AO6401 [FREESCALE]
P-Channel 20-V (D-S) MOSFET High power and current handling capability; P通道20 -V （ DS ） MOSFET的高功率和电流处理能力
| 型号： | AO6401 |
| 厂家： | 
Freescale |
| 描述： | P-Channel 20-V (D-S) MOSFET High power and current handling capability |
| 文件： | 总3页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO6401/MC6401
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
-4.9
56 @ VGS = -4.5V
80 @ VGS = -2.5V
-26.5
-4.2
•
•
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
1
2
3
6
5
4
Miniature TSOP-6 Surface Mount Package
Saves Board Space
High power and current handling capability
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-26.5
±12
V
TA=25oC
TA=70oC
-4.9
-4.0
±20
-1.7
2.0
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
IDM
IS
A
TA=25oC
TA=70oC
PD
W
1.3
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Units
oC/W
oC/W
Maximum
62.5
Maximum Junction-to-Ambienta
t <= 5 sec
RθJA
110
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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Freescale
AO6401/MC6401
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
VDS = 0 V, VGS = ±12 V
-0.7
±100 nA
VDS = -21 V, VGS = 0 V
VDS = -21 V, VGS = 0 V, TJ = 55oC
-1
IDSS
Zero Gate Voltage Drain Current
uA
-5
On-State Drain CurrentA
ID(on)
VDS = -4.5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -4.9 A
VGS = -2.5 V, ID = -4.2 A
-15
A
56
80
Drain-Source On-ResistanceA
rDS(on)
mΩ
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = -10 V, ID = -4.9 A
IS = 1.7 A, VGS = 0 V
11
S
VSD
-0.8
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
25
2.4
3.9
22
35
45
25
V
DS = -10 V, VGS = -4.5 V,
nC
nS
ID = -4.9 A
VDD = -10 V, RL = 6 Ω , ID = -1 A,
VGEN = -4.5 V
Turn-Off Delay Time
Fall-Time
td(off)
tf
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
rther notice to any products herein. RF EESCALE makes no
FREESCALE reserves the right to make changes without fu
warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
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intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
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claim alleges that freescale was negligent regarding the
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Freescale
AO6401/MC6401
Package Information
TSOP-6: 6LEAD
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