AUIRF7103QTR [INFINEON]
Advanced Planar Technology Dual N Channel MOSFET; 高级平面技术双N沟道MOSFET
| 型号： | AUIRF7103QTR |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology Dual N Channel MOSFET |
| 文件： | 总13页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
AUIRF7103Q
HEXFET® Power MOSFET
Features
l AdvancedPlanarTechnology
l Dual N Channel MOSFET
l LowOn-Resistance
l Dynamic dV/dT Rating
l 175°COperatingTemperature
l Fast Switching
1
2
3
4
8
7
S1
G1
S2
D1
D1
D2
D2
V(BR)DSS
DS(on) max.
ID
50V
130m
3.0A
6
5
R
G2
l Lead-Free,RoHSCompliant
l AutomotiveQualified*
Top View
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
SO-8
AUIRF7103Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 4.5V
Max.
3.0
Units
A
I
I
I
@ TA = 25°C
@ TA = 70°C
D
D
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
2.5
25
DM
Power Dissipation
P
@TA = 25°C
2.4
W
D
Linear Derating Factor
Gate-to-Source Voltage
16
± 20
W/°C
V
VGS
EAS
IAR
Single Pulse Avalanche Energy (Thermally Limited)
22
mJ
A
Avalanche Current
See Fig. 16c, 16d, 19, 20
Repetitive Avalanche Energy
EAR
mJ
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and
12
V/ns
°C
T
-55 to + 175
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
RJL
RJA
–––
62.5
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
December 5, 2012
AUIRF7103Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
50 ––– –––
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 130
––– ––– 200
V
V
GS = 10V, ID = 3.0A
GS = 4.5V, ID = 1.5A
RDS(on)
Static Drain-to-Source On-Resistance
m
VGS(th)
gfs
IDSS
Gate Threshold Voltage
1.0
3.4
–––
3.0
V
S
VDS = VGS, ID = 250μA
VDS = 15V, ID = 3.0A
VDS = 40V, VGS = 0V
Forward Transconductance
Drain-to-Source Leakage Current
––– –––
––– –––
––– –––
2.0
25
μA
V
V
V
DS = 40V, VGS = 0V, TJ = 55°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100
––– ––– 100
nA
GS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
10
1.2
2.8
5.1
1.7
15
15
ID = 2.0A
DS = 40V
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
V
nC
ns
pF
VGS = 10V
VDD = 25V
ID = 1.0A
td(off)
tf
RG = 6.0
RD = 25
VGS = 0V
Turn-Off Delay Time
Fall Time
2.3
Ciss
Coss
Crss
Input Capacitance
––– 255 –––
Output Capacitance
Reverse Transfer Capacitance
–––
–––
69
29
–––
–––
V
DS = 25V
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
––– –––
3.0
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
––– –––
––– –––
12
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.2
53
67
V
TJ = 25°C, IS = 1.5A, VGS = 0V
TJ = 25°C,IF = 1.5A
–––
–––
35
45
ns
nC
di/dt = 100A/μs
Qrr
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400μs; duty cycle 2%.
Surface mounted on 1 in square Cu board.
Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Figure 12).
ꢀ ISD 2.0A, di/dt 155A/μs, VDD V(BR)DSS, TJ 175°C.
Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance.
2
www.irf.com
December 5, 2012
AUIRF7103Q
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
SO-8
MSL1
Class M1A (+/- 50V)†††
Machine Model
AEC-Q101-002
Class H0 (+/- 250V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 1125V)†††
AEC-Q101-005
Charged Device
Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
December 5, 2012
AUIRF7103Q
100
10
1
100
VGS
VGS
15V
10V
TOP
15V
10V
TOP
8.0V
8.0V
7.0V
6.0V
5.5V
5.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
10
20μs PULSE WIDTH
20μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
10.00
1.00
2.5
3.0A
=
I
D
T
= 175°C
J
2.0
1.5
1.0
0.5
0.0
T
V
= 25°C
J
= 25V
DS
20μs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
3.0
6.0
9.0
12.0
15.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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December 5, 2012
AUIRF7103Q
12
9
10000
1000
100
I
=
2.0A
D
V
C
= 0V,
f = 1 MHZ
GS
V
V
V
=
=
=
40V
25V
10V
DS
DS
DS
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
6
Ciss
Coss
Crss
3
10
0
1
10
100
0
3
6
9
12
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
10
100
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 175 C
J
10
1
1
100μsec
°
T = 25 C
J
1msec
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
100
V
= 0 V
GS
0.1
0.4
0.6
0.8
1.0
1.2
0
1
10
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
December 5, 2012
AUIRF7103Q
RD
VDS
3.0
2.4
1.8
1.2
0.6
0.0
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width µs
Duty Factor
Fig 10a. Switching Time Test Circuit
V
DS
25
50
75
100
125
150
175
90%
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
10
1
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
6
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December 5, 2012
AUIRF7103Q
0.15
0.14
0.13
0.12
0.11
0.10
0.09
2.500
2.000
1.500
1.000
0.500
0.000
V
= 4.5V
GS
I
= 3.0A
D
V
= 10V
GS
4.5
6.0
-V
7.5
9.0
10.5
12.0
13.5
15.0
0
5
10 15 20 25 30 35 40
, Drain Current (A)
Gate -to -Source Voltage (V)
GS,
I
D
Fig 13. Typical On-Resistance Vs. Drain
Fig 12. Typical On-Resistance Vs. Gate
Current
Voltage
2.0
1.8
70
60
50
40
30
20
10
0
I
= 250μA
D
1.5
1.3
1.0
-75 -50 -25
0
25
50
75 100 125 150
1.00
10.00
100.00
Time (sec)
1000.00
T , Temperature ( °C )
J
Fig 15. Typical Power Vs. Time
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
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7
December 5, 2012
AUIRF7103Q
60
48
36
24
12
0
I
D
TOP
1.2A
2.5A
BOTTOM 3.0A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
Fig 16c. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 16a. Maximum Avalanche Energy
V
(BR)DSS
Vs. Drain Current
t
p
I
AS
Fig 16d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50K
VGS
.2F
12V
.3F
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 18. Basic Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
8
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December 5, 2012
AUIRF7103Q
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
avalanche losses
0.01
1
0.05
0.10
0.1
0.01
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 19. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
25
20
15
10
5
TOP
BOTTOM 10% Duty Cycle
= 3.0A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 20. Maximum Avalanche Energy
Vs. Temperature
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9
December 5, 2012
AUIRF7103Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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December 5, 2012
AUIRF7103Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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11
December 5, 2012
AUIRF7103Q
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Quantity
95
AUIRF7103Q
SO-8
AUIRF7103Q
Tape and Reel
4000
AUIRF7103QTR
12
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December 5, 2012
AUIRF7103Q
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
withIR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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13
December 5, 2012
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