceandisalsoavailable
in Tape & Reel.
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Units
Parameter
N-Channel
P-Channel
Drain-Source Voltage
30
6.5
5.2
30
-30
-4.9
-3.9
-30
V
V
DS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
A
DM
S
Continuous Source Current( diode Conduction)
Power Dissipation
2.5
-2.5
2.0
1.3
P
P
@TA = 25°C
@TA = 70°C
D
W
Power Dissipation
D
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
82
140
-2.8
mJ
A
4.0
EAR
0.20
± 20
Repetitive Avalanche Energy
Gate-to-Source Voltage
mJ
V
V
GS
dv/dt
5.0
-5.0
V/ns
Peak Diode Recovery dv/dt
Operating Junction and
T
T
J
-55 to + 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
–––
62.5
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/24/11
AUIRF7319Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
N-Ch
P-Ch
N-Ch
P-Ch
30
–––
–––
–––
–––
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250μA
-30
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
––– 0.022 –––
––– 0.022 –––
––– 0.023 0.029
––– 0.032 0.046
––– 0.042 0.058
––– 0.076 0.098
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V/°C
VGS = 10V, ID = 5.8A
N-Ch
P-Ch
VGS = 4.5V, ID = 4.7A
VGS = -10V, ID = -4.9A
VGS = -4.5V, ID = -3.6A
VDS = VGS, ID = 250μA
VDS = VGS, ID = -250μA
VDS = 15V, ID = 5.8A
RDS(on)
Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
3.0
-3.0
–––
–––
1.0
-1.0
25
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = -15V, ID = -4.9A
VDS = 24V, VGS = 0V
7.7
–––
–––
–––
–––
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
μA
V
DS = -24V, VGS = 0V, TJ = 55°C
GS = ± 20V
-25
V
IGSS
nA
––– ± 100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Conditions
Parameter
Min. Typ. Max. Units
N-Channel
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
22
33
34
3.9
5.7
9.6
8.9
12
19
13
20
39
51
26
48
Qg
Total Gate Charge
ID = 5.8A VDS = 15V, VGS =10V
23
nC
2.6
3.8
6.4
5.9
8.1
13
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
P-Channel
ID = -4.9A VDS = -15V, VGS =-10V
N-Channel
VDD = 15V, ID=1.0A, RG = 6.0Ω
RD = 15Ω
P-Channel
8.9
13
ns
Ω
VDD = -15V, ID=-1.0A, RG = 6.0
26
td(off)
tf
Turn-Off Delay Time
Fall Time
Ω
RD = 15
34
17
32
N-Channel
VGS = 0V, VDS = 25V, f =1.0Mhz
650
710
–––
–––
Ciss
Coss
Crss
Input Capacitance
320
–––
Output Capacitance
Reverse Transfer Capacitance
pF
P-Channel
VGS = 0V, VDS = -25V, f =1.0Mhz
380
130
–––
–––
180
–––
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
Continuous Source Current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.78
-0.78
45
2.5
-2.5
30
I
I
S
(Body Diode)
A
Pulsed Source Current
(Body Diode)
SM
-30
1.0
-1.0
68
T = 25°C, I = 1.7A, V = 0V
J
S
GS
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
T = 25°C, I = -1.7A, V = 0V
J
S
GS
N-Channel
t
ns
nC
rr
T = 25°C, I = 1.7A di/dt = 100A/μs
44
66
J
F
P-Channel
58
87
Q
rr
T = 25°C, I = -1.7A di/dt = 100A/μs
42
63
J
F
Notes through ꢀ are on page 11
2
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AUIRF7319Q
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
SO-8
MSL1
Class M2(+/- 200V )†††
Machine Model
(per AEC-Q101-002)
Class H1A(+/- 500V )†††
(per AEC-Q101-001)
Human Body Model
ESD
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Charged Device
Model
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
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3
N-Channel
AUIRF7319Q
100
100
10
1
VGS
VGS
15V
TOP
15V
10V
TOP
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
10
3.0V
3.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
100
T = 25°C
J
TJ = 150°C
T = 150°C
J
10
T = 25°C
J
VDS = 10V
20μs PULSE WIDTH
5.0A
V
= 0V
GS
A
1
3.0
3.5
4.0
4.5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS , Gate-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
4
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N-Channel
AUIRF7319Q
2.0
1.5
1.0
0.5
0.0
0.040
0.036
0.032
0.028
0.024
0.020
5.8A
=
I
D
V
= 4.5V
GS
V
= 10V
GS
V
= 10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
T , Junction Temperature ( C)
J
I
, Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
0.12
0.10
0.08
0.06
0.04
0.02
0.00
200
ID
D
TOP
1.8A
3.2A
BOTTOM 4.0A
160
120
80
40
0
I
= 5.8A
D
A
A
150
0
3
6
9
12
15
25
50
75
100
125
Starting T , Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 8. Maximum Avalanche Energy
Fig 7. Typical On-Resistance Vs. Gate
Vs. Drain Current
Voltage
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5
N-Channel
AUIRF7319Q
1200
20
16
12
8
V
= 0V,
f = 1MHz
I
D
= 5.8A
GS
C
C
C
= C + C
,
C
SHORTED
iss
rss
oss
gs
gd
gd
ds
V
= 15V
DS
= C
= C + C
ds
gd
900
600
300
0
C
iss
C
oss
C
rss
4
0
A
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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P-Channel
AUIRF7319Q
100
100
10
1
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
TOP
TOP
BOTTOM - 3.0V
BOTTOM - 3.0V
10
-3.0V
-3.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
TJ = 25°C
TJ = 150°C
A
A
10
1
0.1
1
10
0.1
1
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
100
10
1
100
TJ = 25°C
T = 150°C
J
T = 150°C
J
10
T = 25°C
J
VDS = -10V
20μs PULSE WIDTH
V
= 0V
GS
A
1
6.0A
0.4
0.6
0.8
1.0
1.2
1.4
3.0
3.5
4.0
4.5
5.0
5.5
-V , Source-to-Drain Voltage (V)
-VGS , Gate-to-Source Voltage (V)
SD
Fig 15. Typical Source-Drain Diode
Fig 14. Typical Transfer Characteristics
ForwardVoltage
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7
P-Channel
AUIRF7319Q
2.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-
4.9A
=
I
D
1.5
1.0
0.5
0.0
V
= -4.5V
GS
V
= -10V
GS
-
=10V
V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
A
0
10
30
-ID , Drain Curre2n0t (A)
T , Junction Temperature ( C)
J
Fig 17. Typical On-Resistance Vs. Drain
Fig 16. Normalized On-Resistance
Current
Vs.Temperature
0.16
0.12
0.08
0.04
0.00
300
I
D
TOP
-1.3A
-2.2A
BOTTOM -2.8A
250
200
150
100
50
I
= -4.9A
D
0
A
25
50
75
100
125
150
0
3
6
9
12
15
°
Starting T , Junction Temperature ( C)
-VGS , Gate -to-Source Voltage (V)
J
Fig 19. Maximum Avalanche Energy
Fig 18. Typical On-Resistance Vs. Gate
Vs. Drain Current
Voltage
8
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P-Channel
AUIRF7319Q
20
16
12
8
1400
1200
1000
800
600
400
200
0
I
D
= -4.9A
VGS = 0V
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
SHORTED
V
=-15V
DS
Coss = Cds + Cgd
C
iss
C
oss
C
rss
4
0
A
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
-
DS
Fig 20. Typical Capacitance Vs.
Fig 21. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig22. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
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9
AUIRF7319Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF7319Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 22 )
N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
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11
AUIRF7319Q
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
95
AUIRF7319Q
SO-8
Tube
AUIRF7319Q
Tape and Reel
AUIRF7319QTR
4000
12
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AUIRF7319Q
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
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regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
productsaredesignatedbyIRascompliantwithISO/TS16949requirementsandbearapartnumberincludingthedesignation
“AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not
be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
www.irf.com
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