AUIRF7303QTR [INFINEON]
Advanced Planar Technology Dual N Channel MOSFET; 高级平面技术双N沟道MOSFET
| 型号： | AUIRF7303QTR |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology Dual N Channel MOSFET |
| 文件： | 总10页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97654C
AUTOMOTIVE GRADE
AUIRF7303Q
HEXFET® Power MOSFET
Features
l AdvancedPlanarTechnology
l Dual N Channel MOSFET
l LowOn-Resistance
l Dynamic dV/dT Rating
l 175°COperatingTemperature
l Fast Switching
1
8
7
V(BR)DSS
30V
D1
D1
S1
2
G1
3
6
5
S2
D2
D2
RDS(on) max.
ID
0.05
Ω
4
G2
l Lead-Free,RoHSCompliant
l AutomotiveQualified*
5.3A
Top View
Description
SpecificallydesignedforAutomotiveapplications,thiscellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
SO-8
AUIRF7303Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
5.3
4.4
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
A
44
PD @TA = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
2.4
W
W/°C
V
0.02
± 20
414
1160
1.6
VGS
EAS
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
°C
EAS(Tested)
dv/dt
TJ
-55 to + 175
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Max.
Units
Rθ
Junction-to-Ambient
62.5
°C/W
JA
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
08/24/11
AUIRF7303Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
30
–––
0.03
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.05
0.08
3.0
V
V
/ T
(BR)DSS Δ
Δ
Breakdown Voltage Temp. Coefficient
–––
–––
–––
1.0
V/°C Reference to 25°C, ID = 1mA
J
VGS = 10V, ID = 2.7A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
GS = 4.5V, ID = 2.1A
VGS(th)
Gate Threshold Voltage
V
S
VDS = VGS, ID = 100μA
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
5.6
–––
1.0
25
VDS = 15V, ID = 2.7A
–––
–––
–––
–––
V
DS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
μA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-100
100
nA
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min. Typ. Max. Units
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
1.5
4.4
2.9
6.2
15
21
ID = 2.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.3
VDS = 15V
nC
6.6
V
V
GS = 10V
DD = 15V
–––
–––
–––
–––
–––
–––
–––
ID = 2.7A
R = 6.8
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Ω
G
7.8
515
217
90
VGS =10V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V
ƒ = 1.0MHz
pF
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
D
S
–––
–––
3.0
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
–––
–––
44
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
26
1.0
39
75
V
TJ = 25°C, IS = 2.7A, VGS = 0V
TJ = 25°C,IF = 2.7A
di/dt = 100A/μs
ns
nC
Qrr
50
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 118mH, RG = 50Ω, IAS = 2.7A, VGS =10V. Part not recommended for use above this value.
ISD ≤ 2.7A, di/dt ≤ 389A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
ꢀ This value determined from sample failure population, starting TJ = 25°C, L = 118mH, RG = 50Ω, IAS = 2.7A, VGS =10V.
Surface mounted on FR-4 board, t ≤ 10sec..
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2
AUIRF7303Q
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
Class M2 (+/- 150V)†††
Machine Model
AEC-Q101-002
Class H1A (+/- 500V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 1500V)†††
AEC-Q101-005
Charged Device Model
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
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3
AUIRF7303Q
100
10
1
100
VGS
15V
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
TOP
TOP
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
10
1
BOTTOM
BOTTOM
2.5V
2.5V
0.1
60μs PULSE WIDTH
Tj = 175°C
≤
≤
60μs PULSE WIDTH Tj = 25°C
0.1
0.01
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.0
I
= 5.3A
D
V
= 15V
DS
V
= 10V
GS
≤
60μs PULSE WIDTH
1.5
1.0
0.5
T = 175°C
J
T
= 25°C
J
0.1
1
2
3
4
5
6
7
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
1000
100
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 2.7A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
V
V
= 24V
= 15V
DS
DS
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 6.0V
C
iss
C
oss
C
rss
10
1
10
100
1000
0
5
10
15
20
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
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4
AUIRF7303Q
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
T
= 175°C
J
1ms
10ms
1
T
= 25°C
J
DC
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
V
GS
= 0V
0.1
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
, Source-to-Drain Voltage (V)
0.10
1
10
100
V
SD
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
6
1800
1600
1400
1200
1000
800
I
D
5
4
3
2
1
0
TOP
0.9A
1.4A
BOTTOM 2.7A
600
400
200
0
25
50
T
75
100
125
150
175
25
50
75
100
125
150
175
, Ambient Temperature (°C)
Starting T , Junction Temperature (°C)
A
J
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10. Maximum Avalanche Energy vs. DrainCurrent
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
0.01
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
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5
AUIRF7303Q
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
InductorCurrent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 12. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 13b. Unclamped Inductive Waveforms
Fig 13a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+VDD
-
VGS
10%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
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6
AUIRF7303Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MIN MAX
.0532 .0688
MILLIMETERS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
4
6
H
E
0.25 [.010]
A
.1497 .1574
.050 BASIC
e
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
AUIRF7303Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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8
AUIRF7303Q
Ordering Information
Base part number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Quantity
95
AUIRF7303Q
SO-8
AUIRF7303Q
Tape and Reel
4000
AUIRF7303QTR
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9
AUIRF7303Q
IMPORTANTNOTICE
Unlessspecificallydesignatedfortheautomotivemarket,InternationalRectifierCorporationanditssubsidiaries(IR)reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
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