AO6403 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO6403 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO6403
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6403 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. It may be used in
common-drain configuration to form a bidirectional
blocking switch. AO6403 is Pb-free (meets ROHS &
Sony 259 specifications). AO6403L is a Green
Product ordering option. AO6403 and AO6403L are
electrically identical.
VDS (V) = -30V
ID = -6 A (VGS = -10V)
R
DS(ON) < 35mΩ (VGS = -10V)
DS(ON) < 58mΩ (VGS = -4.5V)
R
D
TSOP6
Top View
1
2
3
6
5
4
D
D
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
V
A
TA=25°C
TA=70°C
-6
ID
-5
-30
Pulsed Drain Current B
IDM
TA=25°C
TA=70°C
2
PD
W
Power Dissipation A
1.44
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
47.5
74
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
RθJL
37
Alpha & Omega Semiconductor, Ltd.
AO6403
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
V
DS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6A
±100
-2.4
nA
V
VGS(th)
ID(ON)
-1.2
30
-2
A
28
37
35
45
58
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
S
VGS=-4.5V, ID=-5A
44
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
DS=-5V, ID=-6A
13
IS=-1A,VGS=0V
-0.76
-1
V
Maximum Body-Diode Continuous Current
-4.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
920
190
122
3.6
pF
pF
pF
Ω
V
V
GS=0V, VDS=-15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
18.5
9.6
2.7
4.5
7.7
5.7
20.2
9.5
20
nC
nC
nC
nC
ns
VGS=-10V, VDS=-15V, ID=-6A
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
VGS=-10V, VDS=-15V, RL=2.7Ω,
RGEN=3Ω
Turn-On Rise Time
ns
Turn-Off DelayTime
ns
Turn-Off Fall Time
ns
trr
IF=-6A, dI/dt=100A/µs
IF=-6A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
8.8
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 2 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
-4.5V
-10V
-6V
-5V
VDS=-5V
-4V
-3.5V
125°C
VGS=-3V
3
25°C
3.5
0
0
0
1
2
4
5
0
0.5
1
1.5
2
2.5
3
4
4.5
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
60
1.60
1.40
1.20
1.00
0.80
ID=-6A
55
50
45
40
35
30
25
20
15
10
VGS=-4.5V
VGS=-10V
VGS=-4.5V
VGS=-10V
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
70
60
50
40
30
20
10
0
ID=-6A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
8
VDS=-15V
ID=-6A
1250
1000
750
500
250
0
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
16
20
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C, TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
100µs
RDS(ON)
limited
1ms
0.1s
10ms
1s
10s
1
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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