AUIRF7309QTR [INFINEON]
Advanced Planar Technology Low On-Resistance; 高级平面技术低导通电阻
| 型号： | AUIRF7309QTR |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology Low On-Resistance |
| 文件： | 总14页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97655A
AUTOMOTIVE GRADE
AUIRF7309Q
Features
l AdvancedPlanarTechnology
l LowOn-Resistance
l Dual N and P Channel MOSFET
l Dynamic dV/dT Rating
l 150°COperatingTemperature
l Fast Switching
l Lead-Free,RoHSCompliant
l AutomotiveQualified*
HEXFET® Power MOSFET
N-CHANNEL MOSFET
N-CH P-CH
1
8
D1
D1
S1
2
7
G1
V(BR)DSS
RDS(on) max.
ID
30V
0.05
-30V
0.10
3
4
6
5
S2
D2
D2
Ω
Ω
G2
P-CHANNEL MOSFET
4.7A -3.5A
Top View
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
SO-8
AUIRF7309Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
Units
N-Channel
P-Channel
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
4.7
-3.5
I @ TA = 25°C
D
4
-3.0
-2.4
-12
I @ TA = 25°C
D
A
3.2
16
I @ TA = 70°C
D
I
DM
1.4
W
W/°C
V
P @TA = 25°C
Power Dissipation
D
0.011
± 20
Linear Derating Factor
Gate-to-Source Voltage
V
GS
dv/dt
6.9
-6.0
V/ns
Peak Diode Recovery dv/dt
Operating Junction and
T
T
J
-55 to + 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient (PCB Mount, steady state)
90
°C/W
–––
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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AUIRF7309Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
30
-30
–––
–––
–––
–––
–––
–––
1.0
Typ.
–––
–––
0.032
-0.037
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
–––
–––
–––
–––
0.050
0.080
0.10
0.16
3.0
-3.0
–––
–––
1.0
-1.0
25
Units
V
Conditions
VGS = 0V, ID = 250μA
VGS = 0V, ID =-250μA
N-Ch
P-Ch
N-Ch
P-Ch
V(BR)DSS
Drain-to-Source Breakdown Voltage
V/°C Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 2.4A
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
N-Ch
P-Ch
VGS = 4.5V, ID = 2.0A
Ω
RDS(on)
VGS = -10V, ID = 1.8A
VGS = -4.5V, ID = 1.5A
V
S
V
V
DS = VGS, ID = 250μA
DS = VGS, ID = -250μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
VGS(th)
gfs
Gate Threshold Voltage
-1.0
5.2
2.5
VDS = 15V, ID = 2.4A
VDS = -24V, ID = -1.8A
Forward Transconductance
–––
–––
–––
–––
–––
–––
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = 20V
μA
IDSS
Drain-to-Source Leakage Current
-25
-100
100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
N-P
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
–––
–––
–––
–––
25
25
N-Channel
ID = 2.6A, VDS = 16V, VGS = 4.5V
Qg
Total Gate Charge
nC
–––
–––
–––
–––
–––
–––
2.9
2.9
7.9
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
P-Channel
ID =-2.2A, VDS =-16V, VGS =-4.5V
–––
–––
–––
–––
–––
6.8
11
9.0
–––
–––
–––
N-Channel
VDD= 10V, ID = 2.6A RG = 6.0Ω
RD = 3.8Ω
21
ns
–––
–––
–––
–––
17
22
25
7.7
–––
–––
–––
–––
P-Channel
VDD=-10V, ID =-2.2A RG = 6.0Ω
td(off)
Turn-Off Delay Time
RD = 4.5Ω
tf
Fall Time
–––
–––
18
4.0
–––
–––
LD
Internal Drain Inductance
Between lead,
nH
pF
6mm (0.25in.)
from package
LS
Internal Source Inductance
N-P
–––
6.0
–––
and center of die contact
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
520
440
–––
–––
Ciss
Coss
Crss
Input Capacitance
–––
–––
–––
180
200
72
–––
–––
–––
Output Capacitance
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
93
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
1.8
Continuous Source Current
(Body Diode)
IS
–––
–––
–––
–––
–––
–––
-1.8
16
A
Pulsed Source Current
Diode)
(Body
ISM
-12
–––
–––
–––
–––
1.0
-1.0
V
TJ = 25°C, IS = 1.8A, VGS = 0V
TJ = 25°C, IS = -1.8A, VGS = 0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
47
53
71
80
ns
nC
N-Channel
TJ = 25°C,IF =2.6A, di/dt = 100A/μs
–––
–––
56
66
84
99
P-Channel
TJ = 25°C,IF =-2.2A, di/dt = 100A/μs
Qrr
Reverse Recovery Charge
Forward Turn-On Time
t
N-P Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
2
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AUIRF7309Q
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
N-CH: Class M2 (+/- 150V)†††
Machine Model
P-CH: Class M2 (+/- 150V)†††
AEC-Q101-002
N-CH: Class H1A (+/- 500V)†††
Human Body Model
P-CH: Class H0 (+/- 250V)†††
ESD
AEC-Q101-001
N-CH: Class C5 (+/- 2000V)†††
P-CH: Class C5 (+/- 2000V)†††
Charged Device
Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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AUIRF7309Q
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 24. For N and P Channel HEXFETS
10
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AUIRF7309Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
F7309Q
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7309Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
12
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AUIRF7309Q
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Quantity
95
AUIRF7309Q
SO-8
AUIRF7309Q
Tape and Reel
4000
AUIRF7309QTR
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AUIRF7309Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the
right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
and / or customer specific requirements with regards to product discontinuance and process change notification. All products are
sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty.
Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide
adequate design and operating safeguards.
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failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
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Tel: (310) 252-7105
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