HSBD238 [HUASHAN]
PNP SILICON TRANSISTOR; PNP硅晶体管型号: | HSBD238 |
厂家: | SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
描述: | PNP SILICON TRANSISTOR |
文件: | 总2页 (文件大小:60K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PNP SILICON TRANSIST OR
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD238
█ APPLI CATI ONS
Medium Power Linear switching Applications
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature
- 55~150℃
150℃
25W
Tj——Junction Temperature
PC——Collector Dissipation(Tc=25℃)
1―Emitter, E
2―Collector,C
3―Base,B
VCBO——Collector-Base Voltage
VCEO——Collector-Emitter Voltage
VCER——Collector-Emitter Voltage
VEBO——Emitter-Base Voltage
100V
-80V
-100V
-5V
IC——Collector Curren(t Pulse)
IC——Collector Current(DC)
-6A
-2A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
ICBO
Characteristics
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
- 100
μA
VCB=-100V, IE=0
VEB=-5V, IC=0
- 1
mA
IEBO
hFE(1)
Emitter-Base Cut-off Current
DC Current Gain
40
25
VCE=-2V, IC=-150mA
*hFE(2)
*VCE(sat)
*VBE(ON)
VCEO(SUS)
fT
VCE=-2V, IC=-1A
- 0. 6
- 1. 3
V
V
I c=- 1A, I B=- 0. 1A
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I c=- 1A, VCE=-2V
I c=- 100mA, I B=0
- 80
3
Collector-Emitter Sustaining Voltage
Current Gain-Bandwidth Product
MHz
I c=- 250mA, VCE=-10V
* Pul se Test : PW=350μS, Dut y Cycl e≤1. 5% Pul sed
PNP SILICON TRANSIST OR
Shantou Huashan Electronic Devices Co.,Ltd.
HSBD238
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